C25D21/08

Systems and methods for enclosed electroplating chambers

Systems and methods for automated electroplating are disclosed. An electroplating system includes a first chamber configured to receive one or more parts. The first chamber includes a vessel extending from a first end to a second end, a first cap proximate to the first end a first cathode contact coupled to the first end, a second cathode contact coupled to the second end, and a plurality of anodes formed on an inner surface of the vessel. The electroplating system further includes at least one reservoir and a first conduit and a second conduit each coupled between the at least one reservoir and the first chamber. The first conduit may be configured to transfer fluid from the first reservoir to the first chamber and the second conduit may be configured to transfer fluid from the first chamber to the at least one reservoir.

Systems and methods for enclosed electroplating chambers

Systems and methods for automated electroplating are disclosed. An electroplating system includes a first chamber configured to receive one or more parts. The first chamber includes a vessel extending from a first end to a second end, a first cap proximate to the first end a first cathode contact coupled to the first end, a second cathode contact coupled to the second end, and a plurality of anodes formed on an inner surface of the vessel. The electroplating system further includes at least one reservoir and a first conduit and a second conduit each coupled between the at least one reservoir and the first chamber. The first conduit may be configured to transfer fluid from the first reservoir to the first chamber and the second conduit may be configured to transfer fluid from the first chamber to the at least one reservoir.

Cleaning device for cleaning electroplating substrate holder

A cleaning device for removing contamination on a substrate holder used with an electroplating cell includes an arm, a cleaning agent supplier, a nozzle and a receiver. The cleaning agent supplier is coupled to the arm and configured to supply a cleaning agent. The nozzle is coupled to the cleaning agent supplier and configured to spray the cleaning agent onto the substrate holder to remove the contamination. The receiver is coupled to the arm and configured to receive the cleaning agent after the cleaning agent is sprayed onto the substrate holder.

Cleaning device for cleaning electroplating substrate holder

A cleaning device for removing contamination on a substrate holder used with an electroplating cell includes an arm, a cleaning agent supplier, a nozzle and a receiver. The cleaning agent supplier is coupled to the arm and configured to supply a cleaning agent. The nozzle is coupled to the cleaning agent supplier and configured to spray the cleaning agent onto the substrate holder to remove the contamination. The receiver is coupled to the arm and configured to receive the cleaning agent after the cleaning agent is sprayed onto the substrate holder.

METHODS OF REDUCING OR ELIMINATING DEPOSITS AFTER ELECTROCHEMICAL PLATING IN AN ELECTROPLATING PROCESSOR

Methods and apparatus for reducing the formation of insoluble deposits in semiconductor electrochemical plating equipment or a surface thereof during electrochemical plating, including: removing electrochemical plating equipment or a surface thereof from an electroplating solution, wherein residual electroplating solution is disposed atop the electrochemical plating equipment or a surface thereof, and wherein the residual electroplating solution has a first pH; contacting the residual electroplating solution with a rinse agent having a second pH similar to the first pH to form a rinsate; and removing the rinsate from the electrochemical plating equipment or a surface thereof.

METHODS OF REDUCING OR ELIMINATING DEPOSITS AFTER ELECTROCHEMICAL PLATING IN AN ELECTROPLATING PROCESSOR

Methods and apparatus for reducing the formation of insoluble deposits in semiconductor electrochemical plating equipment or a surface thereof during electrochemical plating, including: removing electrochemical plating equipment or a surface thereof from an electroplating solution, wherein residual electroplating solution is disposed atop the electrochemical plating equipment or a surface thereof, and wherein the residual electroplating solution has a first pH; contacting the residual electroplating solution with a rinse agent having a second pH similar to the first pH to form a rinsate; and removing the rinsate from the electrochemical plating equipment or a surface thereof.

FLUID RECOVERY IN SEMICONDUCTOR PROCESSING

Exemplary electroplating apparatuses may include a system head operable to clamp a substrate. The system head may be operable to raise and lower the substrate between a plating bath, a first position above the plating bath, and a second position above the first position. The electroplating apparatuses may include a plating bath vessel adapted to hold the plating bath for electroplating on the substrate. The electroplating apparatuses may include a weir extending about the plating bath vessel. The electroplating apparatuses may include a first nozzle extending through the weir at a first radial position, and positioned to deliver fluid to the substrate at the first position above the plating bath. The electroplating apparatuses may include a second nozzle extending through the weir at a second radial position, and positioned to deliver fluid to the substrate at the second position above the plating bath.

FLUID RECOVERY IN SEMICONDUCTOR PROCESSING

Exemplary electroplating apparatuses may include a system head operable to clamp a substrate. The system head may be operable to raise and lower the substrate between a plating bath, a first position above the plating bath, and a second position above the first position. The electroplating apparatuses may include a plating bath vessel adapted to hold the plating bath for electroplating on the substrate. The electroplating apparatuses may include a weir extending about the plating bath vessel. The electroplating apparatuses may include a first nozzle extending through the weir at a first radial position, and positioned to deliver fluid to the substrate at the first position above the plating bath. The electroplating apparatuses may include a second nozzle extending through the weir at a second radial position, and positioned to deliver fluid to the substrate at the second position above the plating bath.

Method of controlling chemical concentration in electrolyte and semiconductor apparatus

A method of controlling chemical concentration in electrolyte includes measuring a chemical concentration in an electrolyte, wherein the electrolyte is contained in a tank; and increasing a vapor flux through an exhaust pipe connected to the tank when the measured chemical concentration is lower than a control lower limit value.

Method of controlling chemical concentration in electrolyte and semiconductor apparatus

A method of controlling chemical concentration in electrolyte includes measuring a chemical concentration in an electrolyte, wherein the electrolyte is contained in a tank; and increasing a vapor flux through an exhaust pipe connected to the tank when the measured chemical concentration is lower than a control lower limit value.