Patent classifications
C25D17/002
Systems and methods for copper (I) suppression in electrochemical deposition
Electroplating systems according to the present technology may include a two-bath electroplating chamber including a separator configured to provide fluid separation between a first bath configured to maintain a catholyte during operation and a second bath configured to maintain an anolyte during operation. The electroplating systems may include a catholyte tank and an anolyte tank fluidly coupled with the two baths of the two-bath electroplating chamber. The electroplating systems may include a first pump configured to provide catholyte from the catholyte tank to the first bath. The electroplating systems may include a second pump configured to provide anolyte from the anolyte tank to the second bath. The electroplating systems may also include an oxygen-delivery apparatus configured to provide an oxygen-containing fluid within the electroplating system.
PLATING MEMBRANE
A plating membrane includes a support structure extending radially outward from a nozzle that is to direct a flow of a plating solution toward a wafer. The plating membrane also includes a frame, supported by the support structure, having an inner wall that is angled outward from the nozzle. The outward angle of the inner wall relative to the nozzle directs a flow of plating solution from the nozzle in a manner that increases uniformity of the flow of the plating solution toward the wafer, reduces the amount of plating solution that is redirected inward toward the center of the plating membrane, reduces plating material voids in trenches of the wafer (e.g., high aspect ratio trenches), and/or the like.
PRODUCTION OF LITHIUM VIA ELECTRODEPOSITION
Methods and systems for scalable production of lithium metal through electrodeposition.
PLATING APPARATUS AND OPERATION CONTROL METHOD OF PLATING APPARATUS
A plating apparatus for performing a plating process on a substrate includes a first robot chamber, a plating chamber, a first processing chamber, a second robot chamber, a first door, a second door, and a control module. The first robot chamber houses a first transfer robot for transferring a substrate. The first processing chamber houses a pre-process module. The second robot chamber houses a second transfer robot for transferring a substrate between the pre-process module and the plating module. The first door is arranged between the first robot chamber and the first processing chamber. The second door is arranged between the first processing chamber and the second robot chamber. The control module is configured to control opening and closing of the first door and the second door such that the first door and the second door do not simultaneously open.
ELECTROPLATING SYSTEMS AND METHODS WITH INCREASED METAL ION CONCENTRATIONS
Electroplating methods and systems are described that include adding a metal-ion-containing starting solution to a catholyte to increase a metal ion concentration in the catholyte to a first metal ion concentration. The methods and systems further include measuring the metal ion concentration in the catholyte while the metal ions electroplate onto a substrate and the catholyte reaches a second metal ion concentration that is less than the first metal ion concentration. The methods and systems additionally include adding a portion of an anolyte directly to the catholyte when the catholyte reaches the second metal ion concentration. The addition of the portion of the anolyte increases the metal ion concentration in the catholyte to a third metal ion concentration that is greater than or about the first metal ion concentration.
FILM FORMATION APPARATUS AND FILM FORMATION METHOD FOR FORMING METAL FILM
A film formation apparatus for forming a metal film includes an anode, a solid electrolyte membrane disposed between the anode and a substrate that serves as a cathode, a power supply device that applies a voltage between the anode and the cathode, a solution container that contains a solution between the anode and the solid electrolyte membrane, the solution containing metal ions, and a pressure device that pressurizes the solid electrolyte membrane to the cathode side with a fluid pressure of the solution. The film formation apparatus includes an auxiliary cathode disposed in a peripheral area of the film formation region when the surface of the substrate is viewed in plain view, the auxiliary cathode having an electric potential lower than an electric potential of the anode.
Anode assembly
An anode assembly allowing the anode to be easily pulled up from a plating tank is disclosed. The anode assembly includes: an anode structure; and an anode holder. The anode structure includes: an anode; and a feeding member. The anode holder includes: an anode support frame having a space in which the anode structure is arranged; a conductive bar; and a feeding electrode attached to an end of the conductive bar. One end of the feeding member is fixed to the anode, and the other end of the feeding member is detachably fixed to the conductive bar. The anode support frame has a positioning guide portion into which a lower end of the anode structure is inserted. The anode assembly is configured to allow the anode structure to be separated from the anode holder and pulled up from the plating tank when the feeding member is detached from the conductive bar.
ELECTROPLATING SYSTEM
An electroplating system has a vessel assembly holding an electrolyte. A weir thief electrode assembly in the vessel assembly includes a plenum inside of a weir frame. The plenum divided into at least a first, a second and a third virtual thief electrode segment. A plurality of spaced apart openings through the weir frame lead out of the plenum. A weir ring is attached to the weir frame and guides flow of current during electroplating. The electroplating system provides process determined radial and circumferential current density control and does not require changing hardware components during set up.
PLATING SYSTEM AND METHOD OF PLATING WAFER
A plating system is provided. The plating system includes an electroplating chamber defining a plating region within which a wafer is plated. The electroplating chamber includes an inlet configured to introduce plating solution into the plating region of the electroplating chamber. The electroplating chamber includes an outlet configured to remove the plating solution from the plating region of the electroplating chamber. The plating system includes a barrier configured to inhibit removal of the plating solution from the plating region.
Plating apparatus
A plating apparatus including a thief electrode that can be suitably maintained is provided. The plating apparatus includes a substrate holder holding a substrate, a thief electrode supporter supporting a thief electrode to be disposed outside the substrate, a plating tank configured to immerse the substrate in a plating solution for applying an electroplating treatment, a thief electrode maintenance tank configured to perform maintenance of the thief electrode, and a transport module configured to transport the thief electrode supporter to the plating tank and the thief electrode maintenance tank.