Provided is an electrolytic copper foil. The electrolytic copper foil has a drum side and a deposited side, wherein Rz is less than 0.8 m; the electrolytic copper foil has a transverse direction, wherein the electrolytic copper foil is divided into 10 test pieces with the same width and the same length, and each two adjacent ones of the 10 test pieces have a weight deviation therebetween, and a count of the weight deviation(s) greater than or equal to 1.5% is smaller than a count of the weight deviations smaller than 1.5%; wherein n represents any one of the test piece numbers from 1 to 9, and the $\mathrm{weight}\mathrm{deviation}\mathrm{between}\mathrm{each}\mathrm{two}\mathrm{adjacent}\mathrm{ones}\mathrm{of}\mathrm{the}10\mathrm{test}\mathrm{pieces}\left(\%\right)=\frac{\begin{array}{c}.Math.\mathrm{the}\mathrm{weight}\mathrm{of}\end{array}}{}$

Photoactive silicon films may be formed by electrodeposition from a molten salt electrolyte. In an embodiment, SiO.sub.2 is electrochemically reduced in a molten salt bath to deposit silicon on a carbonaceous substrate.

Photoactive silicon films may be formed by electrodeposition from a molten salt electrolyte. In an embodiment, SiO.sub.2 is electrochemically reduced in a molten salt bath to deposit silicon on a carbonaceous substrate.

The present invention is directed towards an electrodepositable coating composition comprising (a) a fluoropolymer; (b) an electrochemically active material and/or electrically conductive agent; (c) a pH-dependent rheology modifier; and (d) an aqueous medium comprising water; wherein water is present in an amount of at least 45% by weight, based on the total weight of the electrodepositable coating composition. Also disclosed herein is a method of coating a substrate, as well as coated substrates and electrical storage devices.

The present invention is directed towards an electrodepositable coating composition comprising (a) a fluoropolymer; (b) an electrochemically active material and/or electrically conductive agent; (c) a pH-dependent rheology modifier; and (d) an aqueous medium comprising water; wherein water is present in an amount of at least 45% by weight, based on the total weight of the electrodepositable coating composition. Also disclosed herein is a method of coating a substrate, as well as coated substrates and electrical storage devices.

An interconnect for a solid oxide fuel cell, its manufacturing method, and a solid oxide fuel cell including the same are provided.

Techniques for electrodepositing selenium (Se)-containing films are provided. In one aspect, a method of preparing a Se electroplating solution is provided. The method includes the following steps. The solution is formed from a mixture of selenium oxide; an acid selected from the group consisting of alkane sulfonic acid, alkene sulfonic acid, aryl sulfonic acid, heterocyclic sulfonic acid, aromatic sulfonic acid and perchloric acid; and a solvent. A pH of the solution is then adjusted to from about 2.0 to about 3.0. The pH of the solution can be adjusted to from about 2.0 to about 3.0 by adding a base (e.g., sodium hydroxide) to the solution. A Se electroplating solution, an electroplating method and a method for fabricating a photovoltaic device are also provided.

Techniques for electrodepositing selenium (Se)-containing films are provided. In one aspect, a method of preparing a Se electroplating solution is provided. The method includes the following steps. The solution is formed from a mixture of selenium oxide; an acid selected from the group consisting of alkane sulfonic acid, alkene sulfonic acid, aryl sulfonic acid, heterocyclic sulfonic acid, aromatic sulfonic acid and perchloric acid; and a solvent. A pH of the solution is then adjusted to from about 2.0 to about 3.0. The pH of the solution can be adjusted to from about 2.0 to about 3.0 by adding a base (e.g., sodium hydroxide) to the solution. A Se electroplating solution, an electroplating method and a method for fabricating a photovoltaic device are also provided.

A method for forming a coating layer on a metal base material for a semiconductor reactor according to an aspect of the present invention comprises the steps of: immersing a metal base material for a semiconductor reactor in an aqueous alkaline electrolyte solution containing NaOH and NaAlO.sub.2; and connecting an electrode to the metal base material and supplying power to the electrode to form a coating layer on the metal base material through a plasma electrolytic oxidation (PEO) method.

A method for forming a coating layer on a metal base material for a semiconductor reactor according to an aspect of the present invention comprises the steps of: immersing a metal base material for a semiconductor reactor in an aqueous alkaline electrolyte solution containing NaOH and NaAlO.sub.2; and connecting an electrode to the metal base material and supplying power to the electrode to form a coating layer on the metal base material through a plasma electrolytic oxidation (PEO) method.