A plating apparatus and plating methods for plating metal layers on a substrate. In an embodiment, a plating method comprises: step 1: immersing a substrate into plating solution of a plating chamber assembly including at least a first anode and a second anode (3001); step 2: turning on a first plating power supply applied on the first anode, setting the first plating power supply to output a power value P.sub.11 and continue with a period T.sub.11 (3002); step 3: when the period T.sub.11 ends, adjusting the first plating power supply applied on the first anode to output a power value P.sub.12 and continue with a period T.sub.12, at the same time, turning on a second plating power supply applied on the second anode, and setting the second plating power supply to output a power value P.sub.21 and continue with a period T.sub.21 (3003); and step 4: when the period T.sub.21 ends, adjusting the second plating power supply applied on the second anode to output a power value P.sub.22 and continue with a period T.sub.22; wherein step 2 to step 4 are performed periodically.

In one example, an electroplating apparatus is provided for electroplating a wafer. The electroplating apparatus comprises a wafer holder for holding a wafer during an electroplating operation and a plating cell configured to contain an electrolyte during the electroplating operation. An anode chamber is disposed within the plating cell, and a charge plate is disposed within the anode chamber. An anode is positioned above the charge plate within the anode chamber. In some examples, the anode chamber is a membrane-less anode chamber.

In one example, an electroplating apparatus is provided for electroplating a wafer. The electroplating apparatus comprises a wafer holder for holding a wafer during an electroplating operation and a plating cell configured to contain an electrolyte during the electroplating operation. An anode chamber is disposed within the plating cell, and a charge plate is disposed within the anode chamber. An anode is positioned above the charge plate within the anode chamber. In some examples, the anode chamber is a membrane-less anode chamber.

Provided is a technique that ensures the suppressed deterioration of plating quality of a substrate due to air bubbles that remain on a surface to be plated of the substrate.

A plating apparatus 1000 includes a plating tank 10, a substrate holder 30, a rotation mechanism 40, and an elevating mechanism 50. The plating tank 10 is configured to accumulate a plating solution and include an anode 11 arranged inside the plating tank. The substrate holder 30 is arranged above the anode and configured to hold a substrate as a cathode such that a surface to be plated of the substrate faces downward. The substrate holder includes a ring 31 projecting below an outer peripheral edge of the surface to be plated of the substrate. The rotation mechanism 40 is configured to rotate the substrate holder. The elevating mechanism 50 is configured to elevate the substrate holder. The ring has a lower surface, and at least one protrusion 35 projecting toward a lower side is arranged on a part of the lower surface.

An electroplating apparatus includes an electrode at the bottom of a chamber, an ionically resistive element with through holes arranged horizontally at the top of the chamber, with a membrane in the middle. One or more panels extend vertically and parallelly from the membrane to the element and extend linearly across the chamber, forming a plurality of regions between the membrane and the element. A substrate with a protuberance extending along a chord of the substrate and contacting a top surface of the element is arranged above a first region. An electrolyte flowed between the substrate and the element descends into the first region via the through holes on a first side of the protuberance and ascends from the first region via the through holes on a second side of the protuberance, forcing air bubbles out from a portion of the element associated with the first region.

An electroplating apparatus includes an electrode at the bottom of a chamber, an ionically resistive element with through holes arranged horizontally at the top of the chamber, with a membrane in the middle. One or more panels extend vertically and parallelly from the membrane to the element and extend linearly across the chamber, forming a plurality of regions between the membrane and the element. A substrate with a protuberance extending along a chord of the substrate and contacting a top surface of the element is arranged above a first region. An electrolyte flowed between the substrate and the element descends into the first region via the through holes on a first side of the protuberance and ascends from the first region via the through holes on a second side of the protuberance, forcing air bubbles out from a portion of the element associated with the first region.

An apparatus for electroplating a semiconductor wafer includes an insert member configured to circumscribe a processing region. The insert member has a top surface. A portion of the top surface of the insert member has an upward slope that slopes upward from a peripheral area of the top surface of the insert member toward the processing region. The apparatus also includes a seal member having an annular-disk shape. The seal member is positioned on the top surface of the insert member. The seal member is flexible such that an outer radial portion of the seal member conforms to the upward slope of the top surface of the insert member and such that an inner radial portion of the seal member projects inward toward the processing region.

An apparatus for electroplating a semiconductor wafer includes an insert member configured to circumscribe a processing region. The insert member has a top surface. A portion of the top surface of the insert member has an upward slope that slopes upward from a peripheral area of the top surface of the insert member toward the processing region. The apparatus also includes a seal member having an annular-disk shape. The seal member is positioned on the top surface of the insert member. The seal member is flexible such that an outer radial portion of the seal member conforms to the upward slope of the top surface of the insert member and such that an inner radial portion of the seal member projects inward toward the processing region.

A hydrogen evolution assisted electroplating nozzle includes a nozzle tip configured to interface with a portion of a substructure. The nozzle also includes an inner coaxial tube connected to a reservoir containing an electrolyte and an anode, the inner coaxial tube configured to dispense the electrolyte through the nozzle tip onto the portion of the substructure. The nozzle also includes an outer coaxial tube encompassing the inner coaxial tube, the outer coaxial tube configured to extract the electrolyte from the portion of the substructure. The nozzle also includes at least one contact pin configured to make electrical contact with a conductive track on the substrate.

A hydrogen evolution assisted electroplating nozzle includes a nozzle tip configured to interface with a portion of a substructure. The nozzle also includes an inner coaxial tube connected to a reservoir containing an electrolyte and an anode, the inner coaxial tube configured to dispense the electrolyte through the nozzle tip onto the portion of the substructure. The nozzle also includes an outer coaxial tube encompassing the inner coaxial tube, the outer coaxial tube configured to extract the electrolyte from the portion of the substructure. The nozzle also includes at least one contact pin configured to make electrical contact with a conductive track on the substrate.