Provided is a technique configured to cause a first actual operation to be started in a short time when the actual operation of a substrate processing component group is performed a plurality of times. A substrate processing system 10 includes a substrate processing apparatus 11 having a substrate processing component group 20 and a controller 40. The substrate processing component group 20 is configured to perform a test operation and an actual operation. The substrate processing component group 20 has a first substrate processing component and a second substrate processing component. When the actual operation is performed a plurality of times, the controller 40 causes the first substrate processing component to perform the test operation and causes the actual operation of the first substrate processing component to be started after completion of the test operation of the first substrate processing component.

According to one embodiment, there is provided a method for manufacturing a semiconductor device. The method includes metal electroplating on a surface of a first electrode formed on a first surface of a semiconductor substrate with a plating solution which contains aggregates of a supercritical fluid and a solution of a plating metal ion and an electrolyte. The first surface includes a recess. The surface is along with a shape of the recess. The recess has a first dimension and a second dimension, and assuming that an aspect ratio of the recess is given as a ratio of the second dimension to the first dimension, a median of a particle size distribution of the aggregates is greater than the first dimension.

According to one embodiment, there is provided a method for manufacturing a semiconductor device. The method includes metal electroplating on a surface of a first electrode formed on a first surface of a semiconductor substrate with a plating solution which contains aggregates of a supercritical fluid and a solution of a plating metal ion and an electrolyte. The first surface includes a recess. The surface is along with a shape of the recess. The recess has a first dimension and a second dimension, and assuming that an aspect ratio of the recess is given as a ratio of the second dimension to the first dimension, a median of a particle size distribution of the aggregates is greater than the first dimension.

A manufacturing method of a metal grid includes: providing a base substrate; forming a pattern including a first dielectric layer on the base substrate through a patterning process such that the first dielectric layer has a first groove in a lattice shape; forming a second dielectric layer on a side of the first dielectric layer away from the base substrate such that the second dielectric layer is deposited at least on a sidewall of the first groove to form a second groove in a lattice shape; and forming a metal material in the second groove, and removing at least a part of a material of the second dielectric layer such that an orthographic projection of the part of the material of the second dielectric layer on the base substrate does not overlap with an orthographic projection of the metal material on the base substrate, to form a metal grid.

A method for manufacturing a printed wiring board includes forming an electroless plating layer on a solder resist layer such that the electroless plating layer has a film thickness in the range of 0.05 μm to 0.70 μm, forming plating resist such that the plating resist has openings exposing portions of the electroless plating layer, applying electrolytic plating such that metal posts are formed in the openings of the plating resist, removing the plating resist, and etching the electroless plating layer exposed from the metal posts. The solder resist layer is formed such that the solder resist layer has openings exposing portions of the outermost conductor layer, the electroless plating layer is formed on the portions of the outermost conductor layer, and the plating resist is formed such that the openings of the plating resist expose the portions of the electroless plating layer formed in the openings of the solder resist layer.

The present application provides a method for improving a pit defect formed after a copper electroplating process, comprising: forming a dielectric layer on a wafer; etching the dielectric layer to form a trench; forming a seed barrier layer on the surface of the trench; pre-cleaning the wafer to increase the wetness of the trench on the wafer; filling the trench with copper by means of electroplating; polishing the upper surface of the trench to planarize the upper surface of the trench. The wetness of the wafer surface can be increased by pre-cleaning a via. An excessively dry wafer surface leads to a poor wetness effect when the wafer enters water, a bubble is difficult to be discharged, a void is easy to be generated in electroplating. By the pre-cleaning step, the problem of a poor wetness effect occurring when the wafer enters water can be effectively improved.

The present application provides a method for improving a pit defect formed after a copper electroplating process, comprising: forming a dielectric layer on a wafer; etching the dielectric layer to form a trench; forming a seed barrier layer on the surface of the trench; pre-cleaning the wafer to increase the wetness of the trench on the wafer; filling the trench with copper by means of electroplating; polishing the upper surface of the trench to planarize the upper surface of the trench. The wetness of the wafer surface can be increased by pre-cleaning a via. An excessively dry wafer surface leads to a poor wetness effect when the wafer enters water, a bubble is difficult to be discharged, a void is easy to be generated in electroplating. By the pre-cleaning step, the problem of a poor wetness effect occurring when the wafer enters water can be effectively improved.

Provided is a metal material including a substrate and an Ag—Sn covering layer that covers a surface of the substrate, in which the Ag—Sn covering layer contains Ag and Sn and has an Ag—Sn alloy exposed on a surface thereof, and an average crystal grain size in a cross section in parallel with a surface of the Ag—Sn covering layer is less than 0.28 μm. Provided is also a metal material, produced by forming a metal layer including Ag and Sn, on a surface of a substrate, and heating the resultant at a temperature equal to or more than the melting point of Sn, and including an Ag—Sn covering layer containing Ag and Sn and having an Ag—Sn alloy exposed on a surface thereof, on the surface of the substrate.

Electroplating apparatus and electroplating method using the same. Provided is an electroplating apparatus. The electroplating apparatus includes a plating bath and a stage configured to support a substrate loaded into the plating bath to be disposed in a horizontal direction. The electroplating apparatus further includes a plurality of cathodes disposed on both sides of the substrate and an anode configured to be movable above the substrate. The electroplating apparatus also includes a plurality of spray nozzles disposed on at least one side of the anode and configured to spray a plating solution. The electroplating apparatus further includes a shield which is disposed on both sides of the anode and whose one end is more adjacent to the substrate than the anode.

An apparatus for electroplating includes a cup configured to support a substrate, and a cone including at least three distance measuring devices arranged on a lower surface thereof and facing the substrate. Each distance measuring device is configured to transmit a laser pulse towards the substrate, the laser pulse impinging the substrate, receive a reflected laser pulse from the substrate, calculate a turnaround time of the laser pulse, and calculate a distance between the distance measuring device and the substrate using the turnaround time for determining an inclination of the substrate.