An example electroplating method comprises feeding fresh electrolyte solution into a bath reservoir via a first inlet of the bath reservoir, and bleeding used electrolyte solution out of the bath reservoir via first outlet of the bath reservoir. Recycled electrolyte solution is received into the bath reservoir via a second inlet of the bath reservoir, and electrolyte solution is discharged from the bath reservoir via a second outlet of the bath reservoir. By-products generated by a plating cell are extracted using an extraction column. A first particle filter is disposed in a fluid pathway between the second outlet of the bath reservoir and the inlet of the plating cell, and a second particle filter is disposed in a fluid pathway between the outlet of the extraction column and the second inlet of the bath reservoir. Flow control means are disposed between the plating cell and the bath reservoir and selectively return a portion of the electrolyte solution to the bath reservoir without passing the returned portion through the first or second filter.

Tungsten-containing metal films may be deposited in recessed features of semiconductor substrates by electrodeposition. The tungsten-containing metal film is electrodeposited under conditions so that the tunsten-containing metal film is free or substantially free of oxide. Conditions are optimized during electrodeposition for pH, tungsten concentration, and current density, among other parameters. The tungsten-containing metal film may include cobalt tungsten alloy, cobalt nickel tungsten alloy, or nickel tungsten alloy, where a tungsten content in the tungsten-containing metal film is between about 1-20 atomic %.

Disclosed herein is an electrolytic copper foil including a copper layer, wherein the copper layer includes a (220) surface, and an orientation index M(220) of the (220) surface is one or more.

Disclosed herein is an electrolytic copper foil including a copper layer, wherein the copper layer includes a (220) surface, and an orientation index M(220) of the (220) surface is one or more.

A debris cleaning device includes: a process treatment tank for containing a liquid medicine and a substrate to be treated, wherein the bottom of the tank body of the process treatment tank is provided with a liquid medicine discharge port, and the side wall of the tank body of the process treatment tank is provided with a liquid medicine inlet port; and a self-circulation debris removal system, the self-circulation debris removal system comprising a circulation pipeline communicating between the liquid medicine discharge port and the liquid medicine inlet port, the circulation pipeline being provided with a control valve for controlling the on-off state of the circulation pipeline, a debris filtering and collecting device for filtering the debris in the circulation pipeline, and a power pump for providing circulation driving force for the liquid medicine in the circulation pipeline.

A debris cleaning device includes: a process treatment tank for containing a liquid medicine and a substrate to be treated, wherein the bottom of the tank body of the process treatment tank is provided with a liquid medicine discharge port, and the side wall of the tank body of the process treatment tank is provided with a liquid medicine inlet port; and a self-circulation debris removal system, the self-circulation debris removal system comprising a circulation pipeline communicating between the liquid medicine discharge port and the liquid medicine inlet port, the circulation pipeline being provided with a control valve for controlling the on-off state of the circulation pipeline, a debris filtering and collecting device for filtering the debris in the circulation pipeline, and a power pump for providing circulation driving force for the liquid medicine in the circulation pipeline.

A semiconductor package, a redistribution structure and a method for forming the same are provided. The redistribution structure for coupling an encapsulated die is provided, the redistribution structure includes a conductive pattern disposed over and electrically coupled to the encapsulated die. The conductive pattern extends beyond an edge of the encapsulated die along a first extending direction which intersects a second extending direction of the edge of the encapsulated die by an angle in a top view, and an impurity concentration of sulfur in the conductive pattern is less than about 0.1 ppm.

A semiconductor package, a redistribution structure and a method for forming the same are provided. The redistribution structure for coupling an encapsulated die is provided, the redistribution structure includes a conductive pattern disposed over and electrically coupled to the encapsulated die. The conductive pattern extends beyond an edge of the encapsulated die along a first extending direction which intersects a second extending direction of the edge of the encapsulated die by an angle in a top view, and an impurity concentration of sulfur in the conductive pattern is less than about 0.1 ppm.

A method of forming a corrosion-resistant ceramic coating on a metallic substrate, the method comprising providing a passivation layer on a surface of the metallic substrate by electrochemical passivation of the metallic substrate under a first electrical current and using a first electrically conducting solution; and providing the corrosion-resistant ceramic coating on an outermost surface of the metallic substrate, the outermost surface in use adapted to be exposed to a corrosive environment, by plasma electrolytic oxidation of the metallic substrate with the passivation layer, in a second electrically conducting solution and under a second electrical current having a discharge voltage. The first and the second electrically conducting solutions comprise a tetrafluoroborate compound.

A method of forming a corrosion-resistant ceramic coating on a metallic substrate, the method comprising providing a passivation layer on a surface of the metallic substrate by electrochemical passivation of the metallic substrate under a first electrical current and using a first electrically conducting solution; and providing the corrosion-resistant ceramic coating on an outermost surface of the metallic substrate, the outermost surface in use adapted to be exposed to a corrosive environment, by plasma electrolytic oxidation of the metallic substrate with the passivation layer, in a second electrically conducting solution and under a second electrical current having a discharge voltage. The first and the second electrically conducting solutions comprise a tetrafluoroborate compound.