An electroconductive material includes a Cu or Cu alloy base member, a Cu—Sn alloy coating layer, and a Sn coating layer. The Cu—Sn alloy coating layer has a Cu content of 20 to 70 atomic %, and an average thickness of 0.2 to 3.0 μm. The Sn coating layer has an average thickness of 0.2 to 5.0 μm. A surface of the electroconductive material has an arithmetic average roughness Ra of at least 0.15 μm in at least one direction along the surface and 3.0 μm or less in all directions along the surface. The Cu—Sn alloy coating layer is partially exposed at the surface of the electroconductive material. An area ratio of the Cu—Sn alloy coating layer exposed at the surface of the electroconductive material is 3 to 75%. An average crystal grain size on a surface of the Cu—Sn alloy coating layer is less than 2 μm.

An electroconductive material includes a Cu or Cu alloy base member, a Cu—Sn alloy coating layer, and a Sn coating layer. The Cu—Sn alloy coating layer has a Cu content of 20 to 70 atomic %, and an average thickness of 0.2 to 3.0 μm. The Sn coating layer has an average thickness of 0.2 to 5.0 μm. A surface of the electroconductive material has an arithmetic average roughness Ra of at least 0.15 μm in at least one direction along the surface and 3.0 μm or less in all directions along the surface. The Cu—Sn alloy coating layer is partially exposed at the surface of the electroconductive material. An area ratio of the Cu—Sn alloy coating layer exposed at the surface of the electroconductive material is 3 to 75%. An average crystal grain size on a surface of the Cu—Sn alloy coating layer is less than 2 μm.

A Cu core ball and a method of manufacturing such a Cu core ball. Purity of the Cu internal ball is at least 99.9% and not greater than 99.995%. A total contained amount of Pb and/or Bi in impurity contained in the Cu ball is equal to or larger than 1 ppm. Its sphericity is at least 0.95. A solder plating film coated on the Cu ball is of Sn solder or a lead free solder alloy whose primary component is Sn. In the solder plating film, a contained amount of U is not more than 5 ppb and that of Th is not more than 5 ppb. A total alpha dose of the Cu ball and the solder plating film is not more than 0./0200 cph/cm2. An arithmetic average roughness of the Cu core ball is equal to or less than 0.3 μm.

Direct current plating methods inhibit void formation, reduce dimples and eliminate nodules. The method involves electroplating copper at a high current density followed by a pause in electroplating and then turning on the current to electroplate at a lower current density to fill through-holes.

Described herein are methods of preparing nanolaminated brass coatings and components having desirable and useful properties. Also described are nanolaminated brass components and plastic and polymeric substrates coated with nanolaminated brass coatings having desirable and useful properties.

Described herein are methods of preparing nanolaminated brass coatings and components having desirable and useful properties. Also described are nanolaminated brass components and plastic and polymeric substrates coated with nanolaminated brass coatings having desirable and useful properties.

A false report on appearance inspection of a semiconductor device is prevented by suppressing variation in surface state of an electrodeposited gold electrode. In formation of an electrodeposited gold electrode, an electrodeposited gold electrode comprised of a plurality of electrodeposited gold layers in the stack is formed by alternately repeating a step of performing energization between an anode electrode and a cathode electrode provided in a treatment cup of a plating apparatus to cause crystal growth of an electrodeposited gold layer (energization ON), and a step of performing no energization between the anode electrode and the cathode electrode (energization OFF). Consequently, even if aging variation occurs in composition of the plating solution, variation in surface state of the electrodeposited gold electrode is suppressed, and a surface state with a surface roughness of, for example, about 0.025 rad can be maintained.

An article comprises a metal alloy substrate and a plated wear interface layer disposed over a surface of the metal alloy substrate. The wear interface layer has a chemical composition including between about 0.005 wt % and about 0.050 wt % of antimony (Sb), and the balance silver (Ag) and incidental impurities.

An article comprises a metal alloy substrate and a plated wear interface layer disposed over a surface of the metal alloy substrate. The wear interface layer has a chemical composition including between about 0.005 wt % and about 0.050 wt % of antimony (Sb), and the balance silver (Ag) and incidental impurities.

The disclosure relates to a method for manufacturing a transfer film including an electrode layer, the method comprising: an electrode layer formation step of forming an electrode layer on a carrier member by using a conductive material; a placement step of placing the carrier member on at least one side of an insulating resin layer respectively; a bonding step of bonding the carrier member and the insulating resin layer together by applying pressure thereto; and a transfer step of removing the carrier member to transfer the electrode layer on the insulating resin layer.