An electrochemical plating apparatus for depositing a conductive material on a wafer includes a cell chamber. The plating solution is provided from a bottom of the cell chamber into the cell chamber. A plurality of openings passes through a sidewall of the cell chamber. A flow regulator is arranged with each of the plurality of openings configured to regulate an overflow amount of the plating solution flowing out through the each of the plurality of openings. The electrochemical plating apparatus further comprises a controller to control the flow regulator such that overflow amounts of the plating solution flowing out through the plurality of openings are substantially equal to each other.

An apparatus for electroplating includes a cup configured to support a substrate, and a cone including at least three distance measuring devices arranged on a lower surface thereof and facing the substrate. Each distance measuring device is configured to transmit a laser pulse towards the substrate, the laser pulse impinging the substrate, receive a reflected laser pulse from the substrate, calculate a turnaround time of the laser pulse, and calculate a distance between the distance measuring device and the substrate using the turnaround time for determining an inclination of the substrate.

A device for measuring electrical properties of electrical contacts within an electroplating apparatus has a disc-shaped structure like that of a wafer. Multiple conductive pads are formed to collectively circumscribe an outer periphery of the disc-shaped structure. Adjacently positioned ones of the conductive pads are electrically isolated from each other. The device includes a current source that supplies electric current at a first terminal and sinks electric current at a second terminal. The device includes measurement circuitry, having first and second input terminals, that determines a value of an electrical parameter based on signals present at the first and second input terminals. The device includes switching circuitry for connecting selected ones of the conductive pads to the first and second terminals of the current source and to the first and second input terminals of the measurement circuitry at a given time. The device also includes an onboard power supply.

Provided is a technique for appropriately handling a substrate holder depending on a use state of the substrate holder. The substrate holder for holding a substrate that is a plating target in a plating apparatus is suggested. The substrate holder includes an RFID tag, and the RFID tag includes a storage region in which a use attribute is stored, the use attribute including an attribute indicating a state of being used for plating processing.

Methods and apparatus for detecting the presence or absence of unwanted metal deposits on a substrate holder of an electroplating apparatus are described herein. In various embodiments, a plating sensor is used to detect unwanted metal deposits. The plating sensor may be mounted relatively far away from the area that it measures (e.g., the sensor target area). For instance, the plating sensor may be on one side of the electroplating apparatus (in some cases mounted on a drip shield), and the sensor target area may be on the opposite side of the electroplating apparatus. In this way, the plating sensor can measure across the electroplating apparatus. This placement provides a relatively deep depth of focus for the plating sensor, and provides some physical separation between the plating sensor and the electroplating chemistry. Both of these factors lead to more reliable detection results.

There are provided a plating apparatus and a plating method enabling continuous operation even while a stocker is taken out of the plating apparatus. The plating apparatus includes a plating treatment section performing plating on a substrate and a plurality of stockers configured to be able to store a holder configured to hold a substrate or an anode. At least one of the plurality of stockers is configured to be movable into and out of the plating apparatus.

Disclosed herein are methods and apparatuses for electroplating which employ seed layer detection. Such methods and related apparatuses may operate by selecting a wafer for processing, measuring from its surface one or more in-process color signals having one or more color components, calculating one or more metrics, each metric indicative of the difference between one of the in-process color signals and a corresponding set of reference color signals, determining whether an acceptable seed layer is present on the wafer surface based on whether a predetermined number of the one or more metrics are within an associated predetermined range which individually corresponds to that metric, and either electroplating the wafer when an acceptable seed layer is present or otherwise designating the wafer unacceptable for electroplating. The foregoing may then be repeated for one or more additional wafers to electroplate multiple wafers from a set of wafers.

Techniques for performing bath metrology on electroplating mixtures are disclosed. In particular, the disclosed techniques can be used in conjection with traditional metrology methods such as cyclic voltammatric stripping (CVS), and are capable of detecting changes in bath components at a more sensitive level than CVS in some circumstances. In some instances, deviations in observed current values from potentiostatic methods vis-à-vis a calibration standard can provide indications of changes in the mixture, and provide an indicator when a depleted component has been sufficiently added to restore the mixture to a previous state.

There is provided a contact structure, comprising a substrate contact including a first contact portion that is located on a leading end side of the substrate contact and that comes into contact with a substrate and a second contact portion that is located nearer to a base end side of the substrate contact than the first contact portion; a seal member configured to cover a periphery of the substrate contact and to have a sealing surface that comes into contact with the substrate to seal the substrate contact; a first pressing portion configured to elastically apply a contact pressure on the substrate to the substrate contact; and a second pressing portion configured to come into contact with the seal member and to apply a contact pressure on the substrate to the seal member independently of the first pressing portion, wherein the first contact portion adheres to the seal member, and the second contact portion is fit in the seal member to be displaceable relative to the seal member.

Various embodiments herein relate to methods and apparatus for electroplating cobalt on a substrate. In many cases, the cobalt is electroplated into recessed features. The recessed features may include a seed layer such as a cobalt seed layer. Electroplating may occur through a bottom-up mechanism. The bottom-up mechanism may be achieved by using particular additives (e.g., accelerator and suppressor), which may be present in the electrolyte at particular concentrations. Further, leveler, wetting agent, and/or brightening agents may be used to promote high quality plating results. In various embodiments, the substrate is pre-treated to remove oxide (and in some cases carbon impurities) from the seed layer before electroplating takes place. Further, the electrolyte may have a particular conductivity to promote uniform plating results across the face of the substrate.