Patent classifications
C30B1/12
PIEZOELECTRIC SINGLE CRYSTAL, FABRICATION METHOD THEREFOR, AND PIEZOELECTRIC AND DIELECTRIC APPLICATION PARTS USING SAME
Provided is a piezoelectric single crystal, a method of manufacturing the piezoelectric single crystal, and piezoelectric and dielectric application components using the piezoelectric single crystal. The piezoelectric single crystal shows that characteristics of the piezoelectric single crystal are maximized through the control of composition concerning ions located at [A] from a perovskite type crystal structure ([A][B]O.sub.3), the single crystal of uniform composition can be provided without a composition gradient even in case of complex, chemical composition thanks to a solid phase single crystal growth method, and in particular, the piezoelectric single crystal is provided in a form which causes large resistance to a mechanical impact, and facilitates mechanical processing, so the piezoelectric single crystal can usefully be applied to the piezoelectric application component and the dielectric application component, like ultrasonic transducers, piezoelectric actuators, piezoelectric sensor, dielectric capacitors, using the piezoelectric single crystal pertain.
QUASI-SINGLE-CRYSTAL FILM AND MANUFACTURING METHOD THEREOF
A quasi-single-crystal film and its manufacturing method thereof are provided, in which a metal film having a preferred orientation of <111> on its surface is subjected to a mechanical stretching force, such that the crystal grains thereof are able to form in a much more orderly arrangement, and a quasi-single-crystal film having preferred orientations on three axes can be obtained. The proposed quasi-single-crystal film has preferred orientations of <211> and <110> on its stretching direction and a direction that is perpendicular to the stretching direction, respectively, and retains a preferred orientation of <111> on its surface. By employing the present invention, it is advantageous of manufacturing large-area quasi single crystal films having high anisotropy as well as growing two dimensional materials or developing of other anisotropic feature structures.
METHOD OF MANUFACTURING ORIENTED STEEL PLATE
Provided is a method of manufacturing an oriented steel plate having two or more regions in each of which a crystal orientation is arranged in a specific direction. In the method, at least two single crystal steels are brought into contact with a principal surface of a polycrystalline steel plate so that crystal orientations of the single crystal steels and are arranged in different directions, and heat treatment of the single crystal steels and the polycrystalline steel plate is performed. This causes crystal growth following the crystal orientations of the single crystal steels to occur in the polycrystalline steel plate. Then, two or more single crystal steels having different crystal orientations are formed in the polycrystalline steel plate.
METHOD OF MANUFACTURING ORIENTED STEEL PLATE
Provided is a method of manufacturing an oriented steel plate having two or more regions in each of which a crystal orientation is arranged in a specific direction. In the method, at least two single crystal steels are brought into contact with a principal surface of a polycrystalline steel plate so that crystal orientations of the single crystal steels and are arranged in different directions, and heat treatment of the single crystal steels and the polycrystalline steel plate is performed. This causes crystal growth following the crystal orientations of the single crystal steels to occur in the polycrystalline steel plate. Then, two or more single crystal steels having different crystal orientations are formed in the polycrystalline steel plate.
Method for producing oriented sintered body
A method for producing an oriented sintered body according to the present invention includes the steps of: (a) preparing a multilayer body, the multilayer body including a layer including a fine raw-material powder and a layer including a plate-like raw-material powder which are alternately stacked each other, particles of the plate-like raw-material powder being arranged such that surfaces of the particles of the plate-like raw-material powder extend along a surface of the layer including a fine raw-material powder; and (b) sintering the multilayer body.
Method for producing oriented sintered body
A method for producing an oriented sintered body according to the present invention includes the steps of: (a) preparing a multilayer body, the multilayer body including a layer including a fine raw-material powder and a layer including a plate-like raw-material powder which are alternately stacked each other, particles of the plate-like raw-material powder being arranged such that surfaces of the particles of the plate-like raw-material powder extend along a surface of the layer including a fine raw-material powder; and (b) sintering the multilayer body.
