An object is to reduce the field shielding effect of a paddle during plating. There is provided an apparatus for plating that is configured to plate a substrate and comprises a plating tank; an anode placed in the plating tank; a rotation mechanism configured to rotate the substrate in a first direction and in a second direction that is opposite to the first direction; and a control device configured to control the rotation mechanism, such that a time period when the substrate is rotated in the first direction becomes equal to a time period when the substrate is rotated in the second direction or such that a time integrated value of a rotation speed in the first direction becomes equal to a time integrated value of a rotation speed in the second direction.

A plating chuck for holding a substrate during plating processes, wherein the substrate has a notch area (3031) and a patterned region (3032) adjacent to the notch area (3031). The plating chuck comprises a cover plate (3033) configured to cover the notch area (3031) of the substrate to shield the electric field at the notch area (3031) when the substrate is being plated.

Disclosed are cup assemblies for holding, sealing, and providing electrical power to a semiconductor substrate during electroplating which may include a cup bottom element having a main body portion and a moment arm, an elastomeric sealing element disposed on the moment arm, and an electrical contact element disposed on the elastomeric sealing element. The main body portion may be such that it does not substantially flex when a substrate is pressed against the moment arm, and it may be rigidly affixed to another feature of the cup structure. The ratio of the average vertical thickness of the main body portion to that of the moment arm may be greater than about 5. The electrical contact element may have a substantially flat but flexible contact portion disposed upon a substantially horizontal portion of the sealing element. The elastomeric sealing element may be integrated with the cup bottom element during manufacturing.

An apparatus for electroplating includes a cup configured to support a substrate, and a cone including at least three distance measuring devices arranged on a lower surface thereof and facing the substrate. Each distance measuring device is configured to transmit a laser pulse towards the substrate, the laser pulse impinging the substrate, receive a reflected laser pulse from the substrate, calculate a turnaround time of the laser pulse, and calculate a distance between the distance measuring device and the substrate using the turnaround time for determining an inclination of the substrate.

An electrochemical plating apparatus for performing an edge bevel removal process on a wafer includes a cell chamber. The cell chamber includes two or more nozzles located adjacent to the edge of the wafer. A flow regulator is arranged with each of the two or more nozzles, which is configured to regulate an tap width of a deposited film flowing out through the each of the two or more nozzles. The electrochemical plating apparatus further includes a controller to control the flow regulator such that tap width of the deposited film includes a pre-determined surface profile. The two or more nozzles are located in radially or angularly different dispensing positions above the wafer.

A determination is made of a real-time azimuthal position of a notch alignment feature located on a support surface of a substrate holder relative to a fixed reference ray extending perpendicularly away from a rotational axis of the substrate holder as the substrate holder rotates about the rotational axis. A determination is made of an approach initiation azimuthal position of the notch alignment feature relative to the fixed reference ray at which vertical movement of the substrate holder should initiate in order to have the notch alignment feature located at a prescribed azimuthal position relative to the fixed reference ray when the substrate holder reaches a prescribed vertical position. A determination is made of a time delay required to have the notch alignment feature located at the approach initiation azimuthal position. Vertical movement of the substrate holder is initiated in accordance with the determined time delay.

Provided is a technique that allows a removal of air bubbles that remain on an ionically resistive element.

A plating apparatus 1000 includes a plating tank 10 configured to accumulate a plating solution Ps and including an ionically resistive element 12 arranged in the plating tank, a substrate holder 30 arranged above the ionically resistive element and configured to hold a dummy substrate Wfx, a rotation mechanism 40 configured to rotate the substrate holder, and an elevating mechanism 50 configured to elevate the substrate holder. At least one projecting portion is disposed on a lower surface of the dummy substrate. The at least one projecting portion 60 projects downward from the lower surface. The substrate holder includes a ring 31 projecting below an outer peripheral edge of the lower surface of the dummy substrate. The projecting portion has a lower surface positioned below a lower surface of the ring. The plating apparatus is configured to cause the rotation mechanism to rotate the substrate holder in a state where the elevating mechanism moves down the substrate holder to allow the projecting portion of the dummy substrate to be positioned above the ionically resistive element and to be immersed in the plating solution of the plating tank.

Provided is a technique that allows measuring a film thickness of a substrate in a plating process.

A plating apparatus 1000 includes a plating tank 10, a substrate holder 20, a rotation mechanism 30, a plurality of contact members 50, a coil 60, a current sensor 65, and a film thickness measuring device 70. The plurality of contact members 50 are disposed in a substrate holder and arranged in a circumferential direction of the substrate holder. The plurality of contact members 50 contact an outer peripheral edge of a lower surface of a substrate to supply electricity to the substrate in the plating process. The coil 60 generates a current by an electromagnetic induction due to a magnetic field generated by a current flowing into the contact member, the contact member being rotate together with the substrate holder in the plating process. The current sensor 65 detects the current generated in the coil. The film thickness measuring device 70 measures a film thickness of the substrate based on the current detected by the current sensor in the plating process.

Provided is a technique that ensures suppressed invasion of particles generated at a bearing of a rotation mechanism into a plating tank.

A plating apparatus 1000 includes a labyrinth seal member 50. The labyrinth seal member includes an inner labyrinth seal 53 arranged below a bearing 33 to seal the bearing, an outer labyrinth seal 54 arranged outside in a radial direction of the rotation shaft 32 with respect to the inner labyrinth seal, a delivery port 55configured to supply air to an inner seal space 60 formed inside in the radial direction with respect to the inner labyrinth seal, and a suction port 56 configured to suction air in an outer seal space 65 formed outside in the radial direction with respect to the inner labyrinth seal and inside in the radial direction with respect to the outer labyrinth seat

An apparatus and method of adjusting a plating solution are described. Suppressor is added to the plating solution until a comparison to reference data of an RDE potential taken at a first time during a constant current experiment indicates a threshold suppressor concentration is present. The amount of suppressor added to reach the threshold suppressor concentration is used to determine suppressor concentration of the solution. Another amount of suppressor is added to a new plating solution so that the new plating solution has a specific suppressor concentration. The RDE potential or slope of RDE potential change of the new plating concentration with the specific suppressor concentration taken at a second time during another constant current experiment is compared with the reference data to determine the leveler concentration. The suppressor and leveler concentrations of the original plating solution are adjusted before a semiconductor substrate is plated.