A film formation apparatus includes an anode, a solid electrolyte membrane between the anode and a substrate, a power supply that applies voltage between the anode and the substrate as a cathode, and a liquid reservoir that holds the anode and the solid electrolyte membrane while separating them apart from each other, the liquid reservoir storing electrolyte solution including metal ions between the anode and the solid electrolyte membrane. The solid electrolyte membrane includes a central portion that comes in contact with the substrate and the electrolyte solution, and an outer edge portion outside the central portion. The apparatus includes a membrane tensioning mechanism to apply a tensile force to the central portion toward the outer edge portion while storing the heated electrolyte solution in the liquid reservoir, to elongate the central portion.

A film formation apparatus includes an anode, a solid electrolyte membrane between the anode and a substrate, a power supply that applies voltage between the anode and the substrate as a cathode, and a liquid reservoir that holds the anode and the solid electrolyte membrane while separating them apart from each other, the liquid reservoir storing electrolyte solution including metal ions between the anode and the solid electrolyte membrane. The solid electrolyte membrane includes a central portion that comes in contact with the substrate and the electrolyte solution, and an outer edge portion outside the central portion. The apparatus includes a membrane tensioning mechanism to apply a tensile force to the central portion toward the outer edge portion while storing the heated electrolyte solution in the liquid reservoir, to elongate the central portion.

A plating apparatus includes a processing bath configured to store a processing liquid therein, a transporter configured to immerse a substrate holder, holding a substrate, in the processing liquid, raise the substrate holder out of the processing bath, and transport the substrate holder in a horizontal direction, and a gas flow generator configured to generate a clean gas flow forward of the substrate with respect to a direction in which the substrate holder is transported. The transporter moves the gas flow generator together with the substrate holder in the horizontal direction while transporting the substrate holder in the horizontal direction.

A plating apparatus includes a processing bath configured to store a processing liquid therein, a transporter configured to immerse a substrate holder, holding a substrate, in the processing liquid, raise the substrate holder out of the processing bath, and transport the substrate holder in a horizontal direction, and a gas flow generator configured to generate a clean gas flow forward of the substrate with respect to a direction in which the substrate holder is transported. The transporter moves the gas flow generator together with the substrate holder in the horizontal direction while transporting the substrate holder in the horizontal direction.

An apparatus and method for a mandrel used during an electroforming process. The mandrel is formed of a structural wax and includes a metallic layer utilized to formulate a metal component. During the electroforming process, the mandrel is actively cooled utilizing a closed loop. The closed loop includes the mandrel and a heat exchanger through which a coolant flows.

An apparatus and method for a mandrel used during an electroforming process. The mandrel is formed of a structural wax and includes a metallic layer utilized to formulate a metal component. During the electroforming process, the mandrel is actively cooled utilizing a closed loop. The closed loop includes the mandrel and a heat exchanger through which a coolant flows.

This invention concerns a substrate holder reception apparatus (1) for clamping a substrate holder (11) in a substrate holder clamping direction (SHCD) in a predetermined position of the substrate holder (11) and releasing the substrate holder (11), comprising at least one substrate holder connection device (21) for mechanical aligning and electrically contacting of the substrate holder (11), wherein the substrate holder connection device (21) comprises a separate substrate holder alignment device (211) for aligning the substrate holder (11) with the substrate holder connection device (21) in an alignment direction, and a separate substrate holder contact device (212) for electrically contacting the substrate holder (11). Further, the invention concerns an electrochemical treatment apparatus (5) comprising the substrate holder reception apparatus (1).

This invention concerns a substrate holder reception apparatus (1) for clamping a substrate holder (11) in a substrate holder clamping direction (SHCD) in a predetermined position of the substrate holder (11) and releasing the substrate holder (11), comprising at least one substrate holder connection device (21) for mechanical aligning and electrically contacting of the substrate holder (11), wherein the substrate holder connection device (21) comprises a separate substrate holder alignment device (211) for aligning the substrate holder (11) with the substrate holder connection device (21) in an alignment direction, and a separate substrate holder contact device (212) for electrically contacting the substrate holder (11). Further, the invention concerns an electrochemical treatment apparatus (5) comprising the substrate holder reception apparatus (1).

Systems and methods for tin antimony plating are provided. One plating method includes doping a tin (Sn) plating solution with antimony (Sb). One method also includes electroplating a component using the antimony-doped tin plating. The antimony-doped tin plating formed by one method includes between about 1% and about 3% antimony.

Systems and methods for tin antimony plating are provided. One plating method includes doping a tin (Sn) plating solution with antimony (Sb). One method also includes electroplating a component using the antimony-doped tin plating. The antimony-doped tin plating formed by one method includes between about 1% and about 3% antimony.