A plating apparatus including a thief electrode that can be suitably maintained is provided. The plating apparatus includes a substrate holder holding a substrate, a thief electrode supporter supporting a thief electrode to be disposed outside the substrate, a plating tank configured to immerse the substrate in a plating solution for applying an electroplating treatment, a thief electrode maintenance tank configured to perform maintenance of the thief electrode, and a transport module configured to transport the thief electrode supporter to the plating tank and the thief electrode maintenance tank.

A plating apparatus for electroplating a wafer includes a housing defining a plating chamber for housing a plating solution. A voltage source of the apparatus has a first terminal having a first polarity and a second terminal having a second polarity different than the first polarity. The first terminal is electrically coupled to the wafer. An anode is within the plating chamber, and the second terminal is electrically coupled to the anode. A membrane support is within the plating chamber and over the anode. The membrane support defines apertures, wherein in a first zone of the membrane support a first aperture-area to surface-area ratio is a first ratio, and in a second zone of the membrane support a second aperture-area to surface-area ratio is a second ratio, different than the first ratio.

Among other things, one or more systems and techniques for promoting metal plating profile uniformity are provided. A magnetic structure is positioned relative to a semiconductor wafer that is to be electroplated with metal during a metal plating process. In an embodiment, the magnetic structure applies a force that decreases an edge plating current by moving metal ions away from a wafer edge of the semiconductor wafer. In an embodiment, the magnetic structure applies a force that increases a center plating current by moving metal ions towards a center portion of the semiconductor wafer. In this way, the edge plating current has a current value that is similar to a current value of the center plating current. The similarity between the center plating current and the edge plating current promotes metal plating uniformity.

A plating processing apparatus in which a plating object is immersed in a plating solution to form a plating layer on a surface of the plating object. A plating tank contains the plating solution, and a power supply roller is rotated while supplying electric power to the plating object, and conveys the plating object to be immersed into the plating solution contained in the plating tank and then moved to the outside of the plating solution. An anode case is disposed inside the plating tank and held in electrical contact with the plating solution contained in the plating tank, and a control panel controls electric power supplied to the power supply roller and the anode case. A first busbar electrically connects the power supply roller and the control panel, and a second busbar electrically connects the anode case and the control panel.

A substrate plating method includes forming a first resist film exposing a first feeding layer on a first face of a substrate; forming a second resist film exposing a second feeding layer on a second face of the substrate opposite to the first face; holding the substrate with a clamp member in such a manner that the clamp member is in contact with the first feeding layer and the second feeding layer, and arranging a first electrode in opposed relation with the first face and a second electrode in opposed relation with the second face; and forming a plating layer on a plating-scheduled region of the first face under conditions in which a value of current supplied between the second face and the second electrode is larger than a value of current supplied between the first face and the first electrode.

A system and method of using electrochemical additive manufacturing to add interconnection features, such as wafer bumps or pillars, or similar structures like heatsinks, to a plate such as a silicon wafer. The plate may be coupled to a cathode, and material for the features may be deposited onto the plate by transmitting current from an anode array through an electrolyte to the cathode. Position actuators and sensors may control the position and orientation of the plate and the anode array to place features in precise positions. Use of electrochemical additive manufacturing may enable construction of features that cannot be created using current photoresist-based methods. For example, pillars may be taller and more closely spaced, with heights of 200 μm or more, diameters of 10 μm or below, and inter-pillar spacing below 20 μm. Features may also extend horizontally instead of only vertically, enabling routing of interconnections to desired locations.

Described herein are apparatus and methods for the continuous application of nanolaminated materials by electrodeposition.

An electroplating system has a vessel assembly holding an electrolyte. A weir thief electrode assembly in the vessel assembly includes a plenum inside of a weir frame. The plenum divided into at least a first, a second and a third virtual thief electrode segment. A plurality of spaced apart openings through the weir frame lead out of the plenum. A weir ring is attached to the weir frame and guides flow of current during electroplating. The electroplating system provides process determined radial and circumferential current density control and does not require changing hardware components during set up.

A method for creating a chrome-plated surface having a matte finish that typically includes: controlling a resistance of a current bridge circuit; depositing a first chromium layer on a substrate positioned in a chromium bath, wherein the first chromium layer is deposited by supplying current from a power source that is electrically connected to the substrate and to anodes positioned in the chromium bath; etching the first chromium layer by engaging a current bridge that closes the current bridge circuit; depositing a first intermediate chromium layer, wherein the first intermediate chromium layer is deposited by supplying current from the power source; etching the first intermediate chromium layer, wherein the first intermediate chromium layer is etched by engaging the current bridge; and depositing a final chromium layer, wherein the final chromium layer is deposited by supplying current from the power source.

Provided is a plating apparatus capable of improving uniformity of a plating film formed on a substrate. The plating apparatus includes a plating tank, a substrate holder that holds a substrate, and an anode disposed in the plating tank to oppose the substrate held by the substrate holder. The plating apparatus also includes a conduit having a first portion including an opening end disposed in a region between the substrate held by the substrate holder and the anode, and a second portion apart from the region between the substrate held by the substrate holder and the anode, the conduit having at least a part filled with a plating solution, and a potential sensor that is disposed in the second portion of the conduit and that is configured to measure a potential of the plating solution.