In one embodiment of the present disclosure, a method for electrochemical deposition on a workpiece includes (a) obtaining a workpiece including a feature; (b) depositing a first conductive layer in the feature; (c) moving the workpiece to an integrated electrochemical deposition plating tool configured for hydrogen radical H* surface treatment and electrochemical deposition; (d) treating the first conductive layer using a hydrogen radical H* surface treatment in a treatment chamber of the plating tool to produce a treated first conductive layer; and (e) maintaining the workpiece in the same plating tool and depositing a second conductive layer in the feature on the treated first conductive layer in an electrochemical deposition chamber of the plating tool.

A method comprising incorporating indium into an entire Sn film for preventing the growth of whiskers from the Sn film, wherein the Sn film is applied to a metallic substrate. The indium is present in the entire thickness of the Sn film.

PROBLEMS TO BE SOLVED: To provide a process for roughening both sides of a copper plate by forming a protrusion with a fine bump shape on the both sides of the copper plate, and then to provide a process for a deterioration of an electroplating solution for plating copper to become hard to progress therein. MEANS FOR SOLVING THE PROBLEMS: First of all, there is designed to be arranged electrodes (3, 3) as a similar pole for therebetween to be opposed to each other in an electroplating copper solution 2, and then to be arranged a copper plate 4 at therebetween. And then at first there becomes to be performed an anodic treatment for generating a copper fine particles on both surfaces of the copper plate 4, by performing an electrolytic process with the copper plate 4 as a positive electrode and the electrodes 3 as negative electrodes. And then thereafter there becomes to be performed a cathodic treatment, by performing an electroplating of copper with the copper plate 4 as a negative electrode and the electrodes 3 as positive electrodes, for the copper fine particles to be fixed onto the surfaces of the copper plate 4. Furthermore, there becomes to be formed the above mentioned protrusion with the fine bump shape thereon, by performing the anodic treatment and then the cathodic treatment as not less than one cycle thereof.

PROBLEMS TO BE SOLVED: To provide a process for roughening both sides of a copper plate by forming a protrusion with a fine bump shape on the both sides of the copper plate, and then to provide a process for a deterioration of an electroplating solution for plating copper to become hard to progress therein. MEANS FOR SOLVING THE PROBLEMS: First of all, there is designed to be arranged electrodes (3, 3) as a similar pole for therebetween to be opposed to each other in an electroplating copper solution 2, and then to be arranged a copper plate 4 at therebetween. And then at first there becomes to be performed an anodic treatment for generating a copper fine particles on both surfaces of the copper plate 4, by performing an electrolytic process with the copper plate 4 as a positive electrode and the electrodes 3 as negative electrodes. And then thereafter there becomes to be performed a cathodic treatment, by performing an electroplating of copper with the copper plate 4 as a negative electrode and the electrodes 3 as positive electrodes, for the copper fine particles to be fixed onto the surfaces of the copper plate 4. Furthermore, there becomes to be formed the above mentioned protrusion with the fine bump shape thereon, by performing the anodic treatment and then the cathodic treatment as not less than one cycle thereof.

Provided is a roughened plated sheet comprising a roughened plated layer having a roughened nickel plated layer and a zinc plated layer famed on at least one surface of a metal substrate in this order from the metal substrate side, wherein a ten-point average roughness Rz.sub.jis of a surface of the roughened plated layer, according to laser microscope measurement, is 3 μm or more.

An aqueous acidic copper electroplating bath that produces a satin deposit includes a source of copper ions, an acid, a satin additive, and optionally one or more acidic copper electroplating bath additive(s), wherein the satin additive includes a block copolymer with the structure of RO(EO)m(PO)nH.

Crystal plane orientation enrichment compounds are applied to copper to modify copper grain orientation distribution to the favorable crystal plain orientation to enhance copper electroplating. Electroplating copper on the modified copper enables faster and selective electroplating.

Crystal plane orientation enrichment compounds are applied to copper to modify copper grain orientation distribution to the favorable crystal plain orientation to enhance copper electroplating. Electroplating copper on the modified copper enables faster and selective electroplating.

A metal member includes a metal substrate, a first intermediate plating layer, a second intermediate plating layer, and a precious metal plating layer. The metal substrate includes a surface constituted of a plurality of crystal grains. The first intermediate plating layer is directly formed on the plurality of crystal grains of the metal substrate, contains a nickel element, and is non-oriented with respect to each crystal orientation of the plurality of crystal grains of the metal substrate. The second intermediate plating layer is directly formed on the first intermediate plating layer. The precious metal plating layer is formed on the second intermediate plating layer.

A seeded substrate is first prepared. The seeded substrate includes an insulation substrate having a main surface composed of a first region and a second region other than the first region, and a conductive seed layer provided on the first region. Subsequently, a conductive layer is formed on at least the second region to obtain a first treated substrate. An insulation layer is then formed on the first treated substrate. The seed layer is then exposed. A metal layer is then formed on the surface of the seed layer. Here, a voltage is applied between the anode and the seed layer while a solid electrolyte membrane containing a metal ion-containing solution being disposed between the second treated substrate and the anode, and the solid electrolyte membrane and the seed layer being pressed into contact with each other. Thereafter, the insulation layer and the conductive layer are removed.