A method of forming a one-dimensional nanoarray of In.sub.2O.sub.3 nanowires on indium foil is disclosed. The nanowires of In.sub.2O.sub.3 have diameters of 30 nm-50 nm and lengths of 100 nm-200 nm, and are attached to and substantially perpendicular to the surface of the indium foil. The In.sub.2O.sub.3 nanoarray may have a nanowire density of 200-300 nanowires per m.sup.2 indium foil and a band gap energy of 2.63-3.63 eV. The In.sub.2O.sub.3 nanoarray may be formed by anodization of indium foil in an electrochemical cell subjected to a voltage of 15-25 V at room temperature.

A method of forming a one-dimensional nanoarray of In.sub.2O.sub.3 nanowires on indium foil is disclosed. The nanowires of In.sub.2O.sub.3 have diameters of 30 nm-50 nm and lengths of 100 nm-200 nm, and are attached to and substantially perpendicular to the surface of the indium foil. The In.sub.2O.sub.3 nanoarray may have a nanowire density of 200-300 nanowires per m.sup.2 indium foil and a band gap energy of 2.63-3.63 eV. The In.sub.2O.sub.3 nanoarray may be formed by anodization of indium foil in an electrochemical cell subjected to a voltage of 15-25 V at room temperature.

The invention provides a novel microfluidic platform for use in electro-crystallization and electro-crystallography experiments. The manufacturing and use of graphene as X-ray compatible electrodes allows the application of electric fields on-chip, during X-ray analysis. The presence of such electric fields can be used to modulate the structure of protein (or other) molecules in crystalline (for X-ray diffraction) or solution form (for X-ray scattering). Additionally, the presence of an electric field can be used to extend the lifetime of fragile samples by expediting the removal of reactive secondary radiation damage species.

A method of forming a one-dimensional nanoarray of In.sub.2O.sub.3 nanowires on indium foil is disclosed. The nanowires of In.sub.2O.sub.3 have diameters of 30 nm-50 nm and lengths of 100 nm-200 nm, and are attached to and substantially perpendicular to the surface of the indium foil. The In.sub.2O.sub.3 nanoarray may have a nanowire density of 200-300 nanowires per m.sup.2 indium foil and a band gap energy of 2.63-3.63 eV. The In.sub.2O.sub.3 nanoarray may be formed by anodization of indium foil in an electrochemical cell subjected to a voltage of 15-25 V at room temperature.

A method of forming a one-dimensional nanoarray of In.sub.2O.sub.3 nanowires on indium foil is disclosed. The nanowires of In.sub.2O.sub.3 have diameters of 30 nm-50 nm and lengths of 100 nm-200 nm, and are attached to and substantially perpendicular to the surface of the indium foil. The In.sub.2O.sub.3 nanoarray may have a nanowire density of 200-300 nanowires per m.sup.2 indium foil and a band gap energy of 2.63-3.63 eV. The In.sub.2O.sub.3 nanoarray may be formed by anodization of indium foil in an electrochemical cell subjected to a voltage of 15-25 V at room temperature.

The compound according to the invention is a compound of formula (1) A.sub.x W.sub.1-yMO.sub.yO.sub.3, wherein A is chosen from the group comprising the Li, Na, NH.sub.4, K and H cations, and it is characterized in that x and y verify the relationships 0x1 and 0y0.5, and in that it has a crystalline structure of the hexagonal type with a base of WO.sub.6 octahedra, said structure having tunnels delimited by 6, 4 and 3 of said octahedra and oriented along the axis c.

The compound according to the invention is a compound of formula (1) A.sub.x W.sub.1-yMO.sub.yO.sub.3, wherein A is chosen from the group comprising the Li, Na, NH.sub.4, K and H cations, and it is characterized in that x and y verify the relationships 0x1 and 0y0.5, and in that it has a crystalline structure of the hexagonal type with a base of WO.sub.6 octahedra, said structure having tunnels delimited by 6, 4 and 3 of said octahedra and oriented along the axis c.

A method of forming a one-dimensional nanoarray of In.sub.2O.sub.3 nanowires on indium foil is disclosed. The nanowires of In.sub.2O.sub.3 have diameters of 30 nm-50 nm and lengths of 100 nm-200 nm, and are attached to and substantially perpendicular to the surface of the indium foil. The In.sub.2O.sub.3 nanoarray may have a nanowire density of 200-300 nanowires per m.sup.2 indium foil and a band gap energy of 2.63-3.63 eV. The In.sub.2O.sub.3 nanoarray may be formed by anodization of indium foil in an electrochemical cell subjected to a voltage of 15-25 V at room temperature.

A method of forming a one-dimensional nanoarray of In.sub.2O.sub.3 nanowires on indium foil is disclosed. The nanowires of In.sub.2O.sub.3 have diameters of 30 nm-50 nm and lengths of 100 nm-200 nm, and are attached to and substantially perpendicular to the surface of the indium foil. The In.sub.2O.sub.3 nanoarray may have a nanowire density of 200-300 nanowires per m.sup.2 indium foil and a band gap energy of 2.63-3.63 eV. The In.sub.2O.sub.3 nanoarray may be formed by anodization of indium foil in an electrochemical cell subjected to a voltage of 15-25 V at room temperature.

A fabrication method of a nickel nanowire includes: preparing an anodized aluminum oxide or plastic nanotemplate having nanopores and one surface on which platinum (Pt), palladium (Pd), gold (Au), silver (Ag), copper (Cu) or an alloy thereof is deposited as a working electrode; producing a plating solution which is a mixture of nickel(II) sulfate heptahydrate (NiSO.sub.4.7H.sub.2O) as a precursor and ammonium sulfate ((NH.sub.4).sub.2SO.sub.4) as a buffer solution; and dipping the anodized aluminum oxide or plastic nanotemplate into the plating solution and depositing a nickel nanowire in an electrodeposition process using platinum (Pt) or iridium (Ir) as a counter electrode. A crystal direction of the nickel nanowire is a [111] direction.