Patent classifications
C25D17/02
Cross flow manifold for electroplating apparatus
The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. In many cases the material is a metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold defined on the bottom by the channeled plate, on the top by the substrate, and on the sides by a cross flow confinement ring. During plating, fluid enters the cross flow manifold both upward through the channels in the channeled plate, and laterally through a cross flow side inlet positioned on one side of the cross flow confinement ring. The flow paths combine in the cross flow manifold and exit at the cross flow exit, which is positioned opposite the cross flow inlet. These combined flow paths result in improved plating uniformity.
Deformation Verification System and Method of Vehicle Body
A deformation verification system of a vehicle body includes a dip tank in which fluid is contained. The dip tank has a transparent window from the outside to see the inside. A moving device is configured to lower the vehicle body into the fluid, to move the vehicle body in the fluid and to raise the vehicle body. A camera is installed to detect the form of the vehicle body through the transparent window.
PLATING DEVICE
A plating device comprising: a water tank into which a plating solution is poured; a tubular nozzle being disposed in the water tank and serving as an anode; a to-be-plated object being disposed in the water tank so as to be opposed to the nozzle and serving as a cathode; a direct-current power source to apply a voltage between the nozzle and the to-be-plated object; and a pump to circulate the plating solution such that the plating solution poured into the water tank passes through the nozzle and is ejected onto the to-be-plated object. A perforated plate member, which includes a through-hole having a smaller diameter than the inside diameter of the nozzle, is arranged on the inflow side of the nozzle such that the through-hole is opposed to an open region of the nozzle.
Method and device for electroplating in cylindrical geometry
A method and device for electrodeposition in cylindrical geometry. A method for electrochemically depositing a thin layer on a flexible substrate, comprising: providing, in an electrolysis bath, a first closed cylinder in a second hollow cylinder, applying the flexible substrate to one of the surfaces chosen from the outer surface of the first cylinder and the inner surface of the second, the flexible substrate forming a first electrode, providing, in the electrolysis bath, a second electrode, and applying a potential difference between the first electrode and the second electrode in order to electrodeposit the thin layer on the flexible substrate.
Method and device for electroplating in cylindrical geometry
A method and device for electrodeposition in cylindrical geometry. A method for electrochemically depositing a thin layer on a flexible substrate, comprising: providing, in an electrolysis bath, a first closed cylinder in a second hollow cylinder, applying the flexible substrate to one of the surfaces chosen from the outer surface of the first cylinder and the inner surface of the second, the flexible substrate forming a first electrode, providing, in the electrolysis bath, a second electrode, and applying a potential difference between the first electrode and the second electrode in order to electrodeposit the thin layer on the flexible substrate.
Plating system and method of plating wafer
A plating system is provided. The plating system includes an electroplating chamber defining a plating region within which a wafer is plated. The electroplating chamber includes an inlet configured to introduce plating solution into the plating region of the electroplating chamber. The electroplating chamber includes an outlet configured to remove the plating solution from the plating region of the electroplating chamber. The plating system includes a barrier configured to inhibit removal of the plating solution from the plating region.
Plating system and method of plating wafer
A plating system is provided. The plating system includes an electroplating chamber defining a plating region within which a wafer is plated. The electroplating chamber includes an inlet configured to introduce plating solution into the plating region of the electroplating chamber. The electroplating chamber includes an outlet configured to remove the plating solution from the plating region of the electroplating chamber. The plating system includes a barrier configured to inhibit removal of the plating solution from the plating region.
Method for passivating the surface of a tinplate and electrolysis system for carrying out the method
In a method for passivating the surface of a tinplate using electrolytic deposition of a passivation layer containing chromium oxide/chromium hydroxide on the surface, the electrolytic deposition of the passivation layer is carried out at least partly from an electrolyte solution which contains a trivalent chromium compound, at least one salt for increasing the conductivity and at least one acid or one base for adjusting a desired pH value and is free from organic complexing agents and free from buffering agents. In order to increase the amount of chromium oxide in the passivation layer, after the electrolytic deposition of the passivation layer, the passivated tinplate is subjected to a thermal treatment in which the passivated tinplate is kept at a treatment temperature of 100? C. or more for a treatment time of at least 0.5 seconds.
Method for passivating the surface of a tinplate and electrolysis system for carrying out the method
In a method for passivating the surface of a tinplate using electrolytic deposition of a passivation layer containing chromium oxide/chromium hydroxide on the surface, the electrolytic deposition of the passivation layer is carried out at least partly from an electrolyte solution which contains a trivalent chromium compound, at least one salt for increasing the conductivity and at least one acid or one base for adjusting a desired pH value and is free from organic complexing agents and free from buffering agents. In order to increase the amount of chromium oxide in the passivation layer, after the electrolytic deposition of the passivation layer, the passivated tinplate is subjected to a thermal treatment in which the passivated tinplate is kept at a treatment temperature of 100? C. or more for a treatment time of at least 0.5 seconds.
PADDLE CHAMBER WITH ANTI-SPLASHING BAFFLES
Electroplating systems according to embodiments of the present technology may include a plating chamber configured to deposit metal material onto substrates positioned in the plating chamber. The plating chamber may include a rotor and a vessel. The electroplating systems may include at least one of baffle positioned in the plating chamber. The at least one baffle may define a plurality of slots. The at least one baffle may be configured to limit or prevent fluid from splashing the rotor or the plating chamber during operation of the plating chamber.