One object of this application is to provide an advanced substrate holder including a clamper. A substrate holder holds a substrate by interposing the substrate between frames. The substrate holder includes a front frame, a rear frame, and one or a plurality of clampers. Each of the clampers includes a hook portion including a hook base and a hook main body, and a plate including at least one claw. At least one of the clampers includes the plate including a first claw for a lock and a second claw for a semi-lock.

The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold between the channeled plate and substrate, and on the sides by a flow confinement ring. A seal may be provided between the bottom surface of a substrate holder and the top surface of an element below the substrate holder (e.g., the flow confinement ring). During plating, the apparatus may switch between a sealed state and an unsealed state, for example by lowering and lifting the substrate and substrate holder as appropriate to engage and disengage the seal. A higher level of applied current or applied voltage may be provided to the substrate when the apparatus is in the sealed state compared to the unsealed state.

The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold between the channeled plate and substrate, and on the sides by a flow confinement ring. A seal may be provided between the bottom surface of a substrate holder and the top surface of an element below the substrate holder (e.g., the flow confinement ring). During plating, fluid enters the cross flow manifold through channels in the channeled plate, and through a cross flow inlet, then exits at the cross flow exit, positioned opposite the cross flow inlet. The apparatus may switch between a sealed state and an unsealed state during electroplating, for example by lowering and lifting the substrate and substrate holder as appropriate to engage and disengage the seal.

Method and apparatus are provided for electroplating a surface area of an internal wall defining a cooling cavity present in a gas turbine engine component.

Sequential electrodeposition of metals into through-mask features on a semiconductor substrate is conducted such as to reduce the deleterious consequences of lipseal's pressure onto the mask material. In a first electroplating step, a first metal (e.g., nickel) is electrodeposited using a lipseal that has an innermost point of contact with the semiconductor substrate at a first distance from the edge of the substrate. In a second electroplating step, a second metal (e.g., tin) is electrodeposited using a lipseal that has an innermost point of contact with the semiconductor substrate at a greater distance from the edge of the substrate than the first distance. This allows to at least partially shift the lipseal pressure from a point that could have been damaged during the first electrodeposition step and to shield from electrolyte any cracks that might have formed in the mask material during the first electroplating step.

Provided is a wetting method for substrate that allows reducing an amount of air bubbles attached to a surface to be plated with a simple structure.

The wetting method for substrate includes a holding step 102 of holding a back surface of a substrate with a back plate such that a surface to be plated of the substrate is opposed to a liquid surface of a plating solution housed in a plating tank, a supplying step 104 of supplying the plating solution to the plating tank such that the plating solution upwardly flows through a plurality of through-holes in a center part of an ionically resistive element arranged inside the plating tank to raise a center part of the liquid surface of the plating solution, a first lowering step 106 of lowering a supporting member for supporting an outer edge portion of the surface to be plated of the substrate held by the holding member toward the liquid surface of the plating solution, and a second lowering step 108 of lowering the holding member such that the substrate is sandwiched by the supporting member lowered in the first lowering step 106 and the holding member while the center part of the liquid surface of the plating solution is raised in the supplying step 104.

A method including closing upper and lower ends of a bore with upper and lower closure element, respectively; introducing a cathode into the bore; and flowing an electrolyte through an annular space between a wall of the bore an outer surface of the cathode to provide an inner surface of the bore with a wear-resistant surface by electrolysis.

In a plasma electrolytic oxidation apparatus and a method of plasma electrolytic oxidation using the plasma electrolytic oxidation apparatus, the plasma electrolytic oxidation apparatus includes a chamber and an electrode unit. The chamber is configured to receive an electrolyte. The electrode unit is configured to receive the electrolyte from the chamber and to treat an object with a plasma electrolytic oxidation treatment. The electrode unit includes an electrode, an enclosing part and a cover. The electrode is configured to receive a voltage from outside, and to form a receiving space in which the electrolyte is received between the electrode and the object. The enclosing part is configured to enclose a gap between the electrode and the object. The cover is configured to cover the electrode.

In a film forming method, in a state where a metal solution is sealed in a first accommodation chamber of a housing with a solid electrolyte membrane and a fluid is sealed in a second accommodation chamber of a placing table with a thin film, a substrate is placed on the placing table and the placing table and the housing are moved relative to each other to cause the substrate to be interposed between the solid electrolyte membrane and the thin film, the solid electrolyte membrane and the thin film are pressed against the substrate interposed therebetween to cause the solid electrolyte membrane and the thin film to conform to a surface and a rear surface of the substrate, thereby forming a metal film.

An etcher comprises a bath, a plurality of blades, and a tunnel. The bath includes a first electrode at a first end and a second electrode at a second end. The plurality of blades is configured to fit in the bath. At least one blade of the plurality of blades holds a wafer. At least one tunnel is configured to fit between adjacent blades of the plurality of blades in the bath.