The present disclosure is directed to an electroless plating process using a panel basket for holding semiconductor panels comprising a plurality of metal pads and shielding the metal pads from contaminants and over-etching and under-etching caused by the contaminants.

The masking jig includes a contact member and a support unit. The contact member includes a through-hole allowing for insertion of a rod-like piston rod, and a deformation part around the through-hole configured to get elastically deformed by insertion of a male thread of the piston rod into the through-hole and contact the outer peripheral end face of the piston rod. The support unit supports the contact member such that the contact member moves in a direction intersecting an axial direction of the piston rod.

A flow generator has an electrolyte feed device for feeding an electrolyte and an electrolyte distribution device. There is also described a deposition device having such a flow generator and a method for the deposition of a material on a surface of an object.

Embodiments of the present invention provide an electroplating apparatus for electroplating on a surface of a wafer, the electroplating apparatus comprising a plurality of electrodes, the plurality of electrodes forming electric fields on the surface of the wafer, wherein an independent electric field is formed in a designated area, the intensity of the independent electric field is independently controlled, when a notch of the wafer is positioned within the designated area, a total amount of power received by the notch within the designated area is reduced. Embodiments of the present invention also provide an electroplating method for electroplating on a surface of a wafer by using a plurality of electrodes, the method controlling the plurality of electrodes to form electric fields on the surface of the wafer, wherein an independent electric field is formed in a designated area, the intensity of the independent electric field is independently controlled, when a notch of the wafer is positioned within the designated area, a total amount of power received by the notch within the designated area is reduced. The electroplating apparatus and the electroplating method of the present invention control the electroplating height of the notch of the wafer by directly controlling the intensity of the electric field. Compared with a conventional control method which only changing the rotation speed of the wafer, the present invention is more accurate and reliable, the electroplating efficiency is also increased.

A plating system comprising a plating tank for applying plate processing to a substrate, a sensor configured to measure actual plating film thickness of the substrate, and a controller configured to control plating current supplied to the plating tank and plating time for the plate processing of the substrate within the plating tank. The controller is capable of setting target plating film thickness, plating current, and plating time as a plate processing recipe. At least one of the plating current and the plating time is automatically corrected so that the actual plating film thickness and the target plating film thickness become equal to each other, and the result is reflected in the plate processing for the subsequent substrate.

To reduce fluctuation of the liquid level of plating solution caused by the operation of a paddle. A plating apparatus for plating a substrate is provided. The plating apparatus includes: a plating bath configured to store plating solution; a paddle that is arranged in the plating bath and configured to stir the plating solution; and a liquid level fluctuation reducing member that is arranged in the plating bath, has a flow path through which the plating solution passes, and is configured to increase a flow velocity of the plating solution passing through the flow path to attenuate energy of waves formed by the plating solution.

A substrate holder holds a polygonal substrate Wf. A plating bath accommodates the anode holder and the substrate holder. The anode and the substrate are immersed in a plating solution in the plating bath. A control device controls a current flowing between the anode and the substrate. The substrate holder has power feed members placed along respective sides of the polygonal substrate, and there are a plurality of groups of the sides, each group including at least one side, at least one side being different between the groups. The control device can control, on a group-by-group basis, a current to be supplied to the power feed members.

A plating apparatus according to the present disclosure includes an anode holder configured to hold an anode; a substrate holder placed opposite the anode holder and configured to hold a substrate; and an anode mask installed on a front face of the anode holder and provided with a first opening adapted to allow passage of an electric current flowing between an anode and the substrate. The diameter of the first opening in the anode mask is configured to be adjustable. When a first substrate is plated, a diameter of the first opening is adjusted to a first diameter. When a second substrate is plated, the diameter of the first opening is adjusted to a second diameter smaller than the first diameter.

To suppress thicknesses of a plating film of dies adjacent to a portion in which patterns are not formed on a resist, and improve uniformity of a plated metal layer thickness in a substrate surface. A substrate holder according to the present invention has: a holding surface 57 for holding a substrate; a second holding member 60 configured to have an opening part 63 for exposing the holding surface 57, and to press the substrate placed on the holding surface 57 against the holding surface 57 to thereby hold the substrate; and a shielding plate 65 configured to protrude to an inside of the opening part 63 of the second holding member 60 in a radial direction and to shield a part of the holding surface 57. The shielding plate 65 is configured to be movable along the opening part 63.

The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold between the channeled plate and substrate, and on the sides by a flow confinement ring. A seal may be provided between the bottom surface of a substrate holder and the top surface of an element below the substrate holder (e.g., the flow confinement ring). During plating, fluid enters the cross flow manifold through channels in the channeled plate, and through a cross flow inlet, then exits at the cross flow exit, positioned opposite the cross flow inlet. The apparatus may switch between a sealed state and an unsealed state during electroplating, for example by lowering and lifting the substrate and substrate holder as appropriate to engage and disengage the seal.