According to an embodiment, a substrate holder holds a rectangular substrate and performs electrolytic plating on the substrate. The substrate holder includes a first holding member and a second holding member clamping the substrate between the first holding member and it and having a contact which contacts a peripheral part of the substrate and supplies an electric current to the substrate. The second holding member includes an opening defining a region where an electric field is formed and, at a position farther from the substrate than the opening, a shielding part protruding closer to an inner side than the opening and shielding the peripheral part of a surface of the substrate. The shielding part has a frame shape having a predetermined shielding width in the peripheral part of the substrate, and has, at a corner part thereof, a discontinuous part having a smaller shielding width than surroundings.

An apparatus and system for in-situ electropolishing and/or for in-situ electroforming a structural or functional reinforcement layer such as a sleeve of a selected metallic material on the internal surfaces of metallic tubular conduits are described. The apparatus and system can be employed on straight tubes, tube joints to different diameter tubes or face plates, tube elbows and other complex shapes encountered in piping systems. The apparatus includes components which can be independently manipulated and assembled on or near a degraded site and, after secured in place, form an electrolytic cell within the workpiece. The apparatus contains counter-electrodes which can be moved relative to the workpiece surface during the electroplating and/or electropolishing operation to provide flexibility in selecting and employing electropolishing process parameters and electroplating process parameters to design and optimize the surface roughness as well as the size, shape and properties of the electrodeposited reinforcing layer(s).

A preparation method of a copper-based graphene composite with high thermal conductivity is provided. A new electrodeposited solution is used for direct current (DC) electrodeposition at a reasonable electrodeposition frequency, which fabricates a new copper-based graphene composite with high tensile strength and thermal conductivity. The copper-based graphene composite prepared by electrodeposition has high thermal conductivity of 390-1112 W/(m.Math.k) and tensile strength of 300-450 MPa, which meets the requirements in the field of thermal conduction.

To partially or locally control a plating film thickness on a polygonal substrate. There is provided a regulation plate for adjusting a current between an anode and the polygonal substrate. This regulation plate includes a main body that has an edge forming a polygonal opening through which the current passes and an attachable/detachable shielding member to shield at least a part of the polygonal opening.

An electroplating system has a vessel assembly holding an electrolyte. A weir thief electrode assembly in the vessel assembly includes a plenum inside of a weir frame. The plenum divided into at least a first, a second and a third virtual thief electrode segment. A plurality of spaced apart openings through the weir frame lead out of the plenum. A weir ring is attached to the weir frame and guides flow of current during electroplating. The electroplating system provides process determined radial and circumferential current density control and does not require changing hardware components during set up.

Embodiments of the present invention provide an electroplating apparatus for electroplating on a surface of a wafer, the electroplating apparatus comprising a plurality of electrodes, the plurality of electrodes forming electric fields on the surface of the wafer, wherein an independent electric field is formed in a designated area, the intensity of the independent electric field is independently controlled, when a notch of the wafer is positioned within the designated area, a total amount of power received by the notch within the designated area is reduced. Embodiments of the present invention also provide an electroplating method for electroplating on a surface of a wafer by using a plurality of electrodes, the method controlling the plurality of electrodes to form electric fields on the surface of the wafer, wherein an independent electric field is formed in a designated area, the intensity of the independent electric field is independently controlled, when a notch of the wafer is positioned within the designated area, a total amount of power received by the notch within the designated area is reduced. The electroplating apparatus and the electroplating method of the present invention control the electroplating height of the notch of the wafer by directly controlling the intensity of the electric field. Compared with a conventional control method which only changing the rotation speed of the wafer, the present invention is more accurate and reliable, the electroplating efficiency is also increased.

A method of forming a corrosion-resistant ceramic coating on a metallic substrate, the method comprising providing a passivation layer on a surface of the metallic substrate by electrochemical passivation of the metallic substrate under a first electrical current and using a first electrically conducting solution; and providing the corrosion-resistant ceramic coating on an outermost surface of the metallic substrate, the outermost surface in use adapted to be exposed to a corrosive environment, by plasma electrolytic oxidation of the metallic substrate with the passivation layer, in a second electrically conducting solution and under a second electrical current having a discharge voltage. The first and the second electrically conducting solutions comprise a tetrafluoroborate compound.

A method for creating a chrome-plated surface having a matte finish that typically includes: controlling a resistance of a current bridge circuit; depositing a first chromium layer on a substrate positioned in a chromium bath, wherein the first chromium layer is deposited by supplying current from a power source that is electrically connected to the substrate and to anodes positioned in the chromium bath; etching the first chromium layer by engaging a current bridge that closes the current bridge circuit; depositing a first intermediate chromium layer, wherein the first intermediate chromium layer is deposited by supplying current from the power source; etching the first intermediate chromium layer, wherein the first intermediate chromium layer is etched by engaging the current bridge; and depositing a final chromium layer, wherein the final chromium layer is deposited by supplying current from the power source.

An apparatus and system for in-situ electropolishing and/or for in-situ electroforming a structural or functional reinforcement layer such as a sleeve of a selected metallic material on the internal surfaces of metallic tubular conduits are described. The apparatus and system can be employed on straight tubes, tube joints to different diameter tubes or face plates, tube elbows and other complex shapes encountered in piping systems. The apparatus includes components which can be independently manipulated and assembled on or near a degraded site and, after secured in place, form an electrolytic cell within the workpiece. The apparatus contains counter-electrodes which can be moved relative to the workpiece surface during the electroplating and/or electropolishing operation to provide flexibility in selecting and employing electropolishing process parameters and electroplating process parameters to design and optimize the surface roughness as well as the size, shape and properties of the electrodeposited reinforcing layer(s).

A manufacturing apparatus for a semiconductor device includes a substrate holding unit configured to hold a substrate; a processing liquid supply unit configured to supply a processing liquid onto the substrate held by the substrate holding unit; an electrolytic processing unit disposed to face the substrate holding unit and configured to perform an electrolytic processing on the substrate held by the substrate holding unit; and a terminal configured to apply a voltage to the substrate. The electrolytic processing unit includes a direct electrode configured to be brought into contact with the processing liquid supplied onto the substrate to apply a voltage with respect to the substrate; and an indirect electrode configured to form an electric field in the processing liquid supplied onto the substrate.