A plating apparatus 1000 includes a plating tank 10 and a substrate holder 30. The plating tank includes an anode 11 arranged in an anode chamber 13. The substrate holder is arranged above the anode chamber and configured to hold a substrate Wf as a cathode. The anode has a cylindrical shape extending in a vertical direction. The plating apparatus further includes a gas accumulation portion 60 and a discharge mechanism 70. The gas accumulation portion is disposed in the anode chamber so as to have a space between the anode and the gas accumulation portion. The gas accumulation portion covers an upper end, an outer peripheral surface, and an inner peripheral surface of the anode to accumulate a process gas generated from the anode. The discharge mechanism is configured to discharge the process gas accumulated in the gas accumulation portion to outside of the plating tank.

A plating system is provided. The plating system includes an electroplating chamber defining a plating area within which a wafer is plated. The electroplating chamber includes an inlet configured to introduce plating solution into the plating area of the electroplating chamber. The electroplating chamber includes an outlet configured to remove the plating solution from the plating area of the electroplating chamber. The plating system includes a barrier configured to inhibit removal of the plating solution from the plating area.

A plating system is provided. The plating system includes an electroplating chamber defining a plating area within which a wafer is plated. The electroplating chamber includes an inlet configured to introduce plating solution into the plating area of the electroplating chamber. The electroplating chamber includes an outlet configured to remove the plating solution from the plating area of the electroplating chamber. The plating system includes a barrier configured to inhibit removal of the plating solution from the plating area.

An electroplating device and an electroplating method, the electroplating device includes an electroplating unit for electroplating a production panel. The electroplating unit includes an electrolyte channel for jetting an electrolyte toward the production panel, and an electroplating assembly disposed on an outer surface of the electrolyte channel. The electroplating assembly includes an anode disposed on the outer surface of the electrolyte channel, and a suction channel in the anode which is used for absorbing the electrolyte in a direction opposite to a jet-plating direction. The electrolyte may be uniformly distributed on the production panel by the combination of the electrolyte channel and the electroplating assembly.

An electroplating system includes a tank functioning as an anode, wherein the tank is configured in a horizontal orientation having a length greater than its height, a component part disposed within the tank and functioning as a cathode, an electrical connection, coupled to the anode and cathode, for providing an electric current, and a supply line for delivering an electrolytic fluid to within the tank.

An electroplating system includes a tank functioning as an anode, wherein the tank is configured in a horizontal orientation having a length greater than its height, a component part disposed within the tank and functioning as a cathode, an electrical connection, coupled to the anode and cathode, for providing an electric current, and a supply line for delivering an electrolytic fluid to within the tank.

An electrochemical deposition system for depositing metal onto a workpiece, comprises a deposition chamber adapted to receive plating solution, a workpiece holder for holding a workpiece in a first plane, a shield holder for holding a shield in a second plane substantially parallel to the first plane, an agitation plate having a profiled surface to agitate plating solution, wherein the workpiece holder, shield holder and agitation plate are all adapted for insertion into and removal from the deposition chamber, and further comprising an actuator operable to change a relative distance between the workpiece holder and shield holder, in a direction normal to the first and second planes, while they are located within the deposition chamber.

A method of cleaning a conducting film containing tin oxide from an insulating surface of an item for use in electroplating applications, comprises the steps of immersing the item in a cleaning fluid and irradiating the immersed item with light of wavelength in the range 100 nm-450 nm.

A plating system is provided. The plating system includes an electroplating chamber defining a plating region within which a wafer is plated. The electroplating chamber includes an inlet configured to introduce plating solution into the plating region of the electroplating chamber. The electroplating chamber includes an outlet configured to remove the plating solution from the plating region of the electroplating chamber. The plating system includes a barrier configured to inhibit removal of the plating solution from the plating region.

A plating system is provided. The plating system includes an electroplating chamber defining a plating region within which a wafer is plated. The electroplating chamber includes an inlet configured to introduce plating solution into the plating region of the electroplating chamber. The electroplating chamber includes an outlet configured to remove the plating solution from the plating region of the electroplating chamber. The plating system includes a barrier configured to inhibit removal of the plating solution from the plating region.