The invention relates to a method for depositing a metal M1 onto a carbon layer, as well as to a method for manufacturing an electrode for fuel cells and to a method for manufacturing a fuel cell. The method for depositing a metal M1 onto a porous carbon layer according to the invention includes a step of depositing said metal M1 by means of the electrochemical reduction of an electrolytic solution of a salt of the metal M1, and, prior to said step of depositing the metal M1 by means of electrochemical reduction, a step of depositing a metal M2 by means of chemical reduction using a reducing gas of a salt of the metal M2, the thermodynamic equilibrium potential between the ionic form of the salt of M2 and M2, E.sup.eq.sub.ionic form of the salt of M2/M2 being greater than the thermodynamic equilibrium potential between the ionic form of the salt of M1 and M1, E.sup.eq.sub.ionic form of the salt of M1/M1. The invention can be used, in particular, in the field of fuel cells.

Disclosed are pre-wetting apparatus designs and methods. In some embodiments, a pre-wetting apparatus includes a degasser, a process chamber, and a controller. The process chamber includes a wafer holder configured to hold a wafer substrate, a vacuum port configured to allow formation of a subatmospheric pressure in the process chamber, and a fluid inlet coupled to the degasser and configured to deliver a degassed pre-wetting fluid onto the wafer substrate at a velocity of at least about 7 meters per second whereby particles on the wafer substrate are dislodged and at a flow rate whereby dislodged particles are removed from the wafer substrate. The controller includes program instructions for forming a wetting layer on the wafer substrate in the process chamber by contacting the wafer substrate with the degassed pre-wetting fluid admitted through the fluid inlet at a flow rate of at least about 0.4 liters per minute.

A manufacturing method of an interposed substrate is provided. A metal-stacked layer comprising a first metal layer, an etching stop layer and a second metal layer is formed. A patterned conductor layer is formed on the first metal layer, wherein the patterned conductor layer exposes a portion of the first metal layer. A plurality of conductive pillars is formed on the patterned conductor layer, wherein the conductive pillars are separated from each other and stacked on a portion of the patterned conductor layer. An insulating material layer is formed on the metal-stacked layer, wherein the insulating material layer covers the portion of the first metal layer and encapsulates the conductive pillars and the other portion of the patterned conductor layer. The metal-stacked layer is removed to expose a lower surface opposite to an upper surface of the insulating material layer and a bottom surface of the patterned conductor layer.

Method and apparatus are provided for electroplating a surface area of an internal wall defining a cooling cavity present in a gas turbine engine component.

A process to form devices may include forming a seed layer on and/or over a substrate, modifying a seed layer selectively, forming an image-wise mold layer on and/or over a substrate and/or electrodepositing a first material on and/or over an exposed conductive area. A process may include selectively applying a temporary patterned passivation layer on a conductive substrate, selectively forming an image-wise mold layer on and/or over a substrate, forming a first material on and/or over at least one of the exposed conductive areas and/or removing a temporary patterned passivation layer. A process may include forming a sacrificial image-wise mold layer on a substrate layer, selectively placing one or more first materials in one or more exposed portions of a substrate layer, forming one or more second materials on and/or over a substrate layer and/or removing a portion of a sacrificial image-wise mold layer.

A process to form devices may include forming a seed layer on and/or over a substrate, modifying a seed layer selectively, forming an image-wise mold layer on and/or over a substrate and/or electrodepositing a first material on and/or over an exposed conductive area. A process may include selectively applying a temporary patterned passivation layer on a conductive substrate, selectively forming an image-wise mold layer on and/or over a substrate, forming a first material on and/or over at least one of the exposed conductive areas and/or removing a temporary patterned passivation layer. A process may include forming a sacrificial image-wise mold layer on a substrate layer, selectively placing one or more first materials in one or more exposed portions of a substrate layer, forming one or more second materials on and/or over a substrate layer and/or removing a portion of a sacrificial image-wise mold layer.

Disclosed are apparatus, systems, and methods for electroplating cobalt, nickel, and alloys thereof in interconnect features of partially or fully fabricated electronic devices. During electroplating, cobalt, nickel, or alloys thereof fill features by a bottom up electrofill mechanism. Examples of features that may be electrofilled with cobalt, nickel, or alloys thereof include micro TSVs, contacts for devices, and certain gates for transistors. Electroplating apparatus may include electroplating cells along with one or more instances of each of a post-electrofill module, an anneal chamber, a plasma pretreatment module, and a substrate pre-wetting module.

Disclosed are apparatus, systems, and methods for electroplating cobalt, nickel, and alloys thereof in interconnect features of partially or fully fabricated electronic devices. During electroplating, cobalt, nickel, or alloys thereof fill features by a bottom up electrofill mechanism. Examples of features that may be electrofilled with cobalt, nickel, or alloys thereof include micro TSVs, contacts for devices, and certain gates for transistors. Electroplating apparatus may include electroplating cells along with one or more instances of each of a post-electrofill module, an anneal chamber, a plasma pretreatment module, and a substrate pre-wetting module.

The present disclosure involves a method for partial gold plating of a metal packaging housing and a packaging housing thereof. The packaging housing may include a base. The base may be provided with at least one lead hole. A housing lead may be interspersed in the lead hole. The lead hole may be also provided with an insulator surrounding the housing lead. The method may include operations such as nickel plating, oxidation, gold plating, reduction, etc.

The present disclosure involves a method for partial gold plating of a metal packaging housing and a packaging housing thereof. The packaging housing may include a base. The base may be provided with at least one lead hole. A housing lead may be interspersed in the lead hole. The lead hole may be also provided with an insulator surrounding the housing lead. The method may include operations such as nickel plating, oxidation, gold plating, reduction, etc.