Patent classifications
C25D13/02
Composite Layers, Methods for Their Manufacture and Uses Thereof
A composite layer of carbon nanotubes and metal such as copper is formed by electrodeposition. The layer has a thickness of at least 10 m. The carbon nanotubes are distributed through the layer and are present in the layer at a volume fraction of at least 0.001 vol % and at most 65 vol %. The volume fraction is based on the total volume of the metal and carbon nanotubes and not including any pore volume. The carbon nanotubes are substantially uniformly plated with the metal. The composite layer has a density ratio satisfying Player Pmetal 0.35 where player is the bulk density of the composite layer of thickness of at least 10 m, including any voids that are present in the composite layer and pmetal is the volumetric mass density material property of the metal. The composite layer is of use in evaporation-condensation apparatus, as an active material layer in an electrochemical device or in an electroforming process.
Composite Layers, Methods for Their Manufacture and Uses Thereof
A composite layer of carbon nanotubes and metal such as copper is formed by electrodeposition. The layer has a thickness of at least 10 m. The carbon nanotubes are distributed through the layer and are present in the layer at a volume fraction of at least 0.001 vol % and at most 65 vol %. The volume fraction is based on the total volume of the metal and carbon nanotubes and not including any pore volume. The carbon nanotubes are substantially uniformly plated with the metal. The composite layer has a density ratio satisfying Player Pmetal 0.35 where player is the bulk density of the composite layer of thickness of at least 10 m, including any voids that are present in the composite layer and pmetal is the volumetric mass density material property of the metal. The composite layer is of use in evaporation-condensation apparatus, as an active material layer in an electrochemical device or in an electroforming process.
ADDITIVE MANUFACTURING OF MICROANALYTICAL REFERENCE MATERIALS
A method includes acquiring particles doped with at least one analyte and forming a monolithic reference material. The method includes forming includes using the analyte-doped particles as feedstock particles in an additive manufacturing process. A product includes a monolithic reference material formed of Stober particles doped with a trace element. A method includes acquiring particles doped with platinum group elements (PGEs). The method includes forming a monolithic reference material using the PGE-doped particles as feedstock particles in an additive manufacturing process.
ADDITIVE MANUFACTURING OF MICROANALYTICAL REFERENCE MATERIALS
A method includes acquiring particles doped with at least one analyte and forming a monolithic reference material. The method includes forming includes using the analyte-doped particles as feedstock particles in an additive manufacturing process. A product includes a monolithic reference material formed of Stober particles doped with a trace element. A method includes acquiring particles doped with platinum group elements (PGEs). The method includes forming a monolithic reference material using the PGE-doped particles as feedstock particles in an additive manufacturing process.
Method of manufacturing a complex product by an additive process
A method of producing a complex product includes designing a three dimensional preform of the complex product, creating a three dimensional preform of the complex product using the model, depositing a material on the preform, and removing the preform to complete the complex product. In one embodiment the system provides a complex heat sink that can be used in heat dissipation in power electronics, light emitting diodes, and microchips.
Method of manufacturing a complex product by an additive process
A method of producing a complex product includes designing a three dimensional preform of the complex product, creating a three dimensional preform of the complex product using the model, depositing a material on the preform, and removing the preform to complete the complex product. In one embodiment the system provides a complex heat sink that can be used in heat dissipation in power electronics, light emitting diodes, and microchips.
PROCESSES, SYSTEMS, AND APPARATUS FOR CYCLOTRON PRODUCTION OF TECHNETIUM-99M
A system for producing technetium-99m from molybdate-100. The system comprises: a target capsule apparatus for housing a Mo-100-coated target plate; a target capsule pickup apparatus for engaging and delivering the target cell apparatus into a target station apparatus; a target station apparatus for receiving and mounting therein the target capsule apparatus. The target station apparatus is engaged with a cyclotron for irradiating the Mo-100-coated target plate with protons. The irradiated target capsule apparatus is transferred to a receiving cell apparatus comprising a dissolution/purification module for receiving therein a proton-irradiated Mo-100-coated target plate. A conveyance conduit infrastructure interconnects: (i) the target capsule pickup apparatus with the target station apparatus, (ii) the target station apparatus and the receiving cell apparatus; and (iii) the receiving cell apparatus and the dissolution/purification module.
PROCESSES, SYSTEMS, AND APPARATUS FOR CYCLOTRON PRODUCTION OF TECHNETIUM-99M
A system for producing technetium-99m from molybdate-100. The system comprises: a target capsule apparatus for housing a Mo-100-coated target plate; a target capsule pickup apparatus for engaging and delivering the target cell apparatus into a target station apparatus; a target station apparatus for receiving and mounting therein the target capsule apparatus. The target station apparatus is engaged with a cyclotron for irradiating the Mo-100-coated target plate with protons. The irradiated target capsule apparatus is transferred to a receiving cell apparatus comprising a dissolution/purification module for receiving therein a proton-irradiated Mo-100-coated target plate. A conveyance conduit infrastructure interconnects: (i) the target capsule pickup apparatus with the target station apparatus, (ii) the target station apparatus and the receiving cell apparatus; and (iii) the receiving cell apparatus and the dissolution/purification module.
SPACECRAFT, COATING AND METHOD
A spacecraft, for example a satellite, or a part thereof having a coating comprising a 2D material on an outer surface thereof is described. The 2D material comprises one or more elements, excluding C, N and S, in an amount of at least 50 at. %; and respective oxides of the one or more elements of the 2D material have a vapour pressure of at most 10 Pa at a temperature of 323 K.
SPACECRAFT, COATING AND METHOD
A spacecraft, for example a satellite, or a part thereof having a coating comprising a 2D material on an outer surface thereof is described. The 2D material comprises one or more elements, excluding C, N and S, in an amount of at least 50 at. %; and respective oxides of the one or more elements of the 2D material have a vapour pressure of at most 10 Pa at a temperature of 323 K.