INSERT FOR HOT ISOSTATIC PRESSING TREATMENT
An insert fixture has a base, a plurality of mounting brackets, and a plurality of separators. The plurality of separators extends vertically from the base and includes a plurality of grid portions extending the length of the insert fixture and a plurality of divider portions, which connect to the plurality of grid portions to form a plurality of individual component holders around one of the plurality of mounting brackets. Each individual component holder has two separated grid portion sections positioned on either side of the bracket. These grid portions have two divider portions which are also separated and positioned either side of the bracket at an angle relative to the two grid portions. The individual component holder forms a cell around the mounting bracket. The insert fixture may be constructed from a molybdenum alloy, lanthanum oxide and/or titanium zirconium molybdenum.
DEVICE FOR PRODUCING HIGH PRESSURES IN SOLID MEDIA
A device (1) for generating high pressures in solid and liquid media is described. The device (1) includes a lower shell-shaped body half (2) and an upper shell-shaped body half (3). The device (1) further includes a lower elastic membrane (6) and an upper elastic membrane (7), which are each inserted into the lower body half (2) and into the upper body half (3), respectively. The respective body half (2, 3) and the respective membrane (6, 7) inserted into it each surround a pressure chamber (62, 73). The device (1) furthermore includes an opening and a channel (14) in the lower body half (2), in order to attach an oil line from an oil pump to the device and to pump the oil into the pressure chamber between the lower body half (2) and the elastic membrane (6) inserted into it. The pressure chambers (62, 73) in the lower body half (2) and in the upper body half (3) communicate by means of a line. The device (1) is distinguished in that the line connects the pressure chambers (62, 73) in the lower body half (2) and the upper body half (3) permanently with one another in both the open and the closed state of the device. The device is furthermore distinguished in that it includes a pipeline, which is embodied in the form of a helical spring line (17) and extends outside the lower shell-shaped body half (2) and the upper shell-shaped body half (3).
DEVICE FOR PRODUCING HIGH PRESSURES IN SOLID MEDIA
A device (1) for generating high pressures in solid and liquid media is described. The device (1) includes a lower shell-shaped body half (2) and an upper shell-shaped body half (3). The device (1) further includes a lower elastic membrane (6) and an upper elastic membrane (7), which are each inserted into the lower body half (2) and into the upper body half (3), respectively. The respective body half (2, 3) and the respective membrane (6, 7) inserted into it each surround a pressure chamber (62, 73). The device (1) furthermore includes an opening and a channel (14) in the lower body half (2), in order to attach an oil line from an oil pump to the device and to pump the oil into the pressure chamber between the lower body half (2) and the elastic membrane (6) inserted into it. The pressure chambers (62, 73) in the lower body half (2) and in the upper body half (3) communicate by means of a line. The device (1) is distinguished in that the line connects the pressure chambers (62, 73) in the lower body half (2) and the upper body half (3) permanently with one another in both the open and the closed state of the device. The device is furthermore distinguished in that it includes a pipeline, which is embodied in the form of a helical spring line (17) and extends outside the lower shell-shaped body half (2) and the upper shell-shaped body half (3).
BELOW MELTING TEMPERATURE FORMATION OF HIGH-DENSITY POLYCRYSTALLINE SILICON
A method is described for the atmospheric pressure sintering of silicon to form high density polycrystalline silicon preforms that optionally may be annealed at higher temperatures to form wafers suitable for use in solar cells. The preforms are formed from nanometer scale, high surface area silicon that is sintered to form the near full density polycrystalline silicon preforms. Subsequent annealing of the preforms may be used to grow grains suitable for use as wafers for solar cells. The polycrystalline silicon may be used directly to form semiconductor structures other than wafers suitable for solar cells, such as to form electrodes, electrode surfaces, and thermoelectric devices.