Patent classifications
C25D5/54
Flexible transparent thin film
The present invention provides a transparent conductive thin film which is flexible for suiting substantially all kinds of electronic and optoelectronic devices or display panel. The present conductive thin film includes at least one transparent substrate, a deformable layer and a conductive network pattern having a high aspect ratio such that at least one surface of the conductive network being exposed out of the deformable layer or the transparent substrate for contacting with an external structure while a large proportion thereof stays firmly integrated into the substrate. The present invention also relates to methods of fabricating a transparent conductive thin film including the structural features of the transparent conductive thin film of the present invention. Various optimizations of the present methods are also provided in the present invention for facilitating large area thin film fabrication and large scale production.
Electrical chemical plating process
An electrical chemical plating process is provided. A semiconductor structure is provided in an electrical plating platform. A pre-electrical-plating step is performed wherein the pre-electrical-plating step is carried out under a fixed voltage environment and lasts for 0.2 to 0.5 seconds after the current is above the threshold current of the electrical plating platform. After the pre-electrical-plating step, a first electrical plating step is performed on the semiconductor structure.
Semiconductor apparatus, stacked semiconductor apparatus, encapsulated stacked-semiconductor apparatus, and method for manufacturing the same
A semiconductor apparatus includes a semiconductor device, on-semiconductor-device metal pad and metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first insulating layer on which the semiconductor device is placed, a second insulating layer formed on the semiconductor device, a third insulating layer formed on the second layer. The metal interconnect is electrically connected to the semiconductor device via the on-semiconductor-device metal pad at an upper surface of the second layer, penetrates the second layer from its upper surface, and is electrically connected to the through electrode at an lower surface of the second layer, and an under-semiconductor-device metal interconnect is between the first layer and the semiconductor device, and the under-semiconductor-device metal interconnect is electrically connected to the metal interconnect at the lower surface of the second layer.
Apparatus for electro-chemical plating
An electrochemical plating apparatus for performing an edge bevel removal process on a wafer includes a cell chamber. The cell chamber includes two or more nozzles located adjacent to the edge of the wafer. A flow regulator is arranged with each of the two or more nozzles, which is configured to regulate an tap width of a deposited film flowing out through the each of the two or more nozzles. The electrochemical plating apparatus further includes a controller to control the flow regulator such that tap width of the deposited film includes a pre-determined surface profile. The two or more nozzles are located in radially or angularly different dispensing positions above the wafer.
Apparatus for electro-chemical plating
An electrochemical plating apparatus for performing an edge bevel removal process on a wafer includes a cell chamber. The cell chamber includes two or more nozzles located adjacent to the edge of the wafer. A flow regulator is arranged with each of the two or more nozzles, which is configured to regulate an tap width of a deposited film flowing out through the each of the two or more nozzles. The electrochemical plating apparatus further includes a controller to control the flow regulator such that tap width of the deposited film includes a pre-determined surface profile. The two or more nozzles are located in radially or angularly different dispensing positions above the wafer.
Highly magnetically permeable alloy deposition method for magnetic sensors
In one example, a method to manufacture a magnetic sensor, comprises providing an electrolyte solution, submersing a substrate in the electrolyte solution, submersing a plurality of ingots in the electrolyte solution, wherein the ingots comprises a metal that is magnetic, and depositing the metal on the substrate by applying a voltage between the metal ingot and the substrate to result in magnetic alloy layer on the substrate. Other examples and related methods are also disclosed herein.
Highly magnetically permeable alloy deposition method for magnetic sensors
In one example, a method to manufacture a magnetic sensor, comprises providing an electrolyte solution, submersing a substrate in the electrolyte solution, submersing a plurality of ingots in the electrolyte solution, wherein the ingots comprises a metal that is magnetic, and depositing the metal on the substrate by applying a voltage between the metal ingot and the substrate to result in magnetic alloy layer on the substrate. Other examples and related methods are also disclosed herein.
CARBON FIBER REINFORCED COMPOSITES AND METHOD FOR MAKING SAME
A surface-modified carbon fiber composition comprising: (i) a carbon fiber having an outer surface, a width of at least 1 micron, and a length-to-width aspect ratio of at least 1000; and (ii) an amine-containing polymer coating bonded to the outer surface of the carbon fiber, wherein the amine-containing polymer contains at least one of primary and secondary amino groups. A method for producing the coated carbon fiber comprises: immersing an uncoated carbon fiber in an electrolyte solution containing a dissolved amount of an amine-containing polymer containing at least one of primary and secondary amino groups while the uncoated carbon fiber is connected to a negatively charged electrode and positioned adjacent to a positively charged electrode in the electrolyte solution to result in the electrodeposition of a coating of the amine-containing polymer on the uncoated carbon fiber. Also described herein are carbon fiber-polymer composites and methods of producing them.
CARBON FIBER REINFORCED COMPOSITES AND METHOD FOR MAKING SAME
A surface-modified carbon fiber composition comprising: (i) a carbon fiber having an outer surface, a width of at least 1 micron, and a length-to-width aspect ratio of at least 1000; and (ii) an amine-containing polymer coating bonded to the outer surface of the carbon fiber, wherein the amine-containing polymer contains at least one of primary and secondary amino groups. A method for producing the coated carbon fiber comprises: immersing an uncoated carbon fiber in an electrolyte solution containing a dissolved amount of an amine-containing polymer containing at least one of primary and secondary amino groups while the uncoated carbon fiber is connected to a negatively charged electrode and positioned adjacent to a positively charged electrode in the electrolyte solution to result in the electrodeposition of a coating of the amine-containing polymer on the uncoated carbon fiber. Also described herein are carbon fiber-polymer composites and methods of producing them.
Method of printed circuit board dielectric molding and electrolytic metallization
A method of manufacturing a printed circuit board (PCB) includes forming a tridimensional (3D) dielectric substrate on a fiber-reinforced polymer with opposite sides; forming each side with channels and pockets by molding dielectric laminate, and the channels and pockets define a layout for conductive traces and pads of the PCB; forming the channels and pockets in a same side of the 3D dielectric substrate at a uniform depth; forming side walls of the channels and pockets of the 3D dielectric substrate with a draft angle in a range of greater than 0 degrees to about 5 degrees; depositing by electrolytic metallization the conductive traces and pads into the channels and pockets of the 3D dielectric substrate; and the outer surface of those conductive traces and pads are flush with the sides of the 3D dielectric substrate.