Provided is a substrate holding device that inhibits drop in holding accuracy of a substrate. A Bernoulli chucking pad suctions and holds a front surface or a back surface of a substrate S. A position determiner 54 is capable of pushing the substrate S in contact with a side surface 82 of the substrate S, and positioning the suctioned substrate S. A pin 66 enables the position determiner 54 to come in contact with the side surface 82 of the substrate S. The pin 66 brings the position determiner 54 into contact with the side surface 82 of the substrate S, and the position determiner 54 thereby positions the substrate S.

A wafer plating fixture for use in simultaneously electroplating a two substrates. The wafer plating fixture including: an electrically conductive carrier bus; a plurality of contact clips electrically coupled to the carrier bus and configured to hold the two substrates in place and electrically couple the two substrates to the carrier bus; and a non-conductive substrate backer to separate the two substrates coupled to the carrier bus. A method of electroplating a plurality of substrates. The method including: mounting two substrates to be plated onto a wafer plating fixture; mounting the wafer plating fixture on a continuous belt of plating system; dipping the wafer plating fixture with the two substrates held thereon into an electroplating bath; and applying a voltage to the two substrates via the wafer plating fixture.

An electrochemical plating (ECP) system is provided. The ECP system includes an ECP cell comprising a plating solution for an ECP process, a sensor configured to in situ measure an interface resistance between a plated metal and an electrolyte in the plating solution as the ECP process continues, a plating solution supply system in fluid communication with the ECP cell and configured to supply the plating solution to the ECP cell, and a control system operably coupled to the ECP cell, the sensor and the plating solution supply system. The control system is configured to compare the interface resistance with a threshold resistance and to adjust a composition of the plating solution in response to the interface resistance being below the threshold resistance.

There is provided a method of plating comprising: a process of bringing a sealing portion of a seal provided to prevent a contact of a substrate holder that holds a substrate from coming into contact with a plating solution, into contact with pure water; and a process of detecting a leak of the seal, based on presence or absence of a short circuit of a leak detection electrode placed inside of the substrate holder after the sealing portion is brought into contact with the pure water and before the substrate is brought into contact with a chemical solution.

A plating system is provided. The plating system includes an electroplating chamber defining a plating region within which a wafer is plated. The electroplating chamber includes an inlet configured to introduce plating solution into the plating region of the electroplating chamber. The electroplating chamber includes an outlet configured to remove the plating solution from the plating region of the electroplating chamber. The plating system includes a barrier configured to inhibit removal of the plating solution from the plating region.

An electroplating apparatus including an anode and a cathode, a power supply, and a regulating plate is provided. The power supply is electrically connected to the anode and the cathode. The regulating plate is arranged between the anode and the cathode. The regulating plate includes an insulating grid plate and a plurality of magnetic components. The plurality of magnetic components are uniformly and randomly arranged on the insulating grid plate. An electroplating method is also provided.

Provided is an electroplating apparatus including an electroplating tank, an anode and a cathode, a power supply, and a regulating plate. The electroplating tank accommodates electrolyte. Both the anode and the cathode are disposed in the electroplating tank. The power supply is electrically connected to the anode and the cathode. The regulating plate is disposed between the anode and the cathode. The regulating plate includes a plurality of mesh openings and a plurality of metal sheets, and at least part of the metal sheets is electrically connected with the cathode. An electroplating method is also provided.

Provided is a substrate holder and a substrate treatment apparatus capable of positioning a substrate even in a case in which the substrate receives a frictional force and the like from a support surface. A substrate holder 200 according to the present invention includes: a first holding member 300; a second holding member 500 adapted to pinch a substrate W with the first holding member 300; three or more positioning members 360 including contact surfaces 342 that come into contact with side end portions of the substrate W; a first moving member 380 including a plurality of engaging portions 384 that are engaged with the positioning members 360 such that the positioning members 360 with a state in which distances of an ideal axis L and contact surfaces 376 of the positioning members 360 are equal to each other maintained; and a first biasing member 310 adapted to bias the first moving member 380, in which the first moving member 380 delivers a biasing force of the first biasing member 310 to each of the positioning members 360, and the positioning members 360 are biased in a direction in which the contact surfaces 376 approaches the ideal axis L with the delivered biasing force.

The present invention relates to applying at least one ultra/mega sonic device and its reflection plate for forming standing wave in a metallization apparatus to achieve highly uniform metallic film deposition at a rate far greater than conventional film growth rate in electrolyte. In the present invention, the substrate is dynamically controlled so that the position of the substrate passing through the entire acoustic field with different power intensity in each motion cycle. This method guarantees each location of the substrate to receive the same amount of total sonic energy dose over the interval of the process time, and to accumulatively grow a uniform deposition thickness at a rapid rate.

The present disclosure relates to an electroplating system including a first contact detection sensor and a second contact detection sensor disposed at a surface of a cone of the electroplating system. The first contact detection sensor detects a first resistance at a first contact between a substrate to be plated by the electroplating system and a first contact pin, the second contact detection sensor detects a second resistance at a second contact between the substrate and a second contact pin. A controller receives the first resistance and the second resistance, and determines the first contact and the second contact are not properly formed when a difference between the first resistance and the second resistance is not within a first predetermined resistance range, or the first resistance or the second resistance is not within a second predetermined resistance range.