A light-emitting electrode having a ZnO transparent electrode and a method for manufacturing the same are provided. A light-emitting element according to an embodiment comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a ZnO transparent electrode, which is positioned on the second conductive semiconductor layer, which makes an Ohmic contact with the second conductive semiconductor layer, and which comprises monocrystalline ZnO, wherein the diffraction angle of a peak of the ZnO transparent electrode, which results from X-ray diffraction (XRD) omega 2theta (2) scan, is in the range of 1% with regard to the diffraction angle of a peak of the second conductive semiconductor layer, which results from XRD 2 scan, and the FWHM of a main peak of the ZnO transparent electrode, which results from XRD omega () scan, is equal to or less than 900 arcsec.

A method of preparing a core-shell nanorod can include growing a shell of a core-shell nanorod (M1X1)M2X2 in a solution through a slow-injection of M2 precursor solution and X2 precursor solution, wherein the core-shell nanorod includes a M1X1 core.

Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.

Methods for forming samples of noble metal bipyramid nanocrystals having very low size and shape polydispersities from samples of mixed noble metal nanocrystals are provided. The samples include those comprising high purity, substantially monodisperse, plasmonic gold bipyramid nanocrystals. Also provided are methods of growing secondary twinned metal nanocrystals using the noble metal bipyramid nanocrystals as seed particles. Like the seed bipyramid nanocrystals from which they are grown, the secondary nanocrystals are twinned nanocrystals and may also be characterized by very low size and shape polydispersities. Secondary twinned nanocrystals grown by these methods include enlarged metal bipyramid nanocrystals and nanocrystals with anisotropic dumbbell shapes having a variety of tip geometries. Methods for using noble metal bipyramid nanocrystals as plasmonic heaters to heat reaction solutions via plasmonic-photothermal radiation-to-heat conversion are also provided.

A large area nitride crystal, comprising gallium and nitrogen, with a non-polar or semi-polar large-area face, is disclosed, along with a method of manufacture. The crystal is useful as a substrate for a light emitting diode, a laser diode, a transistor, a photodetector, a solar cell, or for photoelectrochemical water splitting for hydrogen generation.

An object of the present invention is to provide a core shell particle having high luminous efficacy and excellent durability; a method of producing the same; and a film obtained by using the core shell particle. The core shell particle of the present invention includes: a core which contains a Group III element and a Group V element; a first shell which covers at least a part of a surface of the core; and a second shell which covers at least a part of the first shell, in which at least a part of a surface of the core shell particle contains a metal-containing organic compound containing a metal element and a hydrocarbon group.

A disc-like GaN substrate is a substrate produced by a tiling method and having an angel between the normal line and m-axis on the main surface of the substrate of 0 to 20 inclusive and a diameter of 45 to 55 mm, to 4 or less. In a preferred embodiment, a disc-like GaN substrate has a first main surface and a second main surface that is opposite to the first main surface, and which has an angle between the normal line and m-axis on the first main surface of 0 to 20 inclusive and a diameter of 45 mm or more. The disc-like GaN substrate comprises at least four crystalline regions each being exposed to both of the first main surface and the second main surface, wherein the four crystalline regions are arranged in line along the direction of the orthogonal projection of c-axis on the first main surface.

A biaxially oriented SiC composite substrate includes a first biaxially oriented SiC layer that contains a threading screw dislocation and a basal plane dislocation, and a second biaxially oriented SiC layer that is formed continuously from the first biaxially oriented SiC layer and that contains 110.sup.16 atoms/cm.sup.3 or more and 110.sup.19 atoms/cm.sup.3 or less of a rare earth element. The defect density of a surface of the second biaxially oriented SiC layer is smaller than the defect density of the first biaxially oriented SiC layer.

Quantum dots and methods of making quantum dots are provided.

Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially- single- particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.