The present disclosure relates to the technical field of photocatalysis/electrocatalysis, and in particular to a non-metallic high-entropy compound, and a preparation method and use thereof. In the present disclosure, the non-metallic high-entropy compound includes at least five non-metallic elements, where each of the at least five non-metallic elements has a molar proportion of 0.1% to 99.0%, and a total atomic proportion of the at least five non-metallic elements are 100%. The non-metallic high-entropy compound has a controllable band gap, an adjustable conductivity, and a desirable surface activity, and shows a catalytic reaction activity for hydrogen production by high-efficiency photocatalytic/electrocatalytic water splitting, carbon dioxide reduction, or organic pollutant degradation. Moreover, synthetic raw materials are all non-metals, which are cheap and easily available, while a synthesis process is simple and easy to implement.

A method for producing a wear and corrosion resistant WC based material coated with one or more metals selected from group IVB, VB and VIB metals (according to CAS system) and Al is disclosed. The method comprises treating of said coated structure with electrochemical boriding treatment in an electrolyte which is substantially free of halogenated compounds wherein the electrolyte comprises alkali carbonates and boron sources and said electrolyte being heated during electrolysis under an induction heating regime having electromagnetic frequency ranging from 50 to 300 kHz during electrolysis.

A method for producing a wear and corrosion resistant WC based material coated with one or more metals selected from group IVB, VB and VIB metals (according to CAS system) and Al is disclosed. The method comprises treating of said coated structure with electrochemical boriding treatment in an electrolyte which is substantially free of halogenated compounds wherein the electrolyte comprises alkali carbonates and boron sources and said electrolyte being heated during electrolysis under an induction heating regime having electromagnetic frequency ranging from 50 to 300 kHz during electrolysis.

EC film stacks and different layers within the EC film stacks arc disclosed. Methods of manufacturing these layers are also disclosed. In one embodiment, an EC layer comprises nanostructured EC layer. These layers may be manufactured by various methods, including, including, but not limited to glancing angle deposition, oblique angle deposition, electrophoresis, electrolyte deposition, and atomic layer deposition. The nanostructured EC layers have a high specific surface area, improved response times, and higher color efficiency.

EC film stacks and different layers within the EC film stacks arc disclosed. Methods of manufacturing these layers are also disclosed. In one embodiment, an EC layer comprises nanostructured EC layer. These layers may be manufactured by various methods, including, including, but not limited to glancing angle deposition, oblique angle deposition, electrophoresis, electrolyte deposition, and atomic layer deposition. The nanostructured EC layers have a high specific surface area, improved response times, and higher color efficiency.

The present invention relates to a sensor element for detecting hydrogen chloride (HCl) gas, a sensor device having the sensor element, and a method of manufacturing the sensor element, wherein s the sensor element includes: an ionic layer including a Ag ion obtained through ionization; an ion conductive layer, in which the Ag ion is conducted, the ion conductive layer being formed on the ionic layer; and a reactive layer, in which the Ag ion conducted from the ion conductive layer and HCl gas react with each other, the reactive layer being formed on the ion conductive layer. The sensor element detects HCl gas generated from insulting materials when fire occurs, thereby detecting an electrical fire and preventing gas and fire spreading.

The present invention relates to a sensor element for detecting hydrogen chloride (HCl) gas, a sensor device having the sensor element, and a method of manufacturing the sensor element, wherein s the sensor element includes: an ionic layer including a Ag ion obtained through ionization; an ion conductive layer, in which the Ag ion is conducted, the ion conductive layer being formed on the ionic layer; and a reactive layer, in which the Ag ion conducted from the ion conductive layer and HCl gas react with each other, the reactive layer being formed on the ion conductive layer. The sensor element detects HCl gas generated from insulting materials when fire occurs, thereby detecting an electrical fire and preventing gas and fire spreading.

The present invention relates to a thermochemical gas sensor including a substrate provided with an insulating layer; a seed layer provided on the insulating layer; a thermoelectric thin film provided on the seed layer; an electrode provided on the thermoelectric thin film; a catalyst layer provided on the electrode and causing exothermic reaction when in contact with gas to be sensed; and an electrode wire electrically connected to the electrode, wherein the thermoelectric thin film is formed of a material including a chalcogenide, wherein the chalcogenide includes one or more chalcogens selected from the group consisting of selenium (Se) and tellurium (Te). The thermochemical gas sensor according to the present invention can be miniaturized and sense gases at various concentrations due to being based on a thermoelectric thin film, does not undergo physical/chemical changes, such as phase change of a thermoelectric thin film, even if repeatedly exposed to gas, and can sense various desired gas types using changes in a catalyst reacting selectively with gases to be sensed.

Provided are a neural electrode for measuring a neural signal, and a method for manufacturing the same. The method for manufacturing the same includes forming an ITO electrode on a substrate, forming a passivation layer for exposing a portion of the ITO electrode, forming ITO nanowires on the ITO electrode, and forming a metal oxide on the ITO nanowires.

Provided are a neural electrode for measuring a neural signal, and a method for manufacturing the same. The method for manufacturing the same includes forming an ITO electrode on a substrate, forming a passivation layer for exposing a portion of the ITO electrode, forming ITO nanowires on the ITO electrode, and forming a metal oxide on the ITO nanowires.