An electrochemical plating (ECP) system is provided. The ECP system includes an ECP cell comprising a plating solution for an ECP process, a sensor configured to in situ measure an interface resistance between a plated metal and an electrolyte in the plating solution as the ECP process continues, a plating solution supply system in fluid communication with the ECP cell and configured to supply the plating solution to the ECP cell, and a control system operably coupled to the ECP cell, the sensor and the plating solution supply system. The control system is configured to compare the interface resistance with a threshold resistance and to adjust a composition of the plating solution in response to the interface resistance being below the threshold resistance.

The present disclosure relates to an electroplating system including a first contact detection sensor and a second contact detection sensor disposed at a surface of a cone of the electroplating system. The first contact detection sensor detects a first resistance at a first contact between a substrate to be plated by the electroplating system and a first contact pin, the second contact detection sensor detects a second resistance at a second contact between the substrate and a second contact pin. A controller receives the first resistance and the second resistance, and determines the first contact and the second contact are not properly formed when a difference between the first resistance and the second resistance is not within a first predetermined resistance range, or the first resistance or the second resistance is not within a second predetermined resistance range.

The present invention relates to a plating apparatus and a plating method for partially forming a plating film on an object to be plated. The plating apparatus includes: a rotary electrode configured to be rotatable; a plating solution holding unit arranged to the rotary electrode and configured to hold a plating solution; and a power supply unit configured to apply a voltage between the portion to be plated and the rotary electrode.

A plating device includes: an anode; a substrate holder which holds a substrate; a substrate contact which comes into contact with a peripheral edge portion of the substrate; a resistor which is disposed in a way of facing the substrate holder between the anode and the substrate holder, and is used for adjusting ion movement; and a rotation driving mechanism which causes the resistor and the substrate holder to relatively rotate. The resistor includes: a shielding region which forms an outer frame and shields the ion movement between the anode and the substrate; and a resistance region which is formed on the radially inner side of the shielding region, and has a porous structure allowing the passage of an ion. An outer diameter of the resistance region has an amplitude centering on an imaginary reference circle, and has a wave shape which is periodic and annularly continuous.

Disclosed are cup assemblies for holding, sealing, and providing electrical power to a semiconductor substrate during electroplating which may include a cup bottom element having a main body portion and a moment arm, an elastomeric sealing element disposed on the moment arm, and an electrical contact element disposed on the elastomeric sealing element. The main body portion may be such that it does not substantially flex when a substrate is pressed against the moment arm, and it may be rigidly affixed to another feature of the cup structure. The ratio of the average vertical thickness of the main body portion to that of the moment arm may be greater than about 5. The electrical contact element may have a substantially flat but flexible contact portion disposed upon a substantially horizontal portion of the sealing element. The elastomeric sealing element may be integrated with the cup bottom element during manufacturing.

Provided is a technique that allows measuring a film thickness of a substrate in a plating process.

A plating apparatus 1000 includes a plating tank 10, a substrate holder 20, a rotation mechanism 30, a plurality of contact members 50, a coil 60, a current sensor 65, and a film thickness measuring device 70. The plurality of contact members 50 are disposed in a substrate holder and arranged in a circumferential direction of the substrate holder. The plurality of contact members 50 contact an outer peripheral edge of a lower surface of a substrate to supply electricity to the substrate in the plating process. The coil 60 generates a current by an electromagnetic induction due to a magnetic field generated by a current flowing into the contact member, the contact member being rotate together with the substrate holder in the plating process. The current sensor 65 detects the current generated in the coil. The film thickness measuring device 70 measures a film thickness of the substrate based on the current detected by the current sensor in the plating process.

An electroplating apparatus includes a plating bath and a substrate in a horizontal direction. The electroplating apparatus further includes a plurality of cathodes on first and second sides of the substrate in a first direction on one surface of the substrate, and an anode above the substrate, the anode being spaced apart from the substrate and configured to be movable in the first direction.

A method for creating a chrome-plated surface having a matte finish that typically includes: controlling a resistance of a current bridge circuit; depositing a first chromium layer on a substrate positioned in a chromium bath, wherein the first chromium layer is deposited by supplying current from a power source that is electrically connected to the substrate and to anodes positioned in the chromium bath; etching the first chromium layer by engaging a current bridge that closes the current bridge circuit; depositing a first intermediate chromium layer, wherein the first intermediate chromium layer is deposited by supplying current from the power source; etching the first intermediate chromium layer, wherein the first intermediate chromium layer is etched by engaging the current bridge; and depositing a final chromium layer, wherein the final chromium layer is deposited by supplying current from the power source.

Techniques herein provide a workpiece handling and loading apparatus for loading, unloading, and handling relatively flexible and thin substrates for transport and electrochemical deposition. Such a system assists with workpiece holder exchange between a delivery cartridge or magazine, and a workpiece holder. Embodiments include a workpiece handler configured to provide an air cushion to a given workpiece, and maneuvering to a given workpiece holder that can edge clamp the workpiece.

A wafer plating fixture for use in simultaneously electroplating a two substrates. The wafer plating fixture including: an electrically conductive carrier bus; a plurality of contact clips electrically coupled to the carrier bus and configured to hold the two substrates in place and electrically couple the two substrates to the carrier bus; and a non-conductive substrate backer to separate the two substrates coupled to the carrier bus. A method of electroplating a plurality of substrates. The method including: mounting two substrates to be plated onto a wafer plating fixture; mounting the wafer plating fixture on a continuous belt of plating system; dipping the wafer plating fixture with the two substrates held thereon into an electroplating bath; and applying a voltage to the two substrates via the wafer plating fixture.