C25D17/02

SEMICONDUCTOR MANUFACTURING APPARATUS, FAILURE PREDICTION METHOD FOR SEMICONDUCTOR MANUFACTURING APPARATUS, AND FAILURE PREDICTION PROGRAM FOR SEMICONDUCTOR MANUFACTURING APPARATUS
20180294174 · 2018-10-11 ·

A semiconductor manufacturing apparatus including: a first device; one or more sensors; a first calculation circuit that calculates one or more feature quantities of the first device from the detected physical quantities; and a failure prediction circuit that compares the one or more feature quantities with a plurality of pieces of model data of a temporal change in one or more feature quantities until the first device fails, decides a piece of model data with the minimum difference from the calculated one or more feature quantities among the plurality of pieces of model data, calculates predicted failure time from a difference between a failure point in time and a point in time at which a difference from the calculated one or more feature quantities is the minimum in the piece of model data.

SEMICONDUCTOR MANUFACTURING APPARATUS, FAILURE PREDICTION METHOD FOR SEMICONDUCTOR MANUFACTURING APPARATUS, AND FAILURE PREDICTION PROGRAM FOR SEMICONDUCTOR MANUFACTURING APPARATUS
20180294174 · 2018-10-11 ·

A semiconductor manufacturing apparatus including: a first device; one or more sensors; a first calculation circuit that calculates one or more feature quantities of the first device from the detected physical quantities; and a failure prediction circuit that compares the one or more feature quantities with a plurality of pieces of model data of a temporal change in one or more feature quantities until the first device fails, decides a piece of model data with the minimum difference from the calculated one or more feature quantities among the plurality of pieces of model data, calculates predicted failure time from a difference between a failure point in time and a point in time at which a difference from the calculated one or more feature quantities is the minimum in the piece of model data.

METHODS OF MODIFYING THE POROUS SURFACE OF IMPLANTS
20180280143 · 2018-10-04 ·

Methods are provided for modifying a porous surface of an implantable medical device by subjecting the porous surface to a modified micro-arc oxidation process to improve the ability of the medical device to resist microbial growth, to improve the ability of the medical device to adsorb a bioactive agent or a therapeutic agent, and to improve tissue in-growth and tissue on-growth of the implantable medical device.

Prevent and remove organics from reservoir wells

Plating bath and well structures and methods are described to stop the organic compounds present in plating reservoir wells or bath solution from rising, i.e., climbing up the reservoir wall. An electroplating apparatus includes a vessel holding a liquid solution including metal plating material and an organic species, and a method of operating an electroplating apparatus. The apparatus is designed with plating bath and structures and methods to stop the organic compounds present in plating reservoir wells or bath solution from rising, i.e., climbing or wicking up the inner surfaces of reservoir walls, and to wash them back down on a continuous or cyclical basis in order to maintain a concentration of organic compounds in the plating solution within upper and lower specification limits.

Prevent and remove organics from reservoir wells

Plating bath and well structures and methods are described to stop the organic compounds present in plating reservoir wells or bath solution from rising, i.e., climbing up the reservoir wall. An electroplating apparatus includes a vessel holding a liquid solution including metal plating material and an organic species, and a method of operating an electroplating apparatus. The apparatus is designed with plating bath and structures and methods to stop the organic compounds present in plating reservoir wells or bath solution from rising, i.e., climbing or wicking up the inner surfaces of reservoir walls, and to wash them back down on a continuous or cyclical basis in order to maintain a concentration of organic compounds in the plating solution within upper and lower specification limits.

ADJUSTABLE AC/DC CONVERSION TOPOLOGY TO REGULATE AN ISOLATED DC LOAD WITH LOW AC RIPPLE

Electroplating and painting systems, methods and power converters are disclosed to provide regulated individual DC output signals to anode structures distributed in a plating solution in a tank to promote formation of plating material on a workpiece using a PWM inverter to generate a first AC signal, a sinewave filter to provide a filtered AC signal, a multiphase isolation transformer to provide a plurality of isolated AC signals, a multi-pulse diode bridge rectifier to provide a DC rectifier output signal, an output filter to provide a filtered DC rectifier output signal, and a blocking diode to provide the filtered DC rectifier output signal to the corresponding tank anode structure.

ADJUSTABLE AC/DC CONVERSION TOPOLOGY TO REGULATE AN ISOLATED DC LOAD WITH LOW AC RIPPLE

Electroplating and painting systems, methods and power converters are disclosed to provide regulated individual DC output signals to anode structures distributed in a plating solution in a tank to promote formation of plating material on a workpiece using a PWM inverter to generate a first AC signal, a sinewave filter to provide a filtered AC signal, a multiphase isolation transformer to provide a plurality of isolated AC signals, a multi-pulse diode bridge rectifier to provide a DC rectifier output signal, an output filter to provide a filtered DC rectifier output signal, and a blocking diode to provide the filtered DC rectifier output signal to the corresponding tank anode structure.

PLATING APPARATUS

Provided is a technique that ensures suppressing deterioration of plating quality of a substrate due to gas bubbles at an anode.

A plating module 400 includes a plating tank 10 configured to house a plating solution, an anode 13 arranged in the plating tank 10, a substrate holder 20 configured to hold a substrate WF with a surface to be plated facing downward so as to be opposed to the anode 13, a membrane module 40 that includes a first membrane 41 partitioning an inside of the plating tank 10 into an anode chamber 11 and a cathode chamber 12 and a second membrane 42 arranged between the first membrane 41 and the anode 13, and a pipe member 31 communicating between a first region R1 below the anode 13 in the plating tank 10 and a second region R2 between the first membrane 41 and the second membrane 42.

PLATING APPARATUS

Provided is a technique that ensures suppressing deterioration of plating quality of a substrate due to gas bubbles at an anode.

A plating module 400 includes a plating tank 10 configured to house a plating solution, an anode 13 arranged in the plating tank 10, a substrate holder 20 configured to hold a substrate WF with a surface to be plated facing downward so as to be opposed to the anode 13, a membrane module 40 that includes a first membrane 41 partitioning an inside of the plating tank 10 into an anode chamber 11 and a cathode chamber 12 and a second membrane 42 arranged between the first membrane 41 and the anode 13, and a pipe member 31 communicating between a first region R1 below the anode 13 in the plating tank 10 and a second region R2 between the first membrane 41 and the second membrane 42.

METHOD OF LIQUID MANAGEMENT IN ANODE CHAMBER AND APPARATUS FOR PLATING
20240318347 · 2024-09-26 ·

There is provided a method of liquid management in an anode chamber. The method comprises providing a plating tank that comprises an anode; a barrier membrane placed to come into contact with or to be brought into close contact with an upper face of the anode; a cathode chamber on an upper side and an anode chamber on a lower side parted by the barrier membrane; and an exhaust path provided to communicate with the anode chamber and configured to discharge bubbles from the anode chamber to outside of the plating tank; storing a plating solution in the anode chamber and in the cathode chamber, such that a liquid level of the plating solution in the exhaust path that is a liquid level of the plating solution in the anode chamber is lower than a liquid level of the plating solution in the cathode chamber; determining whether the liquid level of the plating solution in the exhaust path is lower than a predetermined height, based on an output of a liquid level sensor placed in the exhaust path; and supplying pure water or an electrolytic solution to the anode chamber, when it is determined that the liquid level of the plating solution in the exhaust path is lower than the predetermined height.