Provided is a technique that ensures the suppressed deterioration of plating quality of a substrate due to air bubbles that remain on a surface to be plated of the substrate.

A plating apparatus 1000 includes a plating tank 10, a substrate holder 30, a rotation mechanism 40, and an elevating mechanism 50. The plating tank 10 is configured to accumulate a plating solution and include an anode 11 arranged inside the plating tank. The substrate holder 30 is arranged above the anode and configured to hold a substrate as a cathode such that a surface to be plated of the substrate faces downward. The substrate holder includes a ring 31 projecting below an outer peripheral edge of the surface to be plated of the substrate. The rotation mechanism 40 is configured to rotate the substrate holder. The elevating mechanism 50 is configured to elevate the substrate holder. The ring has a lower surface, and at least one protrusion 35 projecting toward a lower side is arranged on a part of the lower surface.

Provided is a technique that ensures the suppressed deterioration of plating quality of a substrate due to air bubbles that remain on a surface to be plated of the substrate.

A plating apparatus 1000 includes a plating tank 10, a substrate holder 30, a rotation mechanism 40, and an elevating mechanism 50. The plating tank 10 is configured to accumulate a plating solution and include an anode 11 arranged inside the plating tank. The substrate holder 30 is arranged above the anode and configured to hold a substrate as a cathode such that a surface to be plated of the substrate faces downward. The substrate holder includes a ring 31 projecting below an outer peripheral edge of the surface to be plated of the substrate. The rotation mechanism 40 is configured to rotate the substrate holder. The elevating mechanism 50 is configured to elevate the substrate holder. The ring has a lower surface, and at least one protrusion 35 projecting toward a lower side is arranged on a part of the lower surface.

An electroplating apparatus includes an electrode at the bottom of a chamber, an ionically resistive element with through holes arranged horizontally at the top of the chamber, with a membrane in the middle. One or more panels extend vertically and parallelly from the membrane to the element and extend linearly across the chamber, forming a plurality of regions between the membrane and the element. A substrate with a protuberance extending along a chord of the substrate and contacting a top surface of the element is arranged above a first region. An electrolyte flowed between the substrate and the element descends into the first region via the through holes on a first side of the protuberance and ascends from the first region via the through holes on a second side of the protuberance, forcing air bubbles out from a portion of the element associated with the first region.

An electroplating apparatus includes an electrode at the bottom of a chamber, an ionically resistive element with through holes arranged horizontally at the top of the chamber, with a membrane in the middle. One or more panels extend vertically and parallelly from the membrane to the element and extend linearly across the chamber, forming a plurality of regions between the membrane and the element. A substrate with a protuberance extending along a chord of the substrate and contacting a top surface of the element is arranged above a first region. An electrolyte flowed between the substrate and the element descends into the first region via the through holes on a first side of the protuberance and ascends from the first region via the through holes on a second side of the protuberance, forcing air bubbles out from a portion of the element associated with the first region.

A plating module includes a plating tank, a substrate holder, an elevating mechanism, an anode, an ionically resistive element, a supply pipe, and a bypass pipe. The substrate holder is for holding a substrate Wf with a surface to be plated Wf-a facing downward. The elevating mechanism is for moving up and down the substrate holder. The anode is disposed inside the plating tank so as to face the substrate Wf held by the substrate holder. The ionically resistive element is disposed between the anode and the substrate Wf. The supply pipe is for supplying a process liquid stored in a reservoir tank from a lower side of the ionically resistive element to the plating tank. The bypass pipe is for discharging the process liquid supplied to the plating tank via the supply pipe from the lower side of the ionically resistive element to the reservoir tank.

A plating module includes a plating tank, a substrate holder, an elevating mechanism, an anode, an ionically resistive element, a supply pipe, and a bypass pipe. The substrate holder is for holding a substrate Wf with a surface to be plated Wf-a facing downward. The elevating mechanism is for moving up and down the substrate holder. The anode is disposed inside the plating tank so as to face the substrate Wf held by the substrate holder. The ionically resistive element is disposed between the anode and the substrate Wf. The supply pipe is for supplying a process liquid stored in a reservoir tank from a lower side of the ionically resistive element to the plating tank. The bypass pipe is for discharging the process liquid supplied to the plating tank via the supply pipe from the lower side of the ionically resistive element to the reservoir tank.

Systems and methods for automated electroplating are disclosed. An electroplating system includes a first chamber configured to receive one or more parts. The first chamber includes a vessel extending from a first end to a second end, a first cap proximate to the first end a first cathode contact coupled to the first end, a second cathode contact coupled to the second end, and a plurality of anodes formed on an inner surface of the vessel. The electroplating system further includes at least one reservoir and a first conduit and a second conduit each coupled between the at least one reservoir and the first chamber. The first conduit may be configured to transfer fluid from the first reservoir to the first chamber and the second conduit may be configured to transfer fluid from the first chamber to the at least one reservoir.

Systems and methods for automated electroplating are disclosed. An electroplating system includes a first chamber configured to receive one or more parts. The first chamber includes a vessel extending from a first end to a second end, a first cap proximate to the first end a first cathode contact coupled to the first end, a second cathode contact coupled to the second end, and a plurality of anodes formed on an inner surface of the vessel. The electroplating system further includes at least one reservoir and a first conduit and a second conduit each coupled between the at least one reservoir and the first chamber. The first conduit may be configured to transfer fluid from the first reservoir to the first chamber and the second conduit may be configured to transfer fluid from the first chamber to the at least one reservoir.

An objective of the present invention is to prevent a prewetting liquid from remaining in an edge portion of a substrate. A plating method for subjecting a substrate to a plating treatment is provided, the substrate including a part to be plated that is exposed to a plating solution and an edge portion that is an outer region of the part to be plated. The plating method includes a first sealing step of bringing a first seal body into contact with the substrate to seal the edge portion of the substrate, a prewetting step of subjecting the sealed substrate to a prewetting treatment, a first seal removing step of removing the first seal body from the prewetted substrate, a substrate holding step of holding the substrate with a substrate holder including a second seal body, and a plating step of applying the plating solution to the substrate held by the substrate holder.

A semiconductor apparatus and methods of processing a semiconductor workpiece are provided. The semiconductor apparatus for pre-wetting a semiconductor workpiece includes a process chamber, a workpiece holder disposed within the process chamber to hold the semiconductor workpiece, a pre-wetting fluid tank disposed outside the process chamber and containing a pre-wetting fluid, and a conduit coupled to the pre-wetting fluid tank and extending into the process chamber. The conduit delivers the pre-wetting fluid from the pre-wetting fluid tank out through an outlet of the conduit to wet a major surface of the semiconductor workpiece comprising a plurality of recess portions.