A method for heat-treating a silicon single crystal wafer to control a BMD density thereof to achieve a predetermined BMD density by performing an RTA heat treatment on a silicon single crystal wafer composed of an Nv region in a nitriding atmosphere, and then performing a second heat treatment, the method including: formulating a relational equation for a relation between BMD density and RTA temperature in advance; and determining an RTA temperature for achieving the predetermined BMD density according to the relational equation. Consequently, a method for heat-treating a silicon single crystal wafer for manufacturing an annealed wafer or an epitaxial wafer each having defect-free surface and a predetermined BMD density in a bulk portion thereof.

A method for heat-treating a silicon single crystal wafer to control a BMD density thereof to achieve a predetermined BMD density by performing an RTA heat treatment on a silicon single crystal wafer composed of an Nv region in a nitriding atmosphere, and then performing a second heat treatment, the method including: formulating a relational equation for a relation between BMD density and RTA temperature in advance; and determining an RTA temperature for achieving the predetermined BMD density according to the relational equation. Consequently, a method for heat-treating a silicon single crystal wafer for manufacturing an annealed wafer or an epitaxial wafer each having defect-free surface and a predetermined BMD density in a bulk portion thereof.

An electrochemical cell includes a working electrode in contact with an aqueous electrolyte solution, a counter electrode in contact with the aqueous electrolyte solution, and a reference electrode in contact with the aqueous electrolyte solution. The working electrode comprises a plasma modified epitaxial synthesized graphene surface fabricated on SiC.

An electrochemical cell includes a working electrode in contact with an aqueous electrolyte solution, a counter electrode in contact with the aqueous electrolyte solution, and a reference electrode in contact with the aqueous electrolyte solution. The working electrode comprises a plasma modified epitaxial synthesized graphene surface fabricated on SiC.

This disclosure relates to methods of growing crystalline layers on amorphous substrates by way of an ultra-thin seed layer, methods for preparing the seed layer, and compositions comprising both. In an aspect of the invention, the crystalline layers can be thin films. In a preferred embodiment, these thin films can be free-standing.

A core for use in casting an internal cooling circuit within a gas turbine engine component includes a base core portion and an additive core portion additively manufactured to the base core portion. A method of manufacturing a core for use in casting an internal cooling circuit within a gas turbine engine component including additively manufacturing an additive core portion to a base core portion.

A core for use in casting an internal cooling circuit within a gas turbine engine component includes a base core portion and an additive core portion additively manufactured to the base core portion. A method of manufacturing a core for use in casting an internal cooling circuit within a gas turbine engine component including additively manufacturing an additive core portion to a base core portion.

The present invention relates to: layered iron arsenide (FeAs), which is more particularly layered FeAs, which, unlike the conventional bulk FeAs, has a two-dimensional (2D) crystal structure, has the ability to be easily exfoliated into nanosheets, and has superconductivity; a method of preparing the same; and a FeAs nanosheet exfoliated from the same.

By widening a terrace on a crystal surface on a bottom face of a recess by step flow caused by heating, a flat face is formed on the bottom face of the recess, a two-dimensional material layer made of a two-dimensional material is formed on the formed flat face, and then a device made of the two-dimensional material layer is produced.

A method for crystallizing an amorphous multicomponent ionic compound comprises applying an external stimulus to a layer of an amorphous multicomponent ionic compound, the layer in contact with an amorphous surface of a deposition substrate at a first interface and optionally, the layer in contact with a crystalline surface at a second interface, wherein the external stimulus induces an amorphous-to-crystalline phase transformation, thereby crystallizing the layer to provide a crystalline multicomponent ionic compound, wherein the external stimulus and the crystallization are carried out at a temperature below the melting temperature of the amorphous multicomponent ionic compound. If the layer is in contact with the crystalline surface at the second interface, the temperature is further selected to achieve crystallization from the crystalline surface via solid phase epitaxial (SPE) growth without nucleation.