An electrolytic copper foil having higher electrical conductivity, and a method for producing the same are provided. The electrolytic copper foil has a carbon content of 5 ppm or less, a sulfur content of 3 ppm or less, an oxygen content of 5 ppm or less, and a nitrogen content of 0.5 ppm or less; has a total content of carbon, sulfur, oxygen, nitrogen, and hydrogen of 15 ppm or less; and has a number of grains of 8.0 to 12.0/?m.sup.2, the number of grains changing to 0.6 to 1.0/?m.sup.2 by heating the electrolytic copper foil at 150? C. for 1 hour. A method for producing this electrolytic copper foil includes cleaning a copper raw material; dissolving the copper raw material after the cleaning to obtain an electrolytic solution having a total organic carbon of 10 ppm or less; and electrolyzing the electrolytic solution to obtain the electrolytic copper foil.

A floating metallized element assembly and method of manufacturing thereof are disclosed. The floating metallized element assembly includes a work piece of a plateable resin and a non-plateable resin including a front side and a back side. The work piece includes at least one plated decorative region on the plateable resin at the front side. The work piece also includes at least one network of the plateable resin at the back side. The work piece additionally includes a plurality of discrete current paths of the plateable resin extending from the at least one network to the at least one plated decorative region. The work piece also includes at least one non-plated decorative region of the non-plateable resin adjacent the at least one decorative region. Metal surfaces are adhered to and disposed on the at least one plated decorative region.

A metal foil that has a carrier and a preparation method thereof. The metal foil with a carrier comprises a carrier layer, a barrier layer, a striping layer, and a metal foil layer. The carrier layer, the barrier layer, the striping lay, and the metal foil layer are sequentially stacked, or the carrier layer, the striping layer, the barrier layer, and the metal foil layer are sequentially stacked. The diffusion depth of the carrier layer to the metal foil layer is less than or equal to 3 m and the diffusion depth of the metal foil layer toward the carrier layer is less than or equal to 3 m at a temperature of 20-400 C. By setting the barrier layer, the carrier layer and the metal foil layer are prevented from diffusing mutually to cause bonding at a high temperature, so that the carrier layer and the metal foil layer are easy to peel off.

Certain embodiments are described herein of coatings and articles comprising coatings. In some examples, the coating comprises a textured layer comprising at least one metal or metallic compound. The coating may also comprise a plurality of individual surface features in a micro- or nano-structure size range, wherein the plurality of surface features are positioned in different planes in different heights with respect to a reference zero point in the textured layer. In some instances, there is substantially no space between the plurality of surface features of the textured layer. Methods of producing the coatings are also described.

An electrochemical additive manufacturing method includes positioning a cathode portion of a build plate and a deposition anode array into an electrolyte solution. The method additionally includes transmitting electrical energy from the power source through one or more deposition anodes, through the electrolyte solution, and to the cathode portion such that material is deposited onto the cathode portion. The build plate includes a thermal feature, the deposited material is thermally coupled with the thermal feature, and the deposited material forms a heat wicking feature.

An electrochemical additive manufacturing method includes positioning a cathode portion of a build plate and a deposition anode array into an electrolyte solution. The method additionally includes transmitting electrical energy from the power source through one or more deposition anodes, through the electrolyte solution, and to the cathode portion such that material is deposited onto the cathode portion. The build plate includes a thermal feature, the deposited material is thermally coupled with the thermal feature, and the deposited material forms a heat wicking feature.

The invention relates to a method for manufacturing a three-dimensional item comprising at least one metal pattern, comprising at least: a step A of providing a flat substrate of thermoformable material; a step B of forming on a surface of the flat substrate a temporary masking coating that adheres to said surface, to obtain a masked substrate having at least one unmasked area; a step C of thermoforming the flat substrate to give the latter a generally three-dimensional shape; a step D of metallizing the masked substrate to form a metal deposit on the latter, at least on said unmasked area; and a step E of eliminating said temporary masking coating, the thermoforming step C being carried out before metallization step D and before step E of eliminating said temporary masking coating, the metallization step D being carried out by non-electrolytic deposition from one or more metallization solution(s) containing at least one metal in metal cation form and at least one reducing agent adapted to transform the metal cation into metal, by spraying the metallization solution(s) in the form of one or more aerosol(s).

Method for manufacturing three-dimensional items with metal pattern(s)

Articles including a multi-layer electrical contact and methods for applying the contact to a substrate are described herein. The article may include a substrate on which the multi-layer electrical contact is formed. In some embodiments, the electrical contact includes multiple metallic layers.

In a method of manufacturing a semiconductor device first conductive layers are formed over a substrate. A first photoresist layer is formed over the first conductive layers. The first conductive layers are etched by using the first photoresist layer as an etching mask, to form an island pattern of the first conductive layers separated from a bus bar pattern of the first conductive layers by a ring shape groove. A connection pattern is formed to connect the island pattern and the bus bar pattern. A second photoresist layer is formed over the first conductive layers and the connection pattern. The second photoresist layer includes an opening over the island pattern. Second conductive layers are formed on the island pattern in the opening. The second photoresist layer is removed, and the connection pattern is removed, thereby forming a bump structure.

In a method of manufacturing a semiconductor device first conductive layers are formed over a substrate. A first photoresist layer is formed over the first conductive layers. The first conductive layers are etched by using the first photoresist layer as an etching mask, to form an island pattern of the first conductive layers separated from a bus bar pattern of the first conductive layers by a ring shape groove. A connection pattern is formed to connect the island pattern and the bus bar pattern. A second photoresist layer is formed over the first conductive layers and the connection pattern. The second photoresist layer includes an opening over the island pattern. Second conductive layers are formed on the island pattern in the opening. The second photoresist layer is removed, and the connection pattern is removed, thereby forming a bump structure.