A film plating machine and electroplating production line are provided. The film plating machine has a plating solution tank, conductive substrate film conveying devices and a power supply. A plating solution and an anode member are provided in the plating solution tank. The conductive substrate film conveying devices are provided at both sides of the plating solution tank and configured to clamp two opposite side edges of a horizontally-placed conductive substrate film and drive the conductive substrate film to horizontally enter and exit the plating solution tank in a first direction. A positive electrode of the power supply is electrically connected with the anode member, and a negative electrode of the power supply is electrically connected with the conductive substrate film through the conductive substrate film conveying devices.

A film plating machine and electroplating production line are provided. The film plating machine has a plating solution tank, conductive substrate film conveying devices and a power supply. A plating solution and an anode member are provided in the plating solution tank. The conductive substrate film conveying devices are provided at both sides of the plating solution tank and configured to clamp two opposite side edges of a horizontally-placed conductive substrate film and drive the conductive substrate film to horizontally enter and exit the plating solution tank in a first direction. A positive electrode of the power supply is electrically connected with the anode member, and a negative electrode of the power supply is electrically connected with the conductive substrate film through the conductive substrate film conveying devices.

There is provided a substrate holder configured to hold a substrate such that the substrate is exposed to and is brought into contact with a plating solution to be plated. The substrate holder comprises a contact that comes into contact with a seed layer formed on a surface of the substrate to feed electricity; a protective electrode that is biased to a higher potential side relative to the contact or that comprises a material having a lower spontaneous potential than a spontaneous potential of the seed layer and that is electrically connected with the seed layer directly or via an electrical conductor; and a holder main body provided with an internal space being configured to place therein an outer circumferential portion of the substrate, the contact and the protective electrode such as to be sealed from outside of the substrate holder in a state that the substrate is held by the substrate holder and configured to store therein a liquid that covers at least part of the protective electrode and at least a contact location between the seed layer and the contact.

There is provided a substrate holder configured to hold a substrate such that the substrate is exposed to and is brought into contact with a plating solution to be plated. The substrate holder comprises a contact that comes into contact with a seed layer formed on a surface of the substrate to feed electricity; a protective electrode that is biased to a higher potential side relative to the contact or that comprises a material having a lower spontaneous potential than a spontaneous potential of the seed layer and that is electrically connected with the seed layer directly or via an electrical conductor; and a holder main body provided with an internal space being configured to place therein an outer circumferential portion of the substrate, the contact and the protective electrode such as to be sealed from outside of the substrate holder in a state that the substrate is held by the substrate holder and configured to store therein a liquid that covers at least part of the protective electrode and at least a contact location between the seed layer and the contact.

Methods and apparatus for reducing the formation of insoluble deposits in semiconductor electrochemical plating equipment or a surface thereof during electrochemical plating, including: removing electrochemical plating equipment or a surface thereof from an electroplating solution, wherein residual electroplating solution is disposed atop the electrochemical plating equipment or a surface thereof, and wherein the residual electroplating solution has a first pH; contacting the residual electroplating solution with a rinse agent having a second pH similar to the first pH to form a rinsate; and removing the rinsate from the electrochemical plating equipment or a surface thereof.

Methods and apparatus for reducing the formation of insoluble deposits in semiconductor electrochemical plating equipment or a surface thereof during electrochemical plating, including: removing electrochemical plating equipment or a surface thereof from an electroplating solution, wherein residual electroplating solution is disposed atop the electrochemical plating equipment or a surface thereof, and wherein the residual electroplating solution has a first pH; contacting the residual electroplating solution with a rinse agent having a second pH similar to the first pH to form a rinsate; and removing the rinsate from the electrochemical plating equipment or a surface thereof.

A cleaning apparatus is provided. This cleaning apparatus includes an inlet, an outlet, a first conveyance path, a second conveyance path, a cleaning unit disposed on the first conveyance path and configured to clean the target object in a non-contacting manner, and a drying unit disposed on the first conveyance path and configured to dry the target object in a non-contacting manner. The first conveyance path and the second conveyance path are vertically arranged side by side. The second conveyance path is positioned above the first conveyance path and connected with the outlet at an end point. The second conveyance path functions as a stocker configured to temporarily store the target object.

A cleaning apparatus is provided. This cleaning apparatus includes an inlet, an outlet, a first conveyance path, a second conveyance path, a cleaning unit disposed on the first conveyance path and configured to clean the target object in a non-contacting manner, and a drying unit disposed on the first conveyance path and configured to dry the target object in a non-contacting manner. The first conveyance path and the second conveyance path are vertically arranged side by side. The second conveyance path is positioned above the first conveyance path and connected with the outlet at an end point. The second conveyance path functions as a stocker configured to temporarily store the target object.

Plating bath and well structures and methods are described to stop the organic compounds present in plating reservoir wells or bath solution from rising, i.e., climbing up the reservoir wall. An electroplating apparatus includes a vessel holding a liquid solution including metal plating material and an organic species, and a method of operating an electroplating apparatus. The apparatus is designed with plating bath and structures and methods to stop the organic compounds present in plating reservoir wells or bath solution from rising, i.e., climbing or wicking up the inner surfaces of reservoir walls, and to wash them back down on a continuous or cyclical basis in order to maintain a concentration of organic compounds in the plating solution within upper and lower specification limits.

Plating bath and well structures and methods are described to stop the organic compounds present in plating reservoir wells or bath solution from rising, i.e., climbing up the reservoir wall. An electroplating apparatus includes a vessel holding a liquid solution including metal plating material and an organic species, and a method of operating an electroplating apparatus. The apparatus is designed with plating bath and structures and methods to stop the organic compounds present in plating reservoir wells or bath solution from rising, i.e., climbing or wicking up the inner surfaces of reservoir walls, and to wash them back down on a continuous or cyclical basis in order to maintain a concentration of organic compounds in the plating solution within upper and lower specification limits.