C25D17/16

Methods and apparatuses for electroplating and seed layer detection

Disclosed herein are methods and apparatuses for electroplating which employ seed layer detection. Such methods and related apparatuses may operate by selecting a wafer for processing, measuring from its surface one or more in-process color signals having one or more color components, calculating one or more metrics, each metric indicative of the difference between one of the in-process color signals and a corresponding set of reference color signals, determining whether an acceptable seed layer is present on the wafer surface based on whether a predetermined number of the one or more metrics are within an associated predetermined range which individually corresponds to that metric, and either electroplating the wafer when an acceptable seed layer is present or otherwise designating the wafer unacceptable for electroplating. The foregoing may then be repeated for one or more additional wafers to electroplate multiple wafers from a set of wafers.

Methods and apparatuses for electroplating and seed layer detection

Disclosed herein are methods and apparatuses for electroplating which employ seed layer detection. Such methods and related apparatuses may operate by selecting a wafer for processing, measuring from its surface one or more in-process color signals having one or more color components, calculating one or more metrics, each metric indicative of the difference between one of the in-process color signals and a corresponding set of reference color signals, determining whether an acceptable seed layer is present on the wafer surface based on whether a predetermined number of the one or more metrics are within an associated predetermined range which individually corresponds to that metric, and either electroplating the wafer when an acceptable seed layer is present or otherwise designating the wafer unacceptable for electroplating. The foregoing may then be repeated for one or more additional wafers to electroplate multiple wafers from a set of wafers.

ANODE ACTIVE SUBSTANCE, PREPARATION METHOD THEREFOR, AND LITHIUM SECONDARY BATTERY PRODUCED THEREFROM

Provided in the embodiments of the present invention is an anode active substance for secondary batteries, which substance comprises a composite material. The composite material includes silicon particles, a ceramic material formed on at least some areas of the surface of the silicon particles, and a conductive carbon composite material formed on the ceramic material to cover the silicon particles and the ceramic material. In addition, further provided herein are a method for preparing an anode active substance and a lithium secondary battery prepared on the basis of the anode active substance.

ANODE ACTIVE SUBSTANCE, PREPARATION METHOD THEREFOR, AND LITHIUM SECONDARY BATTERY PRODUCED THEREFROM

Provided in the embodiments of the present invention is an anode active substance for secondary batteries, which substance comprises a composite material. The composite material includes silicon particles, a ceramic material formed on at least some areas of the surface of the silicon particles, and a conductive carbon composite material formed on the ceramic material to cover the silicon particles and the ceramic material. In addition, further provided herein are a method for preparing an anode active substance and a lithium secondary battery prepared on the basis of the anode active substance.

BARREL PLATING OR HIGH-SPEED ROTARY PLATING USING A NEUTRAL TIN PLATING SOLUTION

A barrel plating or high-speed rotary plating method for electronic components, and a neutral tin plating solution used therein. A plating solution that includes (A) stannous ions, (B) an acid or a salt, (C) a complexing agent, and (D) a diamine that has a polyoxyalkylene chain, and that has a pH in a range between 4 and 8 is used. The use of this neutral tin plating solution prevents the electronic components from coupling together during the barrel plating, enabling an improvement in manufacturability in barrel plating.

ELECTRICAL CONNECTOR ELECTROPLATING PROCESS
20180087171 · 2018-03-29 ·

An electrical connector electroplating process includes: performing a pre-treatment of an electrical connector to remove grease; performing an activation treatment of the electrical connector to activate an oxide film on a surface of the electrical connector; plating a layer of bottom coating on the surface of the electrical connector; plating a layer of silver film coating on a surface of the bottom coating; plating a layer of gold film coating on a surface of the silver film coating; plating a layer of platinum or rhodium film coating on a surface of the gold film coating; performing a post-treatment including surface pore sealing, water washing, and baking/drying of a surface of the platinum or rhodium film coating.

PROCESSES FOR PROVIDING LAMINATED COATINGS ON WORKPIECES, AND ARTICLES MADE THEREFROM
20180066375 · 2018-03-08 ·

Methods for providing laminated coatings on metal articles using electroplating methods such as barrel plating, vibratory plating, rocker plating or other non-rack methods that involve movement of articles to be plated in a containment apparatus, as well as articles made from such processes. Embodiments of such processes involve mass-transfer modulation to provide compositionally modulated coatings.

METAL PARTICLE AND METHOD FOR PRODUCING THE SAME, COVERED METAL PARTICLE, AND METAL POWDER
20180056451 · 2018-03-01 ·

A metal particle having a particle diameter of 10 m or more and 1000 m or less and includes Cu and trace elements and a total mass content of P and S, among other trace elements, is 3 ppm or more and 30 ppm or less. A method for producing a metal particle including producing a molten metal material by melting a metal material in a crucible, wherein Cu as determined in GDMS analysis is over 99.995% and a total of P and S is 3 ppm or more and 30 ppm or less; applying a pressure of 0.05 MPa or more and 1.0 MPa or less to drip the molten metal material through an orifice, thereby producing a molten metal droplet; and rapidly solidifying the molten metal droplet using an inert gas whose oxygen concentration is 1000 ppm or less.

METHODS AND APPARATUSES FOR ELECTROPLATING AND SEED LAYER DETECTION
20180038009 · 2018-02-08 ·

Disclosed herein are methods and apparatuses for electroplating which employ seed layer detection. Such methods and related apparatuses may operate by selecting a wafer for processing, measuring from its surface one or more in-process color signals having one or more color components, calculating one or more metrics, each metric indicative of the difference between one of the in-process color signals and a corresponding set of reference color signals, determining whether an acceptable seed layer is present on the wafer surface based on whether a predetermined number of the one or more metrics are within an associated predetermined range which individually corresponds to that metric, and either electroplating the wafer when an acceptable seed layer is present or otherwise designating the wafer unacceptable for electroplating. The foregoing may then be repeated for one or more additional wafers to electroplate multiple wafers from a set of wafers.

METHODS AND APPARATUSES FOR ELECTROPLATING AND SEED LAYER DETECTION
20180038009 · 2018-02-08 ·

Disclosed herein are methods and apparatuses for electroplating which employ seed layer detection. Such methods and related apparatuses may operate by selecting a wafer for processing, measuring from its surface one or more in-process color signals having one or more color components, calculating one or more metrics, each metric indicative of the difference between one of the in-process color signals and a corresponding set of reference color signals, determining whether an acceptable seed layer is present on the wafer surface based on whether a predetermined number of the one or more metrics are within an associated predetermined range which individually corresponds to that metric, and either electroplating the wafer when an acceptable seed layer is present or otherwise designating the wafer unacceptable for electroplating. The foregoing may then be repeated for one or more additional wafers to electroplate multiple wafers from a set of wafers.