A method of producing a graphene film (22) includes forming a catalyst film (20) on a support (18); forming a graphene film (22) on the catalyst film (20); and electrolytically removing the catalyst film (20) from the support (18). The method may include transferring the graphene film (22) to a substrate (29). A supported graphene film includes a conductive support (18); a catalyst film (20) formed on the conductive support (18) having a thickness in a range of 1 nm to 10 μm, and a graphene film (22) formed on the catalyst film (20).

A method of producing a graphene film (22) includes forming a catalyst film (20) on a support (18); forming a graphene film (22) on the catalyst film (20); and electrolytically removing the catalyst film (20) from the support (18). The method may include transferring the graphene film (22) to a substrate (29). A supported graphene film includes a conductive support (18); a catalyst film (20) formed on the conductive support (18) having a thickness in a range of 1 nm to 10 μm, and a graphene film (22) formed on the catalyst film (20).

Embodiments of the present invention provide an electroplating apparatus for electroplating on a surface of a wafer, the electroplating apparatus comprising a plurality of electrodes, the plurality of electrodes forming electric fields on the surface of the wafer, wherein an independent electric field is formed in a designated area, the intensity of the independent electric field is independently controlled, when a notch of the wafer is positioned within the designated area, a total amount of power received by the notch within the designated area is reduced. Embodiments of the present invention also provide an electroplating method for electroplating on a surface of a wafer by using a plurality of electrodes, the method controlling the plurality of electrodes to form electric fields on the surface of the wafer, wherein an independent electric field is formed in a designated area, the intensity of the independent electric field is independently controlled, when a notch of the wafer is positioned within the designated area, a total amount of power received by the notch within the designated area is reduced. The electroplating apparatus and the electroplating method of the present invention control the electroplating height of the notch of the wafer by directly controlling the intensity of the electric field. Compared with a conventional control method which only changing the rotation speed of the wafer, the present invention is more accurate and reliable, the electroplating efficiency is also increased.

Embodiments herein relate to methods, apparatus, and systems for electroplating metal into recessed features using a superconformal fill mechanism that provides relatively faster plating within a feature and relatively slower plating in the field region. Moreover, within the feature, plating occurs faster toward the bottom of the feature compared to the top of the feature. The result is that the feature is filled with metal from the bottom upwards, resulting in a high quality fill without the formation of seams or voids, defects that are likely where a conformal fill mechanism is used. The superconformal fill mechanism relies on the presence of a sacrificial oxidant molecule that is used to develop a differential current efficiency within the feature compared to the field region. Various plating conditions are balanced against one another to ensure that the feature fills from the bottom upwards. No organic plating additives are necessary, though plating additives can be used to improve the process.

Embodiments herein relate to methods, apparatus, and systems for electroplating metal into recessed features using a superconformal fill mechanism that provides relatively faster plating within a feature and relatively slower plating in the field region. Moreover, within the feature, plating occurs faster toward the bottom of the feature compared to the top of the feature. The result is that the feature is filled with metal from the bottom upwards, resulting in a high quality fill without the formation of seams or voids, defects that are likely where a conformal fill mechanism is used. The superconformal fill mechanism relies on the presence of a sacrificial oxidant molecule that is used to develop a differential current efficiency within the feature compared to the field region. Various plating conditions are balanced against one another to ensure that the feature fills from the bottom upwards. No organic plating additives are necessary, though plating additives can be used to improve the process.

Apparatus and method for cleaning the inner surface of a pipeline from deposits and for forming a protective coating are disclosed. The apparatus includes a cleaning tool which is caused to move in the interior of the pipeline by a flow of a fluid, the cleaning tool comprising a plurality of guide discs engaging the pipeline surface and mounted along a longitudinal axis of the cleaning tool, an anode positioned inside the cleaning tool, and an impressed current source electrically connected to the anode and the interior of the pipeline, the interior of the pipeline acting as a cathode when current is applied from the current source so that ions flow from the anode, through the fluid, to the interior of the pipeline.

Apparatus and method for cleaning the inner surface of a pipeline from deposits and for forming a protective coating are disclosed. The apparatus includes a cleaning tool which is caused to move in the interior of the pipeline by a flow of a fluid, the cleaning tool comprising a plurality of guide discs engaging the pipeline surface and mounted along a longitudinal axis of the cleaning tool, an anode positioned inside the cleaning tool, and an impressed current source electrically connected to the anode and the interior of the pipeline, the interior of the pipeline acting as a cathode when current is applied from the current source so that ions flow from the anode, through the fluid, to the interior of the pipeline.

An apparatus and a method for the metallization of an object including placing the object in an electrolyte, placing an anode in contact with the electrolyte, placing a metallization contact of a cathode in contact with the object, applying an electrical tension between the anode and the cathode, wherein the metallization contact is displaced in relation to the object during the metallization of the object to achieve a complete and continuous metallization of the object's surface.

An apparatus and a method for the metallization of an object including placing the object in an electrolyte, placing an anode in contact with the electrolyte, placing a metallization contact of a cathode in contact with the object, applying an electrical tension between the anode and the cathode, wherein the metallization contact is displaced in relation to the object during the metallization of the object to achieve a complete and continuous metallization of the object's surface.

The present disclosure concerns an array of chemical and electrochemical treatment cells. The cells include electrochemical cells that individually include a plating tank, a power supply, and an anode. A flight bar for supporting a cathode is moved from one tank to another for treating and plating a cathode surface. Within an electrochemical tank, the power supply operates a circuit with metal ions being eroded from the anode and being deposited onto the cathode surface. A plating apparatus is configured to simultaneously provide mechanical support, a cathodic connection, and agitation to a cathode in a plating tank. The plating apparatus includes an agitator which rotates the cathode about a fixed pivot connection to provide motion along a lateral axis and a vertical axis.