Exemplary methods of electroplating include contacting a patterned substrate with a plating bath in an electroplating chamber, where the pattern substrate includes at least one opening having a bottom surface and one or more sidewall surfaces. The methods may further include forming a nanotwin-containing metal material in the at least one opening. The metal material may be formed by two or more cycles that include delivering a forward current from a power supply through the plating bath of the electroplating chamber for a first period of time, plating a first amount of the metal on the bottom surface of the opening on the patterned substrate and a second amount of the metal on the sidewall surfaces of the opening, and delivering a reverse current from the power supply through the plating bath of the electroplating chamber to remove some of the metal plated in the opening on the patterned substrate.

An antimicrobial air treatment device and a method of its construction. The antimicrobial air treatment device comprises an antimicrobial metal nanoparticle mesh comprising a steel support mesh and a layer of copper nanoparticles disposed on the steel support mesh. The antimicrobial air treatment device may be in the form of a facemask or a component of a moving air filtration system such as an HVAC system, an automobile cabin air filtration system, and an air purifier. The antimicrobial air treatment device may contain one or more filtration layers of filtration medium. The method of constructing the antimicrobial air treatment device involves the preparation of the antimicrobial metal nanoparticle mesh by an electrodeposition technique.

A device for a cell of an apparatus for wet processing of a planar workpiece, comprises a structure comprising first and second walls. The workpiece is movable in a central plane through a space between the first and second walls in a first direction (y). Apertures for introducing pressurised liquid between the first and second walls are on opposite sides of the central plane and facing the central plane. The apertures are distributed in the first direction (y) and in a second direction (x) transverse to the first direction (y). Discharge openings for the liquid to leave the space are on opposite sides, in the second direction (x), along the space in the first direction (y). The first and second walls form barriers to liquid flow from the space in a direction (z) perpendicular to the central plane. Channels through the walls are arranged to conduct liquid to respective one of the apertures.

One embodiment of the present invention relates to a production method of .sup.225Ac includes; a production step of a .sup.226Ra target including an electrodeposition step of electrodepositing a .sup.226Ra-containing substance on a substrate by using an electrodeposition solution that contains .sup.226Ra ions and a pH buffer, and an irradiating step of irradiating the .sup.226Ra target with at least one selected from charged particles, photons, and neutrons.

A method of coating a substrate, the method comprises adding a nanocarbon material to an electrophoretic solution in an electrophoretic deposition apparatus including the substrate and an electrode spaced from the substrate, and applying a current to the substrate and the electrode to deposit the nanocarbon material onto the substrate.

The present invention relates to applying at least one ultra/mega sonic device and its reflection plate for forming standing wave in a metallization apparatus to achieve highly uniform metallic film deposition at a rate far greater than conventional film growth rate in electrolyte. In the present invention, the substrate is dynamically controlled so that the position of the substrate passing through the entire acoustic field with different power intensity in each motion cycle. This method guarantees each location of the substrate to receive the same amount of total sonic energy dose over the interval of the process time, and to accumulatively grow a uniform deposition thickness at a rapid rate.

The present invention relates to applying at least one ultra/mega sonic device and its reflection plate for forming standing wave in a metallization apparatus to achieve highly uniform metallic film deposition at a rate far greater than conventional film growth rate in electrolyte. In the present invention, the substrate is dynamically controlled so that the position of the substrate passing through the entire acoustic field with different power intensity in each motion cycle. This method guarantees each location of the substrate to receive the same amount of total sonic energy dose over the interval of the process time, and to accumulatively grow a uniform deposition thickness at a rapid rate.

The present invention relates to a plating apparatus and a plating method for partially forming a plating film on an object to be plated. The plating apparatus includes: a rotary electrode configured to be rotatable; a plating solution holding unit arranged to the rotary electrode and configured to hold a plating solution; and a power supply unit configured to apply a voltage between the portion to be plated and the rotary electrode.

The present invention relates to a plating apparatus and a plating method for partially forming a plating film on an object to be plated. The plating apparatus includes: a rotary electrode configured to be rotatable; a plating solution holding unit arranged to the rotary electrode and configured to hold a plating solution; and a power supply unit configured to apply a voltage between the portion to be plated and the rotary electrode.

Exemplary methods of electroplating may include providing a patterned substrate having at least one opening, where the opening includes one or more sidewalls and a bottom surface. The methods may also include plating a first portion of ruthenium-containing material on the bottom surface of the opening at a first deposition rate and a second portion of ruthenium-containing material on the sidewalls of the opening at a second deposition rate, where the first deposition rate is greater than the second deposition rate. The methods may be used to make integrated circuit devices that include void-free, electrically-conductive lines and columns of ruthenium-containing materials.