A method and system for improving uniformity of plating film on the wafer are provided. The method includes: providing a plating device; providing a wafer, the plating device being configured to coat the wafer; monitoring currents at different areas of a surface of the wafer in a plating process; when a difference between the currents at the different areas of the surface of the wafer is greater than a preset difference, inspecting the plating device; and when an attachment is present on the plating device, cleaning the plating device.

A method and system for improving uniformity of plating film on the wafer are provided. The method includes: providing a plating device; providing a wafer, the plating device being configured to coat the wafer; monitoring currents at different areas of a surface of the wafer in a plating process; when a difference between the currents at the different areas of the surface of the wafer is greater than a preset difference, inspecting the plating device; and when an attachment is present on the plating device, cleaning the plating device.

In one example, an electroplating system comprises a first bath reservoir, a second bath reservoir, a clamp, a first anode in the first bath reservoir, a second anode in the second bath reservoir, and a direct current power supply. The first bath reservoir contains a first electrolyte solution that includes an alkaline copper-complexed solution. The second bath reservoir contains a second electrolyte solution that includes an acidic copper plating solution. The direct current power supply generates a first direct current between the clamp and the first anode to electroplate a first copper layer on the cobalt layer of the wafer submerged in the first electrolyte solution. The direct current power supply then generates a second direct current between the clamp and the second anode to electroplate a second copper layer on the first copper layer of the wafer submerged in the second electrolyte solution.

Electroplating systems may include an electroplating chamber. The systems may also include a replenish assembly fluidly coupled with the electroplating chamber. The replenish assembly may include a first compartment housing anode material. The first compartment may include a first compartment section in which the anode material is housed and a second compartment section separated from the first compartment section by a divider. The replenish assembly may include a second compartment fluidly coupled with the electroplating chamber and electrically coupled with the first compartment. The replenish assembly may also include a third compartment electrically coupled with the second compartment, the third compartment including an inert cathode.

Electroplating systems may include an electroplating chamber. The systems may also include a replenish assembly fluidly coupled with the electroplating chamber. The replenish assembly may include a first compartment housing anode material. The first compartment may include a first compartment section in which the anode material is housed and a second compartment section separated from the first compartment section by a divider. The replenish assembly may include a second compartment fluidly coupled with the electroplating chamber and electrically coupled with the first compartment. The replenish assembly may also include a third compartment electrically coupled with the second compartment, the third compartment including an inert cathode.

An electroplating apparatus for electroplating metal on a substrate includes a plating chamber configured to contain an electrolyte, a substrate holder configured to hold and rotate the substrate during electroplating, an anode, and an azimuthally asymmetric auxiliary electrode configured to be biased both anodically and cathodically during electroplating. The azimuthally asymmetric auxiliary electrode (which may be, for example, C-shaped), can be used for controlling azimuthal uniformity of metal electrodeposition by donating and diverting ionic current at a selected azimuthal position. In another aspect, an electroplating apparatus for electroplating metal includes a plating chamber configured to contain an electrolyte, a substrate holder configured to hold and rotate the substrate during electroplating, an anode, a shield configured to shield current at the periphery of the substrate; and an azimuthally asymmetric auxiliary anode configured to donate current to the shielded periphery of the substrate at a selected azimuthal position on the substrate.

An electroplating apparatus for electroplating metal on a substrate includes a plating chamber configured to contain an electrolyte, a substrate holder configured to hold and rotate the substrate during electroplating, an anode, and an azimuthally asymmetric auxiliary electrode configured to be biased both anodically and cathodically during electroplating. The azimuthally asymmetric auxiliary electrode (which may be, for example, C-shaped), can be used for controlling azimuthal uniformity of metal electrodeposition by donating and diverting ionic current at a selected azimuthal position. In another aspect, an electroplating apparatus for electroplating metal includes a plating chamber configured to contain an electrolyte, a substrate holder configured to hold and rotate the substrate during electroplating, an anode, a shield configured to shield current at the periphery of the substrate; and an azimuthally asymmetric auxiliary anode configured to donate current to the shielded periphery of the substrate at a selected azimuthal position on the substrate.

Nanotwinned copper and non-nanotwinned copper may be electroplated to form mixed crystal structures such as 2-in-1 copper via and RDL structures or 2-in-1 copper via and pillar structures. Nanotwinned copper may be electroplated on a non-nanotwinned copper layer by pretreating a surface of the non-nanotwinned copper layer with an oxidizing agent or other chemical reagent. Alternatively, nanotwinned copper may be electroplated to partially fill a recess in a dielectric layer, and non-nanotwinned copper may be electroplated over the nanotwinned copper to fill the recess. Copper overburden may be subsequently removed.

Disclosed is a method for preparing a carbon material, comprising applying a voltage to an electrically conductive medium to form an electrically conductive path in an oxygen-free environment containing a carbon source and a catalyst to obtain the carbon material, wherein the electrically conductive medium includes a solid substrate or a liquid-phase electrically conductive system; under the condition that the electrically conductive medium is the liquid-phase electrically conductive system, the carbon material is obtained in the liquid-phase electrically conductive system; and under the condition that the electrically conductive medium is the solid substrate, the carbon material is obtained on a surface of the solid substrate.

Disclosed is a method for preparing a carbon material, comprising applying a voltage to an electrically conductive medium to form an electrically conductive path in an oxygen-free environment containing a carbon source and a catalyst to obtain the carbon material, wherein the electrically conductive medium includes a solid substrate or a liquid-phase electrically conductive system; under the condition that the electrically conductive medium is the liquid-phase electrically conductive system, the carbon material is obtained in the liquid-phase electrically conductive system; and under the condition that the electrically conductive medium is the solid substrate, the carbon material is obtained on a surface of the solid substrate.