A base structure in an electroplating system is provided. The base structure includes: includes: an annular member; a contact ring attached to an inner surface of the annular member and configured to be electrically connected to a wafer in an electroplating process; and a pair of shield structures attached to an upper surface of the annular member and extending in an vertical direction. Each of the pair of shield structures includes: a curved plate comprising a plurality of discharging openings, wherein plating solution residual is discharged through the plurality of discharging openings in a cleaning procedure; and a plurality of bevels, each of the plurality of bevels corresponding to each of the plurality of discharging openings and configured to guide the plating solution residual toward the corresponding discharging opening in the cleaning procedure.

A base structure in an electroplating system is provided. The base structure includes: includes: an annular member; a contact ring attached to an inner surface of the annular member and configured to be electrically connected to a wafer in an electroplating process; and a pair of shield structures attached to an upper surface of the annular member and extending in an vertical direction. Each of the pair of shield structures includes: a curved plate comprising a plurality of discharging openings, wherein plating solution residual is discharged through the plurality of discharging openings in a cleaning procedure; and a plurality of bevels, each of the plurality of bevels corresponding to each of the plurality of discharging openings and configured to guide the plating solution residual toward the corresponding discharging opening in the cleaning procedure.

A method of processing a semiconductor wafer is provided. The method includes introducing the wafer to a main chamber via a loading port, using a transfer mechanism to transfer the wafer to a first wafer processing module in a stack so that the wafer is disposed substantially horizontally in the first wafer processing module with a front face facing upwards, and performing a processing step on the front face of the wafer in the first wafer processing module.

A method of processing a semiconductor wafer is provided. The method includes introducing the wafer to a main chamber via a loading port, using a transfer mechanism to transfer the wafer to a first wafer processing module in a stack so that the wafer is disposed substantially horizontally in the first wafer processing module with a front face facing upwards, and performing a processing step on the front face of the wafer in the first wafer processing module.

An electrochemical deposition system having two or more electrochemical deposition modules arranged on a common platform and configured for depositing one or more metals on a substrate is described. Each electrochemical deposition module includes an anode compartment configured to contain a volume of anolyte fluid, a cathode compartment configured to contain a volume of catholyte fluid, and a membrane separating the anode compartment from the cathode compartment. Each electrochemical deposition module further includes a workpiece holder configured to hold opposing edges of a flexible workpiece between first and second leg members via a clamping mechanism, and a loader module configured to position the flexible workpiece in the workpiece holder while holding the flexible workpiece using an air cushion on each opposing planar surface of the flexible workpiece.

An electrochemical deposition system having two or more electrochemical deposition modules arranged on a common platform and configured for depositing one or more metals on a substrate is described. Each electrochemical deposition module includes an anode compartment configured to contain a volume of anolyte fluid, a cathode compartment configured to contain a volume of catholyte fluid, and a membrane separating the anode compartment from the cathode compartment. Each electrochemical deposition module further includes a workpiece holder configured to hold opposing edges of a flexible workpiece between first and second leg members via a clamping mechanism, and a loader module configured to position the flexible workpiece in the workpiece holder while holding the flexible workpiece using an air cushion on each opposing planar surface of the flexible workpiece.

Techniques herein provide a workpiece holder that can hold relatively flexible and thin workpieces for transport and electrochemical deposition while avoiding electroplating fluid wetting contacts or contact regions of a given workpiece. A workpiece holder frame holds a workpiece by gripping the workpiece on opposing sides of the workpiece. A flexure structure is used for clamping a given workpiece and for providing an electrical path for supplying a current to the workpiece. An elastomer covering provides sealing and insulation of the electrical flexure structure. The workpiece holder also provides tension to the workpiece to help hold the workpiece flat during processing. Each flexure structure can provide an independent electrical path to the workpiece surface.

Techniques herein provide a workpiece holder that can hold relatively flexible and thin workpieces for transport and electrochemical deposition while avoiding electroplating fluid wetting contacts or contact regions of a given workpiece. A workpiece holder frame holds a workpiece by gripping the workpiece on opposing sides of the workpiece. A flexure structure is used for clamping a given workpiece and for providing an electrical path for supplying a current to the workpiece. An elastomer covering provides sealing and insulation of the electrical flexure structure. The workpiece holder also provides tension to the workpiece to help hold the workpiece flat during processing. Each flexure structure can provide an independent electrical path to the workpiece surface.

The present disclosure provides a plating apparatus that can determine an acceleration at the time of an inappropriate deceleration of a transfer device that may cause contact between a substrate holder and a processing tank, a control method for a plating apparatus, and a storage medium storing a program. The plating apparatus according to the present disclosure includes a transfer device including an imaging device, the processing tank having an opening, a reference mark, and a control device, the control device is configured to be able to execute a test at a test acceleration, and the test includes: controlling, by the control device, the imaging device to capture a reference image when the transfer device is located at a determination position directly above the processing tank; moving the transfer device from a reference position to the determination position; controlling the imaging device to capture a comparison video when and after the transfer device stops; and determining, based on the reference image and the comparison video, whether the lower end portion of the substrate holder protrudes outside a region where the opening is extended in a vertical direction, to determine that the test acceleration has an inappropriate value when the lower end portion protrudes outside the region.

To partially or locally control a plating film thickness on a polygonal substrate. There is provided a regulation plate for adjusting a current between an anode and the polygonal substrate. This regulation plate includes a main body that has an edge forming a polygonal opening through which the current passes and an attachable/detachable shielding member to shield at least a part of the polygonal opening.