The invention eliminates defects generated in a metal filling a through hole of a printed board by changing an angle at which a plating solution is sprayed or by changing a posture of the printed board at a time point in a process of precipitating the metal from the plating solution and filling the through hole with the precipitated metal while the plating solution or air bubbles are being sprayed onto the printed board.

The invention eliminates defects generated in a metal filling a through hole of a printed board by changing an angle at which a plating solution is sprayed or by changing a posture of the printed board at a time point in a process of precipitating the metal from the plating solution and filling the through hole with the precipitated metal while the plating solution or air bubbles are being sprayed onto the printed board.

A method includes: agitating base members that has been immersed in an electrolytic solution inside of an electroplating tank so as to flow in a circumference direction along an inner wall of the electroplating tank; and electroplating the base members flowing along the circumference direction in the electrolytic solution inside of the electroplating tank. The flow of the base members along the circumference direction is caused by a flow of magnetic media along the circumference direction in the electrolytic solution inside of the electroplating tank or is caused by rotation of an agitation unit provided at a bottom side of the electroplating tank. At least one of the base members touches a bottom cathode, and a base member positioned upward relative to the base member touching the bottom cathode is electrically connected to the bottom cathode via at least the base member touching the bottom cathode.

An apparatus for electrochemically processing a semiconductor substrate includes a processing chamber of the type that is sealable to a peripheral portion of a semiconductor substrate so as to define a covered processing volume. The semiconductor substrate is supported by a substrate support. A magnetic arrangement is disposed outside of the processing chamber and produces a magnetic field. The magnetic field is changed using a controller for controlling the magnetic arrangement. An agitator is disposed within the processing chamber. The agitator comprises a magnetically responsive element which is responsive to changes in the magnetic field of the magnetic arrangement so as to provide a reciprocating motion to the agitator.

An apparatus for electrochemically processing a semiconductor substrate includes a processing chamber of the type that is sealable to a peripheral portion of a semiconductor substrate so as to define a covered processing volume. The semiconductor substrate is supported by a substrate support. A magnetic arrangement is disposed outside of the processing chamber and produces a magnetic field. The magnetic field is changed using a controller for controlling the magnetic arrangement. An agitator is disposed within the processing chamber. The agitator comprises a magnetically responsive element which is responsive to changes in the magnetic field of the magnetic arrangement so as to provide a reciprocating motion to the agitator.

A plating method which can achieve a desired dome height is disclosed. The method includes: preparing correlation data showing a relationship between proportion of dome height to bump height and concentration of chloride ions; producing a plating solution containing chloride ions at a concentration which has been selected based on a desired proportion of dome height to bump height and on the correlation data, the selected concentration being in a range of 100 mg/dm.sup.3 to 300 mg/dm.sup.3; immersing a substrate in the plating solution; and passing an electric current between an anode and the substrate, both immersed in the plating solution, thereby plating the substrate to form bumps.

A plating method which can achieve a desired dome height is disclosed. The method includes: preparing correlation data showing a relationship between proportion of dome height to bump height and concentration of chloride ions; producing a plating solution containing chloride ions at a concentration which has been selected based on a desired proportion of dome height to bump height and on the correlation data, the selected concentration being in a range of 100 mg/dm.sup.3 to 300 mg/dm.sup.3; immersing a substrate in the plating solution; and passing an electric current between an anode and the substrate, both immersed in the plating solution, thereby plating the substrate to form bumps.

The uniformity of electroplating a metal (e.g., copper) on a semiconductor wafer is improved by using an electroplating apparatus having a flow-shaping element positioned in the proximity of the semiconductor wafer, wherein the flow-shaping element is made of a resistive material and has two types of non-communicating channels made through the resistive material, such that the electrolyte is transported towards the substrate through both types of channels. The first type of channels is not perpendicular to the plane defined by a plating face of the substrate. The second type of channels is perpendicular to the plane defined by the plating face of the substrate. The channels of the first and second type are substantially spatially segregated. In one embodiment a plurality of channels of the first type are located in the central portion of the flow-shaping element and are surrounded by a plurality of channels of the second type.

The uniformity of electroplating a metal (e.g., copper) on a semiconductor wafer is improved by using an electroplating apparatus having a flow-shaping element positioned in the proximity of the semiconductor wafer, wherein the flow-shaping element is made of a resistive material and has two types of non-communicating channels made through the resistive material, such that the electrolyte is transported towards the substrate through both types of channels. The first type of channels is not perpendicular to the plane defined by a plating face of the substrate. The second type of channels is perpendicular to the plane defined by the plating face of the substrate. The channels of the first and second type are substantially spatially segregated. In one embodiment a plurality of channels of the first type are located in the central portion of the flow-shaping element and are surrounded by a plurality of channels of the second type.

A method for subjecting garment accessories to a surface electrolytic treatment provides various metallic colors to metallic garment accessories in a cost effective manner. The method can provide a first metallic color on one side of outer surface of the garment accessory and provide a second metallic color on the other side of the outer surface, by placing one or more metallic garment accessories in an electrolytic solution in a non-contact state with an anode and a cathode for passing electric current through the electrolytic solution, passing electric current through the electrolytic solution and generating a bipolar phenomenon on the garment accessory.