Disclosed are cup assemblies for holding, sealing, and providing electrical power to a semiconductor substrate during electroplating which may include a cup bottom element having a main body portion and a moment arm, an elastomeric sealing element disposed on the moment arm, and an electrical contact element disposed on the elastomeric sealing element. The main body portion may be such that it does not substantially flex when a substrate is pressed against the moment arm, and it may be rigidly affixed to another feature of the cup structure. The ratio of the average vertical thickness of the main body portion to that of the moment arm may be greater than about 5. The electrical contact element may have a substantially flat but flexible contact portion disposed upon a substantially horizontal portion of the sealing element. The elastomeric sealing element may be integrated with the cup bottom element during manufacturing.

A determination is made of a real-time azimuthal position of a notch alignment feature located on a support surface of a substrate holder relative to a fixed reference ray extending perpendicularly away from a rotational axis of the substrate holder as the substrate holder rotates about the rotational axis. A determination is made of an approach initiation azimuthal position of the notch alignment feature relative to the fixed reference ray at which vertical movement of the substrate holder should initiate in order to have the notch alignment feature located at a prescribed azimuthal position relative to the fixed reference ray when the substrate holder reaches a prescribed vertical position. A determination is made of a time delay required to have the notch alignment feature located at the approach initiation azimuthal position. Vertical movement of the substrate holder is initiated in accordance with the determined time delay.

A determination is made of a real-time azimuthal position of a notch alignment feature located on a support surface of a substrate holder relative to a fixed reference ray extending perpendicularly away from a rotational axis of the substrate holder as the substrate holder rotates about the rotational axis. A determination is made of an approach initiation azimuthal position of the notch alignment feature relative to the fixed reference ray at which vertical movement of the substrate holder should initiate in order to have the notch alignment feature located at a prescribed azimuthal position relative to the fixed reference ray when the substrate holder reaches a prescribed vertical position. A determination is made of a time delay required to have the notch alignment feature located at the approach initiation azimuthal position. Vertical movement of the substrate holder is initiated in accordance with the determined time delay.

Provided is a technique that allows a removal of air bubbles that remain on an ionically resistive element.

A plating apparatus 1000 includes a plating tank 10 configured to accumulate a plating solution Ps and including an ionically resistive element 12 arranged in the plating tank, a substrate holder 30 arranged above the ionically resistive element and configured to hold a dummy substrate Wfx, a rotation mechanism 40 configured to rotate the substrate holder, and an elevating mechanism 50 configured to elevate the substrate holder. At least one projecting portion is disposed on a lower surface of the dummy substrate. The at least one projecting portion 60 projects downward from the lower surface. The substrate holder includes a ring 31 projecting below an outer peripheral edge of the lower surface of the dummy substrate. The projecting portion has a lower surface positioned below a lower surface of the ring. The plating apparatus is configured to cause the rotation mechanism to rotate the substrate holder in a state where the elevating mechanism moves down the substrate holder to allow the projecting portion of the dummy substrate to be positioned above the ionically resistive element and to be immersed in the plating solution of the plating tank.

Provided is a technique that allows a removal of air bubbles that remain on an ionically resistive element.

A plating apparatus 1000 includes a plating tank 10 configured to accumulate a plating solution Ps and including an ionically resistive element 12 arranged in the plating tank, a substrate holder 30 arranged above the ionically resistive element and configured to hold a dummy substrate Wfx, a rotation mechanism 40 configured to rotate the substrate holder, and an elevating mechanism 50 configured to elevate the substrate holder. At least one projecting portion is disposed on a lower surface of the dummy substrate. The at least one projecting portion 60 projects downward from the lower surface. The substrate holder includes a ring 31 projecting below an outer peripheral edge of the lower surface of the dummy substrate. The projecting portion has a lower surface positioned below a lower surface of the ring. The plating apparatus is configured to cause the rotation mechanism to rotate the substrate holder in a state where the elevating mechanism moves down the substrate holder to allow the projecting portion of the dummy substrate to be positioned above the ionically resistive element and to be immersed in the plating solution of the plating tank.

Provided is a technique that allows measuring a film thickness of a substrate in a plating process.

A plating apparatus 1000 includes a plating tank 10, a substrate holder 20, a rotation mechanism 30, a plurality of contact members 50, a coil 60, a current sensor 65, and a film thickness measuring device 70. The plurality of contact members 50 are disposed in a substrate holder and arranged in a circumferential direction of the substrate holder. The plurality of contact members 50 contact an outer peripheral edge of a lower surface of a substrate to supply electricity to the substrate in the plating process. The coil 60 generates a current by an electromagnetic induction due to a magnetic field generated by a current flowing into the contact member, the contact member being rotate together with the substrate holder in the plating process. The current sensor 65 detects the current generated in the coil. The film thickness measuring device 70 measures a film thickness of the substrate based on the current detected by the current sensor in the plating process.

Provided is a technique that ensures suppressed invasion of particles generated at a bearing of a rotation mechanism into a plating tank.

A plating apparatus 1000 includes a labyrinth seal member 50. The labyrinth seal member includes an inner labyrinth seal 53 arranged below a bearing 33 to seal the bearing, an outer labyrinth seal 54 arranged outside in a radial direction of the rotation shaft 32 with respect to the inner labyrinth seal, a delivery port 55configured to supply air to an inner seal space 60 formed inside in the radial direction with respect to the inner labyrinth seal, and a suction port 56 configured to suction air in an outer seal space 65 formed outside in the radial direction with respect to the inner labyrinth seal and inside in the radial direction with respect to the outer labyrinth seat

Provided is a technique that ensures suppressed invasion of particles generated at a bearing of a rotation mechanism into a plating tank.

A plating apparatus 1000 includes a labyrinth seal member 50. The labyrinth seal member includes an inner labyrinth seal 53 arranged below a bearing 33 to seal the bearing, an outer labyrinth seal 54 arranged outside in a radial direction of the rotation shaft 32 with respect to the inner labyrinth seal, a delivery port 55configured to supply air to an inner seal space 60 formed inside in the radial direction with respect to the inner labyrinth seal, and a suction port 56 configured to suction air in an outer seal space 65 formed outside in the radial direction with respect to the inner labyrinth seal and inside in the radial direction with respect to the outer labyrinth seat

An electroplating apparatus includes a plating bath and a substrate in a horizontal direction. The electroplating apparatus further includes a plurality of cathodes on first and second sides of the substrate in a first direction on one surface of the substrate, and an anode above the substrate, the anode being spaced apart from the substrate and configured to be movable in the first direction.

One object of the present disclosure is to improve the accuracy of detection of an abnormality of various devices, and/or to advance the timing of detection of an abnormality. There is provided an apparatus for plating a substrate, comprising: an anode placed to be opposed to the substrate; an electric field regulating member placed between the substrate and the anode, provided with an opening, and equipped with an opening adjustment member configured to change a dimension of the opening; a motor configured to drive the opening adjustment member; and a control device configured to obtain an electric current value or a load factor of the motor, to calculate an amount of change in the load factor of the motor per unit time from the obtained electric current value or the obtained load factor of the motor, and to detect an abnormality of the electric field regulating member when it is detected that the amount of change in the load factor of the motor per unit time exceeds a predetermined threshold value.