Provided is a technique that allows ensuring a downsized plating apparatus.

A plating apparatus includes a discharge module 50. The discharge module includes a module main body 51 including a plurality of nozzles 52 configured to discharge a process liquid upward, and a moving mechanism 60 including a rotation shaft 61 disposed at a side of a plating tank and connected to the module main body. The moving mechanism 60 moves the module main body by rotation of the rotation shaft. The moving mechanism moves the module main body between the first position and the second position. The plurality of nozzles are arranged such that the process liquid discharged from the plurality of nozzles is brought in contact with a lower surface of a substrate from a center portion to an outer peripheral edge portion when the module main body moves to the second position. The module main body further includes a recovery member configured to recover the process liquid dropped after being discharged from the plurality of nozzles and brought in contact with the lower surface of the substrate.

Provided are a measurement method, an electrochemical measuring cell, and a measuring device which are capable of directly and continuously measuring the concentration of monovalent copper ions (Cu.sup.+), 3-mercaptopropyl sulfonate (MPS), or Cu.sup.+-MPS, which is a plating additive breakdown product, in a plating solution during a copper plating process.

Provided are a measurement method, an electrochemical measuring cell, and a measuring device which are capable of directly and continuously measuring the concentration of monovalent copper ions (Cu.sup.+), 3-mercaptopropyl sulfonate (MPS), or Cu.sup.+-MPS, which is a plating additive breakdown product, in a plating solution during a copper plating process.

A surface processing method for a SiC substrate includes the following processes or steps: anodizing a workpiece surface of the SiC substrate by passing a current having a current density of 15 mA/cm.sup.2 or more through the SiC substrate as an anode in the presence of an electrolyte; disposing a grinding wheel layer of a surface processing pad to the workpiece surface and selectively removing, with the grinding wheel layer, an oxide formed on the workpiece surface through anodization; and performing, simultaneously or sequentially, the anodization of the workpiece surface and the selective removal of the oxide formed on the workpiece surface with the grinding wheel layer.

A surface processing method for a SiC substrate includes the following processes or steps: anodizing a workpiece surface of the SiC substrate by passing a current having a current density of 15 mA/cm.sup.2 or more through the SiC substrate as an anode in the presence of an electrolyte; disposing a grinding wheel layer of a surface processing pad to the workpiece surface and selectively removing, with the grinding wheel layer, an oxide formed on the workpiece surface through anodization; and performing, simultaneously or sequentially, the anodization of the workpiece surface and the selective removal of the oxide formed on the workpiece surface with the grinding wheel layer.

A method for investigating an electrolyte solution for processing a component, particularly a component or a component material of an aircraft engine, by near infrared spectroscopy.

Provided is a method for forming a metal film capable of forming a homogeneous metal film having a uniform film thickness by stably ensuring a fluid pressure of an electrolytic solution during film formation. The method places a substrate on a mount base. While sucking a gas between the substrate and a porous film through which the electrolytic solution can pass from a suction port of a suction passage formed on the mount base, the method brings the porous film into contact with the surface of the substrate. The method interrupts the suction passage while the porous film contacts the surface of the substrate. While interrupting the suction passage, the method allows the electrolytic solution to pass through the porous film while pressing the porous film against the surface of the substrate with a fluid pressure of the electrolytic solution and deposits metal from metal ions in the passed electrolytic solution on the surface of the substrate, thereby forming the metal film.

Provided is a method for forming a metal film capable of forming a homogeneous metal film having a uniform film thickness by stably ensuring a fluid pressure of an electrolytic solution during film formation. The method places a substrate on a mount base. While sucking a gas between the substrate and a porous film through which the electrolytic solution can pass from a suction port of a suction passage formed on the mount base, the method brings the porous film into contact with the surface of the substrate. The method interrupts the suction passage while the porous film contacts the surface of the substrate. While interrupting the suction passage, the method allows the electrolytic solution to pass through the porous film while pressing the porous film against the surface of the substrate with a fluid pressure of the electrolytic solution and deposits metal from metal ions in the passed electrolytic solution on the surface of the substrate, thereby forming the metal film.

An apparatus and method for electrochemically depositing a unitary layer structure using a reactor configured to contain an electrolyte solution with an anode array containing a plurality of independently electrically controllable anodes arranged in a two-dimensional array, a cathode, an addressing circuit for receiving a signal containing anode address data and for outputting a signal causing an anode array pattern; and, a controller, in communication with the addressing circuit and the anode array, configured to electrically control each anode in the anode array to cause an electrochemical reaction at the cathode that deposits a unitary layer structure according to the anode array pattern signal.

An apparatus and method for electrochemically depositing a unitary layer structure using a reactor configured to contain an electrolyte solution with an anode array containing a plurality of independently electrically controllable anodes arranged in a two-dimensional array, a cathode, an addressing circuit for receiving a signal containing anode address data and for outputting a signal causing an anode array pattern; and, a controller, in communication with the addressing circuit and the anode array, configured to electrically control each anode in the anode array to cause an electrochemical reaction at the cathode that deposits a unitary layer structure according to the anode array pattern signal.