Methods for treating a substrate are disclosed. The substrate is deoxidized and then immersed in an electrodepositable pretreatment composition comprising a lanthanide series element and/or a Group IIIB metal, an oxidizing agent, and a metal-complexing agent to deposit a coating from the electrodepositable pretreatment composition onto a surface of the substrate. Optionally, the electrodepositable pretreatment composition may comprise a surfactant. A coating from a spontaneously depositable pretreatment composition comprising a Group IIIB and/or Group IVB metal may be deposited on the substrate surface prior to electrodepositing a coating from the electrodepositable pretreatment composition. Following electrodeposition of the electrodepositable pretreatment composition, the substrate optionally may be contacted with a sealing composition comprising phosphate and a Group IIIB and/or IVB metal. Substrates treated according to the methods also are disclosed.

Methods for treating a substrate are disclosed. The substrate is deoxidized and then immersed in an electrodepositable pretreatment composition comprising a lanthanide series element and/or a Group IIIB metal, an oxidizing agent, and a metal-complexing agent to deposit a coating from the electrodepositable pretreatment composition onto a surface of the substrate. Optionally, the electrodepositable pretreatment composition may comprise a surfactant. A coating from a spontaneously depositable pretreatment composition comprising a Group IIIB and/or Group IVB metal may be deposited on the substrate surface prior to electrodepositing a coating from the electrodepositable pretreatment composition. Following electrodeposition of the electrodepositable pretreatment composition, the substrate optionally may be contacted with a sealing composition comprising phosphate and a Group IIIB and/or IVB metal. Substrates treated according to the methods also are disclosed.

Disclosed is a copper foil including a copper layer having a matte surface and a shiny surface, and an anticorrosive layer disposed on the copper layer, wherein the copper foil has a residual stress of 0.5 to 25 Mpa, based on absolute value, and the copper layer has a plurality of crystal planes, wherein a ratio [TCR (220)] of a texture coefficient (TC) of (220) crystal plane of the copper layer to a total of texture coefficients (TC) of (111), (200), (220) and (311) crystal planes of the copper layer is 5 to 30%.

Disclosed is a copper foil including a copper layer having a matte surface and a shiny surface, and an anticorrosive layer disposed on the copper layer, wherein the copper foil has a residual stress of 0.5 to 25 Mpa, based on absolute value, and the copper layer has a plurality of crystal planes, wherein a ratio [TCR (220)] of a texture coefficient (TC) of (220) crystal plane of the copper layer to a total of texture coefficients (TC) of (111), (200), (220) and (311) crystal planes of the copper layer is 5 to 30%.

According to a first aspect of the invention, a method for producing a metal-CNT composite material is proposed. The method includes providing a layer of CNT by depositing CNT coated with a polyphenol or poly(catecholamine) coating and filling the interstices of the carbon nanotubes layer with a metal so as to form a metal matrix, in which CNT are embedded. The filling is effected by electrode position or by electroless deposition. The polyphenol or poly(catecholamine) coating is crosslinked by metal ions, the metal ions promoting, as metal seeds, adhesion and/or growth of the metal matrix during the filling step. A further aspect of the invention relates to the metal-CNT composite obtainable by the method.

A method of manufacture can comprise: treating a surface of a polymeric substrate with a laser induced graphene; and bonding a metallic layer to the laser induced graphene.

A semiconductor apparatus and methods of processing a semiconductor workpiece are provided. The semiconductor apparatus for pre-wetting a semiconductor workpiece includes a process chamber, a workpiece holder disposed within the process chamber to hold the semiconductor workpiece, a pre-wetting fluid tank disposed outside the process chamber and containing a pre-wetting fluid, and a conduit coupled to the pre-wetting fluid tank and extending into the process chamber. The conduit delivers the pre-wetting fluid from the pre-wetting fluid tank out through an outlet of the conduit to wet a major surface of the semiconductor workpiece comprising a plurality of recess portions.

A semiconductor apparatus and methods of processing a semiconductor workpiece are provided. The semiconductor apparatus for pre-wetting a semiconductor workpiece includes a process chamber, a workpiece holder disposed within the process chamber to hold the semiconductor workpiece, a pre-wetting fluid tank disposed outside the process chamber and containing a pre-wetting fluid, and a conduit coupled to the pre-wetting fluid tank and extending into the process chamber. The conduit delivers the pre-wetting fluid from the pre-wetting fluid tank out through an outlet of the conduit to wet a major surface of the semiconductor workpiece comprising a plurality of recess portions.

A method for producing metal decorations on a curved dial made of insulating material includes forming, by a method of the LIGA-UV type, a mould made of photosensitive resin and of galvanically depositing a layer of at least one metal from the conductive layer in order to form a block substantially reaching the upper surface of the photosensitive resin.

A method for producing metal decorations on a curved dial made of insulating material includes forming, by a method of the LIGA-UV type, a mould made of photosensitive resin and of galvanically depositing a layer of at least one metal from the conductive layer in order to form a block substantially reaching the upper surface of the photosensitive resin.