A plating module includes: a plating tank, a substrate holder, and an elevating mechanism. The plating tank is for housing a plating solution. The substrate holder is for holding a substrate with a surface to be plated facing downward. The elevating mechanism is for moving up and down the substrate holder. The substrate holder includes: a supporting mechanism, a floating plate, a floating mechanism, and a pushing mechanism. The supporting mechanism is for supporting an outer peripheral portion of the surface of the substrate. The floating plate is arranged on a back surface side of the substrate. The floating mechanism is for biasing the floating plate to a direction away from a back surface of the substrate. The pushing mechanism is for pressing the floating plate to the back surface of the substrate against a biasing force to the substrate by the floating mechanism.

A cobalt electroplating composition may include (a) cobalt ions; and (b) an ammonium compound of formula (NR.sup.1R.sup.2R.sup.3H.sup.+).sub.nX.sup.n−, wherein R.sup.1, R.sup.2, R.sup.3 are independently H or linear or branched C.sub.1 to C.sub.6 alkyl, X is one or more n valent inorganic or organic counter ion(s), and n is an integer from 1, 2, or 3.

A microelectronic device has bump bond structures on input/output (I/O) pads. The bump bond structures include copper-containing pillars, a barrier layer including cobalt and zinc on the copper-containing pillars, and tin-containing solder on the barrier layer. The barrier layer includes 0.1 weight percent to 50 weight percent cobalt and an amount of zinc equivalent to a layer of pure zinc 0.05 microns to 0.5 microns thick. A lead frame has a copper-containing member with a similar barrier layer in an area for a solder joint. Methods of forming the microelectronic device are disclosed.

The embodiments herein relate to apparatuses and methods for electroplating one or more materials onto a substrate. Embodiments herein utilize a cross flow conduit in the electroplating cell to divert flow of fluid from a region between a substrate and a channeled ionically resistive plate positioned near the substrate down to a level lower than level of fluid in a fluid containment unit for collecting overflow fluid from the plating system for recirculation. The cross flow conduit can include channels cut into components of the plating cell to allow diverted flow, or can include an attachable diversion device mountable to an existing plating cell to divert flow downwards to the fluid containment unit. Embodiments also include a flow restrictor which may be a plate or a pressure relief valve for modulating flow of fluid in the cross flow conduit during plating.

Systems and methods for electroplating are described. The electroplating system may include a vessel configured to hold a first portion of a liquid electrolyte. The system may also include a substrate holder configured for holding a substrate in the vessel. The system may further include a first reservoir in fluid communication with the vessel. In addition, the system may include a second reservoir in fluid communication with the vessel. Furthermore, the system may include a first mechanism configured to expel a second portion of the liquid electrolyte from the first reservoir into the vessel. The system may also include a second mechanism configured to take in a third potion of the liquid electrolyte from the vessel into the second reservoir when the second portion of the liquid electrolyte is expelled from the first reservoir. Methods may include oscillating flow of the electrolyte within the vessel.

Systems and methods for electroplating are described. The electroplating system may include a vessel configured to hold a first portion of a liquid electrolyte. The system may also include a substrate holder configured for holding a substrate in the vessel. The system may further include a first reservoir in fluid communication with the vessel. In addition, the system may include a second reservoir in fluid communication with the vessel. Furthermore, the system may include a first mechanism configured to expel a second portion of the liquid electrolyte from the first reservoir into the vessel. The system may also include a second mechanism configured to take in a third potion of the liquid electrolyte from the vessel into the second reservoir when the second portion of the liquid electrolyte is expelled from the first reservoir. Methods may include oscillating flow of the electrolyte within the vessel.

A plating apparatus includes a workpiece holder, a plating bath, and a clamp ring. The plating bath is underneath the workpiece holder. The clamp ring is connected to the workpiece holder. The clamp ring includes channels communicating an inner surface of the clamp ring and an outer surface of the clamp ring.

A semiconductor apparatus and methods of processing a semiconductor workpiece are provided. The semiconductor apparatus for pre-wetting a semiconductor workpiece includes a process chamber, a workpiece holder disposed within the process chamber to hold the semiconductor workpiece, a pre-wetting fluid tank disposed outside the process chamber and containing a pre-wetting fluid, and a conduit coupled to the pre-wetting fluid tank and extending into the process chamber. The conduit delivers the pre-wetting fluid from the pre-wetting fluid tank out through an outlet of the conduit to wet a major surface of the semiconductor workpiece comprising a plurality of recess portions.

Disclosed herein is a composition including copper ions and at least one additive including a polyalkyleneimine backbone including N-hydrogen atoms, where (a) the polyalkyleneimine backbone has a mass average molecular weight MW of from 600 g/mol to 100 000 g/mol, (b) the N-hydrogen atoms are each substituted by a polyoxyalkylene group including an oxyethylene and a C.sub.3 to C.sub.6 oxyalkylene unit, and (c) the average number of oxyalkylene units in the polyoxyalkylene groups is of from more than 10 to less than 30 per N-hydrogen atom in the polyalkyleneimine.

Disclosed herein is a composition including copper ions and at least one additive including a polyalkyleneimine backbone including N-hydrogen atoms, where (a) the polyalkyleneimine backbone has a mass average molecular weight MW of from 600 g/mol to 100 000 g/mol, (b) the N-hydrogen atoms are each substituted by a polyoxyalkylene group including an oxyethylene and a C.sub.3 to C.sub.6 oxyalkylene unit, and (c) the average number of oxyalkylene units in the polyoxyalkylene groups is of from more than 10 to less than 30 per N-hydrogen atom in the polyalkyleneimine.