Apparatus and methods for electroplating metal onto substrates are disclosed. The electroplating apparatus comprise an electroplating cell and at least one oxidization device. The electroplating cell comprises a cathode chamber and an anode chamber separated by a porous barrier that allows metal cations to pass through but prevents organic particles from crossing. The oxidation device (ODD) is configured to oxidize cations of the metal to be electroplated onto the substrate, which cations are present in the anolyte during electroplating. In some embodiments, the ODD is implemented as a carbon anode that removes Cu(I) from the anolyte electrochemically. In other embodiments, the ODD is implemented as an oxygenation device (OGD) or an impressed current cathodic protection anode (ICCP anode), both of which increase oxygen concentration in anolyte solutions. Methods for efficient electroplating are also disclosed.

The uniformity of electroplating a metal (e.g., copper) on a semiconductor wafer is improved by using an electroplating apparatus having a flow-shaping element positioned in the proximity of the semiconductor wafer, wherein the flow-shaping element is made of a resistive material and has two types of non-communicating channels made through the resistive material, such that the electrolyte is transported towards the substrate through both types of channels. The first type of channels is not perpendicular to the plane defined by a plating face of the substrate. The second type of channels is perpendicular to the plane defined by the plating face of the substrate. The channels of the first and second type are substantially spatially segregated. In one embodiment a plurality of channels of the first type are located in the central portion of the flow-shaping element and are surrounded by a plurality of channels of the second type.

A substrate holder for vertical galvanic metal deposition on a substrate, comprising a first substrate holder part and a second substrate holder part, wherein both said parts comprise an inner metal comprising part and an outer non-metallic part in which the substrate holder further comprises a hanging element in each substrate holder part, a first sealing element in each substrate holder part, a second sealing element between the inner metal comprising part and the outer non-metallic part of the substrate holder, a fastening system for detachably fastening both substrate holder parts to each other, a first contact element in each substrate holder part for forwarding current from an outer source through the hanging element to the at least second contact element, and a second contact element in each substrate holder part for forwarding current from the at least first contact element to the substrate to be treated.

To provide a substrate holder having a new positioning structure, which does not use a plate spring, and a plating apparatus using this substrate holder. A substrate holder is provided. This substrate holder has a first holding member having a first surface configured to contact with a substrate, and a second holding member for sandwiching and holding the substrate together with the first holding member. The first holding member has a positioning member for positioning the substrate in contact with the first surface at a prescribed position of the first surface. The positioning member is configured to move between a first position where the substrate is to be positioned at the prescribed position of the first surface, in contact with a peripheral edge part of the substrate, and a second position not in contact with the substrate. The second holding member has a driving member configured to cause the positioning member to be positioned at the first position, at the time when holding the substrate by the first holding member and the second holding member.

A metal plating apparatus includes a chemical bath chamber, an anode disposed at a bottom portion of the chemical bath chamber, and a cathode disposed at a top portion of the chemical bath chamber. A solenoid coil is disposed within the chemical bath chamber between the anode and the cathode. The solenoid coil is arranged to apply a magnetic field during a metal plating process in a direction from the anode to the cathode.

A system and method for fabricating a photovoltaic structure is provided. During fabrication, the system can apply a wax coating on at least one surface of a multilayer photovoltaic structure, the surface of the multilayer photovoltaic structure being electrically conductive. The system can then pattern the wax coating using one or more laser beams. The patterned wax coating includes a plurality of openings that expose portions of the electrically conductive surface of the multilayer photovoltaic structure.

Disclosed herein are electroplating systems for forming a layer of metal on a wafer which include an electroplating module and a wafer edge imaging system. The electroplating module may include a cell for containing an anode and an electroplating solution during electroplating, and a wafer holder for holding the wafer in the electroplating solution and rotating the wafer during electroplating. The wafer edge imaging system may include a wafer holder for holding and rotating the wafer through different azimuthal orientations, a camera oriented for obtaining multiple azimuthally separated images of a process edge of the wafer while it is held and rotated (the process edge corresponding to the outer edge of the layer of metal formed on the wafer), and image analysis logic for determining an edge exclusion distance, wherein the edge exclusion distance is a distance between the wafer's edge and the process edge.

Provided are an apparatus for and a method of processing a substrate. The substrate processing apparatus includes a substrate processing unit to process a substrate using a processing solution containing a mixture of first and second sources; a source supplying part to supply the first and second sources to the substrate processing unit; at least one analyzer to measure a concentration of the second source in the processing solution or a pH value of the processing solution and adjust a measurement reference value of the second source in the processing solution using a standard solution, in which the first and second sources are mixed to have a predetermined concentration or pH value; and a standard solution supplying part to prepare the standard solution using the first and second sources to be supplied from the source supplying part and to supply the standard solution to the at least one analyzer.

A substrate holder prevents a substrate to be bent or damaged owing to inward declining of a seal lip. The substrate holder with an opening includes a seal, and a seal support which has a seal support surface, and is formed on an outer circumference of the opening. The seal includes a seal body and a seal lip. At least a part of the seal support surface has an inclination angle that allows an inner end of the seal support surface to approach the plane on which the substrate is to be positioned. The inner end of the seal support surface is positioned on an inner side than the seal lip.

In one embodiment of the present disclosure, a method for electrochemical deposition on a workpiece includes (a) obtaining a workpiece including a feature; (b) depositing a first conductive layer in the feature; (c) moving the workpiece to an integrated electrochemical deposition plating tool configured for hydrogen radical H* surface treatment and electrochemical deposition; (d) treating the first conductive layer using a hydrogen radical H* surface treatment in a treatment chamber of the plating tool to produce a treated first conductive layer; and (e) maintaining the workpiece in the same plating tool and depositing a second conductive layer in the feature on the treated first conductive layer in an electrochemical deposition chamber of the plating tool.