Methods are provided for modifying a porous surface of an implantable medical device by subjecting the porous surface to a modified micro-arc oxidation process to improve the ability of the medical device to resist microbial growth, to improve the ability of the medical device to adsorb a bioactive agent or a therapeutic agent, and to improve tissue in-growth and tissue on-growth of the implantable medical device.

Methods are provided for modifying a porous surface of an implantable medical device by subjecting the porous surface to a modified micro-arc oxidation process to improve the ability of the medical device to resist microbial growth, to improve the ability of the medical device to adsorb a bioactive agent or a therapeutic agent, and to improve tissue in-growth and tissue on-growth of the implantable medical device.

A film plating machine and electroplating production line are provided. The film plating machine has a plating solution tank, conductive substrate film conveying devices and a power supply. A plating solution and an anode member are provided in the plating solution tank. The conductive substrate film conveying devices are provided at both sides of the plating solution tank and configured to clamp two opposite side edges of a horizontally-placed conductive substrate film and drive the conductive substrate film to horizontally enter and exit the plating solution tank in a first direction. A positive electrode of the power supply is electrically connected with the anode member, and a negative electrode of the power supply is electrically connected with the conductive substrate film through the conductive substrate film conveying devices.

A film plating machine and electroplating production line are provided. The film plating machine has a plating solution tank, conductive substrate film conveying devices and a power supply. A plating solution and an anode member are provided in the plating solution tank. The conductive substrate film conveying devices are provided at both sides of the plating solution tank and configured to clamp two opposite side edges of a horizontally-placed conductive substrate film and drive the conductive substrate film to horizontally enter and exit the plating solution tank in a first direction. A positive electrode of the power supply is electrically connected with the anode member, and a negative electrode of the power supply is electrically connected with the conductive substrate film through the conductive substrate film conveying devices.

Provided is a plating process that enables merits of an insoluble anode to be sufficiently enjoyed in a jet type plating equipment. Also provided is a plating equipment having a plating tank including an opening part; a solution supply piping; an insoluble anode; and an diaphragm, an diaphragm outer peripheral end being fixed to a plating tank inner wall, a through-hole being provided in an diaphragm center, a hole peripheral end of the through-hole being fixed to the solution supply piping, the diaphragm being arranged so as to be inclined upward in an outer circumferential direction from the solution supply piping. A silicon ring is firmly fixed to each of the outer peripheral end of the diaphragm and a hole edge of the through-hole of the diaphragm. The solution supply piping supplies the plating solution to an upper catholyte chamber in the plating tank, the upper catholyte chamber being formed by the diaphragm and the placed object to be plated. An annular flow passage including a solution ejection hole in an upper part thereof is provided in an outer circumference of the solution supply piping, and a lower anolyte chamber solution is supplied from the solution ejection hole to a lower anolyte chamber in the plating tank, the lower anolyte chamber being formed below the diaphragm, whereby a flow that moves from around the through-hole of the diaphragm toward the outer circumferential direction of the diaphragm is formed in the lower piping isolation chamber solution.

Provided is a plating process that enables merits of an insoluble anode to be sufficiently enjoyed in a jet type plating equipment. Also provided is a plating equipment having a plating tank including an opening part; a solution supply piping; an insoluble anode; and an diaphragm, an diaphragm outer peripheral end being fixed to a plating tank inner wall, a through-hole being provided in an diaphragm center, a hole peripheral end of the through-hole being fixed to the solution supply piping, the diaphragm being arranged so as to be inclined upward in an outer circumferential direction from the solution supply piping. A silicon ring is firmly fixed to each of the outer peripheral end of the diaphragm and a hole edge of the through-hole of the diaphragm. The solution supply piping supplies the plating solution to an upper catholyte chamber in the plating tank, the upper catholyte chamber being formed by the diaphragm and the placed object to be plated. An annular flow passage including a solution ejection hole in an upper part thereof is provided in an outer circumference of the solution supply piping, and a lower anolyte chamber solution is supplied from the solution ejection hole to a lower anolyte chamber in the plating tank, the lower anolyte chamber being formed below the diaphragm, whereby a flow that moves from around the through-hole of the diaphragm toward the outer circumferential direction of the diaphragm is formed in the lower piping isolation chamber solution.

A plating device comprises: a frame body shaped to surround a region to be plated on one principal surface of a substrate; a conveying unit that conveys the substrate to a position below the frame body while supporting the other principal surface of the substrate with the region to be plated faced up; a lifting unit that relatively lifts the substrate with respect to the frame body to form a storage space for storing a plating solution by the frame body and the region to be plated; a supply unit that supplies the plating solution to the storage space; a cathode electrode configured to be electrically connected to the region to be plated; and an anode electrode configured to be held in contact with the plating solution stored in the storage space.

The disclosure provides a method comprising inducing a first current between a source of a countercharge and a first electrode, the first current being through an electrolyte. A second current is induced across the first electrode, the second current being transverse to the first current, and the second current inducing a relativistic charge across the first electrode.

The disclosure provides a method comprising inducing a first current between a source of a countercharge and a first electrode, the first current being through an electrolyte. A second current is induced across the first electrode, the second current being transverse to the first current, and the second current inducing a relativistic charge across the first electrode.

Provided is a plating diaphragm used for a plating method including disposing the plating diaphragm between an anode and a substrate that is a cathode, applying a voltage between the anode and the substrate, in a state in which a surface of the substrate is in contact with the plating diaphragm, to reduce metal ions contained in the plating diaphragm, and depositing a metal derived from the metal ions on the surface of the substrate, to form a metal film on the surface of the substrate, the plating diaphragm containing a base made of a polyolefin porous membrane, in a case in which pure water is dropped on a surface of the plating diaphragm, a contact angle between a droplet of the pure water and the surface of the plating diaphragm after one second has passed since landing of the droplet of the pure water on the surface is from 0 to 90, and a tensile breaking strength is from 11 MPa to 300 MPa.