C25D5/04

Localized, in-vacuum modification of small structures

A charge transfer mechanism is used to locally deposit or remove material for a small structure. A local electrochemical cell is created without having to immerse the entire work piece in a bath. The charge transfer mechanism can be used together with a charged particle beam or laser system to modify small structures, such as integrated circuits or micro-electromechanical system. The charge transfer process can be performed in air or, in some embodiments, in a vacuum chamber.

Localized, in-vacuum modification of small structures

A charge transfer mechanism is used to locally deposit or remove material for a small structure. A local electrochemical cell is created without having to immerse the entire work piece in a bath. The charge transfer mechanism can be used together with a charged particle beam or laser system to modify small structures, such as integrated circuits or micro-electromechanical system. The charge transfer process can be performed in air or, in some embodiments, in a vacuum chamber.

APPARATUS AND METHOD FOR UNIFORM METALLIZATION ON SUBSTRATE
20170260641 · 2017-09-14 · ·

An apparatus and method for uniform metallization on substrate are provided, achieving highly uniform metallic film deposition at a rate far greater than a conventional film growth rate in electrolyte solutions. The apparatus includes an immersion bath (3021), at least one set of electrode (3002), a substrate holder (3003), at least one ultra/mega sonic device (3004), a reflection plate (3005), and a rotating actuator (3030). The immersion bath contains at least one metal salt electrolyte (3020). The at least one set of electrode (3002) connects to an independent power supply. The substrate holder (3003) holds at least one substrate and electrically connects with a conductive side of the substrate. The conductive side of the substrate is exposed to face the electrode. The at least one ultra/mega sonic device (3004) and the reflection plate (3005) are disposed parallel for generating ultra/mega sonic standing wave in the immersion bath. The rotating actuator (3030) rotates the substrate holder (3003) along its axis in the standing wave field, so as to result in a uniform overall power intensity distribution across the substrate in an accumulated time.

METHOD AND DEVICE FOR THE GALVANIC APPLICATION OF A SURFACE COATING
20210395912 · 2021-12-23 ·

A method for galvanic application of a surface coating, in particular a chromium coating, to a body, for example a machine component. Before the galvanic application of the surface coating, a layer of a compound that can be oxidized by an electrolyte solution that is used, preferably a polyhydroxy compound with a viscosity of at least 1000 mPas at 25° C., is applied to the body. A method for galvanic application of a surface coating, in particular a chromium coating, to a body, for example a machine component, wherein the surface coating is carried out in a closed reactor in an at least two-stage, preferably three-stage process, is also disclosed. An electrolyte solution contained in the reactor at a temperature T1 for carrying out a subsequent process stage is substituted by an electrolyte solution at a temperature T2≠T1. A device for carrying out this method is also disclosed.

METHOD AND DEVICE FOR THE GALVANIC APPLICATION OF A SURFACE COATING
20210395912 · 2021-12-23 ·

A method for galvanic application of a surface coating, in particular a chromium coating, to a body, for example a machine component. Before the galvanic application of the surface coating, a layer of a compound that can be oxidized by an electrolyte solution that is used, preferably a polyhydroxy compound with a viscosity of at least 1000 mPas at 25° C., is applied to the body. A method for galvanic application of a surface coating, in particular a chromium coating, to a body, for example a machine component, wherein the surface coating is carried out in a closed reactor in an at least two-stage, preferably three-stage process, is also disclosed. An electrolyte solution contained in the reactor at a temperature T1 for carrying out a subsequent process stage is substituted by an electrolyte solution at a temperature T2≠T1. A device for carrying out this method is also disclosed.

LOCALIZED ELECTROCHEMICAL DEPOSITION

Localized electrochemical deposition (LECD) is provided. The aim of LECD is to create a patterned electrodeposited metal layer on a cathode without the use of pre-deposition patterning steps. In embodiments described herein, an LECD device includes a cathode (a material to be plated) placed sufficiently close to a formation anode in a metal electrolyte chemical bath. The LECD device is then activated electrically in solution. An electric field created by the formation anode determines the locations of metal deposition, providing a localized deposition without need for photolithography or other masking of the material to be plated.

LOCALIZED ELECTROCHEMICAL DEPOSITION

Localized electrochemical deposition (LECD) is provided. The aim of LECD is to create a patterned electrodeposited metal layer on a cathode without the use of pre-deposition patterning steps. In embodiments described herein, an LECD device includes a cathode (a material to be plated) placed sufficiently close to a formation anode in a metal electrolyte chemical bath. The LECD device is then activated electrically in solution. An electric field created by the formation anode determines the locations of metal deposition, providing a localized deposition without need for photolithography or other masking of the material to be plated.

PLATING APPARATUS AND PLATING METHOD
20220178046 · 2022-06-09 ·

A plating apparatus that allows shielding a specific portion of a substrate at a desired timing is achieved. The plating apparatus includes a plating tank 410 for housing a plating solution, an anode 430 arranged in the plating tank 410, a substrate holder 440 for holding a substrate Wf with a surface to be plated facing downward, a rotation mechanism 447 for rotating the substrate holder 440, and a shielding mechanism 460 moving a shielding member 482 between the anode 430 and the substrate Wf depending on a rotation angle of the substrate holder 440.

Plating apparatus

A plating apparatus including a plating bath, a substrate holder to be arranged in the plating bath and adapted to hold a substrate, an anode for generating an electric field between the substrate and the anode, and at least one electric field shielding body for shielding the substrate holder and a part or the whole of the electric field, wherein the electric field shielding body has an opening portion for allowing the electric field between the substrate and the anode to pass therethrough, and is configured so as to be capable of adjusting an opening size in a first direction of the opening portion and an opening size in a second direction of the opening portion independently of each other.

Plating apparatus

A plating apparatus including a plating bath, a substrate holder to be arranged in the plating bath and adapted to hold a substrate, an anode for generating an electric field between the substrate and the anode, and at least one electric field shielding body for shielding the substrate holder and a part or the whole of the electric field, wherein the electric field shielding body has an opening portion for allowing the electric field between the substrate and the anode to pass therethrough, and is configured so as to be capable of adjusting an opening size in a first direction of the opening portion and an opening size in a second direction of the opening portion independently of each other.