An apparatus and method for uniform metallization on substrate are provided, achieving highly uniform metallic film deposition at a rate far greater than a conventional film growth rate in electrolyte solutions. The apparatus includes an immersion bath (3021), at least one set of electrode (3002), a substrate holder (3003), at least one ultra/mega sonic device (3004), a reflection plate (3005), and a rotating actuator (3030). The immersion bath contains at least one metal salt electrolyte (3020). The at least one set of electrode (3002) connects to an independent power supply. The substrate holder (3003) holds at least one substrate and electrically connects with a conductive side of the substrate. The conductive side of the substrate is exposed to face the electrode. The at least one ultra/mega sonic device (3004) and the reflection plate (3005) are disposed parallel for generating ultra/mega sonic standing wave in the immersion bath. The rotating actuator (3030) rotates the substrate holder (3003) along its axis in the standing wave field, so as to result in a uniform overall power intensity distribution across the substrate in an accumulated time.

An electro-processing apparatus has a contact ring including a seal which is able to compensate for electric field distortions created by a notch (or other irregularity) on the wafer or work piece. The shape of the contact ring at the notch is changed, to reduce current crowding at the notch. The change in shape changes the resistance of the current path between a thief electrode and the wafer edge to increase thief electrode current drawn from the region of the notch. As a result, the wafer is plated with a film having more uniform thickness.

An electrochemical plating (ECP) system is provided. The ECP system includes an ECP cell comprising a plating solution for an ECP process, a sensor configured to in situ measure an interface resistance between a plated metal and an electrolyte in the plating solution as the ECP process continues, a plating solution supply system in fluid communication with the ECP cell and configured to supply the plating solution to the ECP cell, and a control system operably coupled to the ECP cell, the sensor and the plating solution supply system. The control system is configured to compare the interface resistance with a threshold resistance and to adjust a composition of the plating solution in response to the interface resistance being below the threshold resistance.

To stably convey a substrate (workpiece) while suppressing the workpiece from bending. A treatment device is provided. This treatment device includes: a conveying part that conveys a workpiece in a state where a flat surface of the workpiece is inclined around a conveying directional axis relative to a horizontal plane; and a treatment part in which at least one of polishing and cleaning is performed on the flat surface of the workpiece, wherein the conveying part has a drive part configured to be brought into physical contact with an end part of the workpiece and apply force in a conveying direction to the workpiece, a first Bernoulli chuck arranged to face the flat surface of the workpiece, and a second Bernoulli chuck arranged to face an end face of an opposite end part to the end part of the workpiece.

Provided are a plating method, an insoluble anode and a plating apparatus capable of reducing consumption of an additive in a plating solution, when plating a substrate including a via or a hole for forming a through electrode. The plating method includes the steps of preparing a substrate including a via or a hole for forming a through electrode, preparing a plating solution tank that is divided, by a diaphragm, into an anode tank in which an insoluble anode is disposed and a cathode tank in which the substrate is disposed, and electroplating the substrate with an anode current density when plating the substrate in the plating solution tank being equal to or more than 0.4 ASD and equal to or less than 1.4 ASD.

In a plating apparatus, a short circuit of a wiring between a rectifier and a plating device is detected without using a substrate in vain. In the plating apparatus that supplies a current from the rectifier to the substrate to plate the substrate, a short circuit detection method includes a step of outputting a current with a predetermined current value from the rectifier, in a state where the substrate and a substrate holder holding the substrate are not electrically connected to the rectifier, a step of acquiring an output voltage value of the rectifier, a step of comparing the output voltage value with a predetermined reference voltage value, and a step of determining that a short circuit occurs in a circuit for connecting the rectifier and the substrate, in a case where the output voltage value is lower than the reference voltage value.

Electroplating systems according to the present technology may include a two-bath electroplating chamber including a separator configured to provide fluid separation between a first bath configured to maintain a catholyte during operation and a second bath configured to maintain an anolyte during operation. The electroplating systems may include a catholyte tank and an anolyte tank fluidly coupled with the two baths of the two-bath electroplating chamber. The electroplating systems may include a first pump configured to provide catholyte from the catholyte tank to the first bath. The electroplating systems may include a second pump configured to provide anolyte from the anolyte tank to the second bath. The electroplating systems may also include an oxygen-delivery apparatus configured to provide an oxygen-containing fluid within the electroplating system.

The embodiments herein relate to apparatuses and methods for electroplating one or more materials onto a substrate. Embodiments herein utilize a cross flow conduit in the electroplating cell to divert flow of fluid from a region between a substrate and a channeled ionically resistive plate positioned near the substrate down to a level lower than level of fluid in a fluid containment unit for collecting overflow fluid from the plating system for recirculation. The cross flow conduit can include channels cut into components of the plating cell to allow diverted flow, or can include an attachable diversion device mountable to an existing plating cell to divert flow downwards to the fluid containment unit. Embodiments also include a flow restrictor which may be a plate or a pressure relief valve for modulating flow of fluid in the cross flow conduit during plating.

A plating membrane includes a support structure extending radially outward from a nozzle that is to direct a flow of a plating solution toward a wafer. The plating membrane also includes a frame, supported by the support structure, having an inner wall that is angled outward from the nozzle. The outward angle of the inner wall relative to the nozzle directs a flow of plating solution from the nozzle in a manner that increases uniformity of the flow of the plating solution toward the wafer, reduces the amount of plating solution that is redirected inward toward the center of the plating membrane, reduces plating material voids in trenches of the wafer (e.g., high aspect ratio trenches), and/or the like.

There is provided a cleaning device that cleans a substrate holder including a first holding member and a second holding member having an opening for exposing a substrate. This cleaning device includes a cleaning bath configured to house the substrate holder, an actuator configured to separate the second holding member from the first holding member, and a cleaning nozzle configured to discharge a cleaning liquid to the substrate holder housed in the cleaning bath. The cleaning nozzle is configured to pass through the opening of the second holding member.