A method which can perform a soft pre-wetting treatment of a substrate, such as a wafer, with use of a pre-wetting liquid in a smaller amount. This method includes: holding a substrate between a first holding member and a second holding member, with the surface of the substrate being exposed through an opening of the second holding member, and pressing a sealing ridge of the substrate holder against a peripheral portion of the substrate; pressing a sealing block against the substrate holder; forming a vacuum in an external space; performing a seal inspection to check a sealed state provided by the sealing ridge based on a change in pressure in the external space; and performing a pre-wetting treatment by supplying a pre-wetting liquid to the external space while evacuating air from the external space to bring the pre-wetting liquid into contact with the exposed surface of the substrate.

A method which can perform a soft pre-wetting treatment of a substrate, such as a wafer, with use of a pre-wetting liquid in a smaller amount. This method includes: holding a substrate between a first holding member and a second holding member, with the surface of the substrate being exposed through an opening of the second holding member, and pressing a sealing ridge of the substrate holder against a peripheral portion of the substrate; pressing a sealing block against the substrate holder; forming a vacuum in an external space; performing a seal inspection to check a sealed state provided by the sealing ridge based on a change in pressure in the external space; and performing a pre-wetting treatment by supplying a pre-wetting liquid to the external space while evacuating air from the external space to bring the pre-wetting liquid into contact with the exposed surface of the substrate.

Methods and apparatus for reducing the formation of insoluble deposits in semiconductor electrochemical plating equipment or a surface thereof during electrochemical plating, including: removing electrochemical plating equipment or a surface thereof from an electroplating solution, wherein residual electroplating solution is disposed atop the electrochemical plating equipment or a surface thereof, and wherein the residual electroplating solution has a first pH; contacting the residual electroplating solution with a rinse agent having a second pH similar to the first pH to form a rinsate; and removing the rinsate from the electrochemical plating equipment or a surface thereof.

Methods and apparatus for reducing the formation of insoluble deposits in semiconductor electrochemical plating equipment or a surface thereof during electrochemical plating, including: removing electrochemical plating equipment or a surface thereof from an electroplating solution, wherein residual electroplating solution is disposed atop the electrochemical plating equipment or a surface thereof, and wherein the residual electroplating solution has a first pH; contacting the residual electroplating solution with a rinse agent having a second pH similar to the first pH to form a rinsate; and removing the rinsate from the electrochemical plating equipment or a surface thereof.

Cleaning substrates or electroplating system components may include methods of rinsing a substrate at a semiconductor plating chamber. The methods may include moving a head from a plating bath to a first position. The head may include a substrate coupled with the head. The methods may include rotating the head for a first period of time to sling bath fluid back into the plating bath. A residual amount of bath fluid may remain. The methods may include delivering a first fluid to the substrate from a first fluid nozzle to at least partially expel the residual amount of bath fluid back into the plating bath. The methods may include moving the head to a second position. The methods may include rotating the head for a second period of time. The methods may also include delivering a second fluid across the substrate from a second fluid nozzle.

Cleaning substrates or electroplating system components may include methods of rinsing a substrate at a semiconductor plating chamber. The methods may include moving a head from a plating bath to a first position. The head may include a substrate coupled with the head. The methods may include rotating the head for a first period of time to sling bath fluid back into the plating bath. A residual amount of bath fluid may remain. The methods may include delivering a first fluid to the substrate from a first fluid nozzle to at least partially expel the residual amount of bath fluid back into the plating bath. The methods may include moving the head to a second position. The methods may include rotating the head for a second period of time. The methods may also include delivering a second fluid across the substrate from a second fluid nozzle.

A method of controlling chemical concentration in electrolyte includes measuring the chemical concentration in the electrolyte in a tank, wherein an end of an exhaust pipe is connected to a top of the tank; determining, by a valve moved along a top surface of the tank, a vapor flux through the exhaust pipe based on the measured chemical concentration; rotating, by using a motor connected to a ball screw connected to the valve, the ball screw to move a gate of the valve based on the determined vapor flux; electroplating, using the electrolyte provided by the tank, wafers respectively in a plurality of electroplating cells that are connected to the tank; and recycling the electrolyte to the tank.

A method of controlling chemical concentration in electrolyte includes measuring the chemical concentration in the electrolyte in a tank, wherein an end of an exhaust pipe is connected to a top of the tank; determining, by a valve moved along a top surface of the tank, a vapor flux through the exhaust pipe based on the measured chemical concentration; rotating, by using a motor connected to a ball screw connected to the valve, the ball screw to move a gate of the valve based on the determined vapor flux; electroplating, using the electrolyte provided by the tank, wafers respectively in a plurality of electroplating cells that are connected to the tank; and recycling the electrolyte to the tank.

Systems for cleaning electroplating system components may include a seal cleaning assembly incorporated with an electroplating system. The seal cleaning assembly may include an arm pivotable between a first position and a second position. The arm may be rotatable about a central axis of the arm. The seal cleaning assembly may also include a cleaning head including a bracket portion coupled with a distal portion of the arm. The cleaning head may be characterized by a front portion formed to interface with a seal of the electroplating apparatus. The cleaning head may define a trench along the front portion, and the cleaning head may define a plurality of fluid channels through the cleaning head, each fluid channel of the plurality of fluid channels fluidly accessing a backside of the trench.

Systems for cleaning electroplating system components may include a seal cleaning assembly incorporated with an electroplating system. The seal cleaning assembly may include an arm pivotable between a first position and a second position. The arm may be rotatable about a central axis of the arm. The seal cleaning assembly may also include a cleaning head including a bracket portion coupled with a distal portion of the arm. The cleaning head may be characterized by a front portion formed to interface with a seal of the electroplating apparatus. The cleaning head may define a trench along the front portion, and the cleaning head may define a plurality of fluid channels through the cleaning head, each fluid channel of the plurality of fluid channels fluidly accessing a backside of the trench.