A substrate carrier includes: a carrier body, wherein the carrier body includes at least one carrying surface, and a first conductive sheet is provided on the carrying surface; a cover plate, wherein the cover plate is a frame structure with a hollow interior, the cover plate is opposite to the carrying surface and is detachably fixed on the carrying surface, the shape of the frame structure matches the shape of a substrate to be coated, the cover plate includes an inner side surface facing the carrying surface, and a second conductive sheet is provided on the inner side surface; an elastic connector is provided between the first conductive sheet and the second conductive sheet, and when the substrate to be coated is fixed on the carrying surface, the second conductive sheet is respectively in electrical communication with the conductive film layer and the first conductive sheet via the elastic connector.

Embodiments of the present application provide an electroplating method and an electroplating apparatus. The electroplating method includes: before putting wafers into an electroplating solution to undergo an electroplating process, adding particles into the electroplating solution, and applying ultrasonic waves to the electroplating solution, so as to remove bubbles in the electroplating solution by oscillation; removing the particles in the electroplating solution; and putting the wafers into the electroplating solution to undergo the electroplating process.

Electroplating methods and systems are described that include adding a metal-ion-containing starting solution to a catholyte to increase a metal ion concentration in the catholyte to a first metal ion concentration. The methods and systems further include measuring the metal ion concentration in the catholyte while the metal ions electroplate onto a substrate and the catholyte reaches a second metal ion concentration that is less than the first metal ion concentration. The methods and systems additionally include adding a portion of an anolyte directly to the catholyte when the catholyte reaches the second metal ion concentration. The addition of the portion of the anolyte increases the metal ion concentration in the catholyte to a third metal ion concentration that is greater than or about the first metal ion concentration.

Electroplating processing systems according to the present technology may include a recirculating tank containing a first volume of processing fluid. The recirculating tank may be fluidly coupled with a delivery pump. The systems may include a vessel configured to receive the processing fluid from the pump. The vessel may include an inner chamber and an outer chamber, and the inner chamber may be sized to hold a second volume of processing fluid less than the first volume of processing fluid. A liquid level sensor may be associated with the vessel to provide a liquid level indication in the outer chamber. The systems may include a return line coupled with an outlet of the vessel and coupled with an inlet of the recirculating tank. The systems may also include a return pump fluidly coupled with the return line. The return pump may be electrically coupled with the liquid level sensor.

There is provided a shielding plate that adjusts an electric potential distribution on a substrate near the substrate. According to one embodiment, there is provided a plating apparatus for performing a plating process on the substrate. The plating apparatus includes a substrate holder, the shielding plate, and a moving mechanism. The substrate holder holds the substrate. The shielding plate is disposed adjacent to the substrate holder. The moving mechanism moves the shielding plate in a direction of approaching the substrate holder and a direction away from the substrate holder. The shielding plate is moved to the substrate holder by the moving mechanism to be contactable with the substrate holder.

To partially or locally control a plating film thickness on a polygonal substrate. There is provided a regulation plate for adjusting a current between an anode and the polygonal substrate. This regulation plate includes a main body that has an edge forming a polygonal opening through which the current passes and an attachable/detachable shielding member to shield at least a part of the polygonal opening.

A method of controlling chemical concentration in electrolyte includes measuring the chemical concentration in the electrolyte in a tank, wherein an end of an exhaust pipe is connected to a top of the tank; determining, by a valve moved along a top surface of the tank, a vapor flux through the exhaust pipe based on the measured chemical concentration; rotating, by using a motor connected to a ball screw connected to the valve, the ball screw to move a gate of the valve based on the determined vapor flux; electroplating, using the electrolyte provided by the tank, wafers respectively in a plurality of electroplating cells that are connected to the tank; and recycling the electrolyte to the tank.

One object of this application is to provide an advanced substrate holder including a clamper. A substrate holder for holding a substrate by interposing the substrate between frames is disclosed. The substrate holder includes a front frame, a rear frame, and one or a plurality of clampers. Each of the clampers includes a hook portion including a hook base and a hook main body, and a plate including at least one claw. At least one of the clampers includes the plate including a first claw for a lock and a second claw for a semi-lock.

A method for fabricating a wafer stack. The method includes forming a tantalum-nitride film on a substrate of the wafer stack using physical vapor deposition, forming a tantalum layer on the tantalum-nitride film using physical vapor deposition, and depositing indium on the tantalum layer using electroplating.

Exemplary methods of electroplating may include forming a first mask layer on a semiconductor substrate. The methods may include forming a seed layer overlying the first mask layer. The methods may include forming a second mask layer overlying the seed layer. The methods may include plating an amount of metal on the semiconductor substrate. A portion of the metal may plate over the first mask layer.