The present disclosure relates to a filling device and apparatus, an electrochemical deposition system, and a filling method. The filling device includes: a feeding structure including a first feed port and a first discharge port; a container including a second feed port and a second discharge port; a weighing means disposed on the container; a conveying structure disposed between the first discharge port and the second feed port, the second feed port being in communication with the first discharge port via the conveying structure, and the conveying structure being configured to convey a material output from the first discharge port to the second feed port; and a control structure connected to the weighing means and the conveying structure, respectively, and configured to control a conveying speed of the conveying structure according to the weight detected by the weighing means.

A semiconductor manufacturing apparatus including: a first device; one or more sensors; a first calculation circuit that calculates one or more feature quantities of the first device from the detected physical quantities; and a failure prediction circuit that compares the one or more feature quantities with a plurality of pieces of model data of a temporal change in one or more feature quantities until the first device fails, decides a piece of model data with the minimum difference from the calculated one or more feature quantities among the plurality of pieces of model data, calculates predicted failure time from a difference between a failure point in time and a point in time at which a difference from the calculated one or more feature quantities is the minimum in the piece of model data.

The disclosure provides a method comprising inducing a first current between a source of a countercharge and a first electrode, the first current being through an electrolyte. A second current is induced across the first electrode, the second current being transverse to the first current, and the second current inducing a relativistic charge across the first electrode.

The disclosure provides a method comprising inducing a first current between a source of a countercharge and a first electrode, the first current being through an electrolyte. A second current is induced across the first electrode, the second current being transverse to the first current, and the second current inducing a relativistic charge across the first electrode.

A plating method capable of saving a substrate in an event of a failure of a transporter, a plating tank, or other component when the substrate is being plated is disclosed. The plating method includes: transporting a plurality of substrates to a plurality of plating tanks, respectively, with a transporter; immersing the plurality of substrates in a plating solution held in the plurality of plating tanks to plate the plurality of substrates; detecting a failure that has occurred in the transporter or a post-processing tank; and replacing the plating solution in the plurality of plating tanks with a preservative liquid to thereby immerse the plurality of substrates in the preservative liquid.

A plating method capable of saving a substrate in an event of a failure of a transporter, a plating tank, or other component when the substrate is being plated is disclosed. The plating method includes: transporting a plurality of substrates to a plurality of plating tanks, respectively, with a transporter; immersing the plurality of substrates in a plating solution held in the plurality of plating tanks to plate the plurality of substrates; detecting a failure that has occurred in the transporter or a post-processing tank; and replacing the plating solution in the plurality of plating tanks with a preservative liquid to thereby immerse the plurality of substrates in the preservative liquid.

A plating apparatus and plating methods for plating metal layers on a substrate. In an embodiment, a plating method comprises: step 1: immersing a substrate into plating solution of a plating chamber assembly including at least a first anode and a second anode (3001); step 2: turning on a first plating power supply applied on the first anode, setting the first plating power supply to output a power value P.sub.11 and continue with a period T.sub.11 (3002); step 3: when the period T.sub.11 ends, adjusting the first plating power supply applied on the first anode to output a power value P.sub.12 and continue with a period T.sub.12, at the same time, turning on a second plating power supply applied on the second anode, and setting the second plating power supply to output a power value P.sub.21 and continue with a period T.sub.21 (3003); and step 4: when the period T.sub.21 ends, adjusting the second plating power supply applied on the second anode to output a power value P.sub.22 and continue with a period T.sub.22; wherein step 2 to step 4 are performed periodically.

A method of controlling chemical concentration in electrolyte includes measuring a chemical concentration in an electrolyte, wherein the electrolyte is contained in a tank; and increasing a vapor flux through an exhaust pipe connected to the tank when the measured chemical concentration is lower than a control lower limit value.

A method of controlling chemical concentration in electrolyte includes measuring a chemical concentration in an electrolyte, wherein the electrolyte is contained in a tank; and increasing a vapor flux through an exhaust pipe connected to the tank when the measured chemical concentration is lower than a control lower limit value.

Provided is a technique that can suppress remaining of air bubbles on a lower surface of an electric field shielding plate. A plating apparatus 1000 include a plating tank 10, a substrate holder 30, and an electric field shielding plate 60 configured to be arranged in a portion between an anode 50 and a substrate Wf in an inside of the plating tank for shielding a part of an electric field formed between the anode and the substrate. In a top view of the electric field shielding plate, in the inside of the plating tank, an unshielded region 70 that is without shielded by the electric field shielding plate is disposed. An inclined surface is disposed in a lower surface 61a of the electric field shielding plate, the inclined surface is inclined with respect to a horizontal direction and is configured to release an air bubble existing on the lower surface thereof to the unshielded region.