The invention relates to a method for depositing a metal M1 onto a carbon layer, as well as to a method for manufacturing an electrode for fuel cells and to a method for manufacturing a fuel cell. The method for depositing a metal M1 onto a porous carbon layer according to the invention includes a step of depositing said metal M1 by means of the electrochemical reduction of an electrolytic solution of a salt of the metal M1, and, prior to said step of depositing the metal M1 by means of electrochemical reduction, a step of depositing a metal M2 by means of chemical reduction using a reducing gas of a salt of the metal M2, the thermodynamic equilibrium potential between the ionic form of the salt of M2 and M2, E.sup.eq.sub.ionic form of the salt of M2/M2 being greater than the thermodynamic equilibrium potential between the ionic form of the salt of M1 and M1, E.sup.eq.sub.ionic form of the salt of M1/M1. The invention can be used, in particular, in the field of fuel cells.

The invention relates to a method for depositing a metal M1 onto a carbon layer, as well as to a method for manufacturing an electrode for fuel cells and to a method for manufacturing a fuel cell. The method for depositing a metal M1 onto a porous carbon layer according to the invention includes a step of depositing said metal M1 by means of the electrochemical reduction of an electrolytic solution of a salt of the metal M1, and, prior to said step of depositing the metal M1 by means of electrochemical reduction, a step of depositing a metal M2 by means of chemical reduction using a reducing gas of a salt of the metal M2, the thermodynamic equilibrium potential between the ionic form of the salt of M2 and M2, E.sup.eq.sub.ionic form of the salt of M2/M2 being greater than the thermodynamic equilibrium potential between the ionic form of the salt of M1 and M1, E.sup.eq.sub.ionic form of the salt of M1/M1. The invention can be used, in particular, in the field of fuel cells.

An electrochemical plating apparatus for depositing a conductive material on a wafer includes a cell chamber. The plating solution is provided from a bottom of the cell chamber into the cell chamber. A plurality of openings passes through a sidewall of the cell chamber. A flow regulator is arranged with each of the plurality of openings configured to regulate an overflow amount of the plating solution flowing out through the each of the plurality of openings. The electrochemical plating apparatus further comprises a controller to control the flow regulator such that overflow amounts of the plating solution flowing out through the plurality of openings are substantially equal to each other.

An electrochemical plating apparatus for depositing a conductive material on a wafer includes a cell chamber. The plating solution is provided from a bottom of the cell chamber into the cell chamber. A plurality of openings passes through a sidewall of the cell chamber. A flow regulator is arranged with each of the plurality of openings configured to regulate an overflow amount of the plating solution flowing out through the each of the plurality of openings. The electrochemical plating apparatus further comprises a controller to control the flow regulator such that overflow amounts of the plating solution flowing out through the plurality of openings are substantially equal to each other.

A method of coating an electroplating rack used for supporting non-conductive substrates during a plating process. The method comprises the steps of contacting at least a portion of the electroplating rack with a plastisol composition, the plastisol composition having dispersed therein an effective amount of an additive; and heating the electroplating rack with the plastisol composition thereon to a suitable temperature and for a sufficient time to cure the plastisol and form a solid insulating coating on the electroplating rack. The coated electroplating rack may then be used for mounting non-conductive substrates for subsequent metallization steps.

In a film forming method, in a state where a metal solution is sealed in a first accommodation chamber of a housing with a solid electrolyte membrane and a fluid is sealed in a second accommodation chamber of a placing table with a thin film, a substrate is placed on the placing table and the placing table and the housing are moved relative to each other to cause the substrate to be interposed between the solid electrolyte membrane and the thin film, the solid electrolyte membrane and the thin film are pressed against the substrate interposed therebetween to cause the solid electrolyte membrane and the thin film to conform to a surface and a rear surface of the substrate, thereby forming a metal film.

The present invention relates to a method for preventing the metallization of a support of at least one plastic part subjected to a metallization process, comprising the successive stages of oxidation of the surface of said part, of activation of the oxidized surface and of chemical and/or electrochemical deposition of metal on the activated surface, characterized in that it comprises a stage in which said support, before said oxidation stage, is brought into contact with an inhibiting solution comprising at least one specific metallization inhibitor. The invention also relates to a process for the selective metallization of a plastic part combined with a support, comprising bringing said part into contact with said inhibiting solution.

Method and apparatus for producing metal-coated optical fiber involves feeding a length of glass fiber through a first solution bath so as to plate a first predetermined metal on the glass fiber via electroless deposition. The length of glass fiber is passed continuously from the first solution bath to a second solution bath adapted to plate thereon a second predetermined metal via electrolytic plating such that the optical fiber contacts an electrode only after at least some of the second predetermined metal has been applied. The length of glass fiber may be passed continuously from the second solution bath to a third solution bath adapted to plate thereon a third predetermined metal via electrolytic plating.

Methods of metalizing vias within a substrate are disclosed. In one embodiment, a method of metalizing vias includes disposing a substrate onto a growth substrate. The substrate includes a first surface, a second surface, and at least one via. The first surface or the second surface of the substrate directly contacts a surface of the growth substrate, and the surface of the growth substrate is electrically conductive. The method further includes applying an electrolyte to the substrate such that the electrolyte is disposed within the at least one via. The electrolyte includes metal ions of a metal to be deposited within the at least one via. The method also includes positioning an electrode within the electrolyte, and applying a current and/or a voltage between the electrode and the substrate, thereby reducing the metal ions into the metal on the surface of the growth substrate within the at least one via.

In described examples, a transient liquid phase (TLP) metal bonding material includes a first substrate and a base metal layer. The base metal layer is disposed over at least a portion of the first substrate. The base metal has a surface roughness (Ra) of between about 0.001 to 500 nm. Also, the TLP metal bonding material includes a first terminal metal layer that forms an external surface of the TLP metal bonding material. A metal fuse layer is positioned between the base metal layer and the first terminal metal layer. The TLP metal bonding material is stable at room temperature for at least a predetermined period of time.