An organic thin film includes an organic crystalline phase, where the organic crystalline phase defines a surface having a surface roughness (R.sub.a) of less than approximately 10 micrometers over an area of at least approximately 1 cm.sup.2. The organic thin film may be manufactured from an organic precursor and a non-volatile medium material that is configured to mediate the surface roughness of the organic crystalline phase during crystal nucleation and growth. The thin film may be formed using a suitably shaped mold, for example, and the non-volatile medium material may be disposed between a layer of the organic precursor and the mold during processing.

A method of forming an organic solid crystal (OSC) thin film includes forming a layer of a non-volatile medium material over a surface of a mold, forming a layer of a molecular feedstock over a surface of the non-volatile medium material, the molecular feedstock including an organic solid crystal precursor, forming crystal nuclei from the organic solid crystal precursor, and growing the crystal nuclei to form the organic solid crystal thin film. An organic solid crystal (OSC) thin film may include a biaxially-oriented organic solid crystal layer having mutually orthogonal refractive indices, n.sub.1≠n.sub.2≠n.sub.3.

Embodiments described are directed to methods for the functionalization of asphaltene materials and to compositions made from functionalized asphaltenes. Disclosed is a method for synthesizing graphene derivatives, such as 2D single crystalline carbon allotropes of graphene and functional materials, such as sulfonic acid and its derivatives. Also disclosed is a method for the transformation of asphaltene into a source of graphene derivatives and functional materials, such as, 0D, 1D, 2D and combinations of 0D and 1D by utilizing chemical substitution reaction mechanism, such as, electrophilic aromatic substitution, nucleophilic aromatic substitution and Sandmeyer mechanism. Also disclosed are novel graphene materials comprising: acetylenic linkage and hydrogenated graphene. These novel materials, which may be produced by these methods, include, e.g.: 2D single crystalline carbon allotropes of graphene with asymmetric unit formulas C.sub.7H.sub.6N.sub.2O.sub.4, C.sub.6H.sub.4N.sub.2O.sub.4, C.sub.7H.sub.7O.sub.3S− H.sub.3O+, C.sub.7H.sub.7O.sub.3SH+, and a 2D single crystal with asymmetric unit formula (Na.sub.6O.sub.16S.sub.4)n.

Embodiments described are directed to methods for the functionalization of asphaltene materials and to compositions made from functionalized asphaltenes. Disclosed is a method for synthesizing graphene derivatives, such as 2D single crystalline carbon allotropes of graphene and functional materials, such as sulfonic acid and its derivatives. Also disclosed is a method for the transformation of asphaltene into a source of graphene derivatives and functional materials, such as, 0D, 1D, 2D and combinations of 0D and 1D by utilizing chemical substitution reaction mechanism, such as, electrophilic aromatic substitution, nucleophilic aromatic substitution and Sandmeyer mechanism. Also disclosed are novel graphene materials comprising: acetylenic linkage and hydrogenated graphene. These novel materials, which may be produced by these methods, include, e.g.: 2D single crystalline carbon allotropes of graphene with asymmetric unit formulas C.sub.7H.sub.6N.sub.2O.sub.4, C.sub.6H.sub.4N.sub.2O.sub.4, C.sub.7H.sub.7O.sub.3S− H.sub.3O+, C.sub.7H.sub.7O.sub.3SH+, and a 2D single crystal with asymmetric unit formula (Na.sub.6O.sub.16S.sub.4)n.

Proposed are a layered Group III-V compound containing phosphorus, a Group III-V nanosheet that may be prepared using the same, and an electrical device including the materials. There is proposed a layered compound represented by [Formula 1] M.sub.x-mA.sub.yP.sub.z (Where M is at least one of Group II elements, A is at least one of Group III elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0<m<x).

A method of producing an ultraviolet protective agent composition, which has high transparency and excellent protection ability against a light of ultraviolet region of wavelengths of 200 to 420 nm, and an ultraviolet protective agent composition obtained by the production method are provided. The method of producing an ultraviolet protective agent composition includes at least step (a) of precipitating iron oxide microparticles by mixing with a microreactor an iron oxide raw material fluid containing at least Fe.sup.3+ ion, and an iron oxide precipitation fluid containing at least a basic substance; and step (b) of dispersing the above precipitated iron oxide microparticles in a dispersion medium to obtain iron oxide microparticle dispersion, wherein a haze value of the iron oxide microparticle dispersion is 2.0% or less, and a transmittance of the iron oxide microparticle dispersion for the light of the wavelengths of 200 to 420 nm is 2.0% or less.

A method of producing an ultraviolet protective agent composition, which has high transparency and excellent protection ability against a light of ultraviolet region of wavelengths of 200 to 420 nm, and an ultraviolet protective agent composition obtained by the production method are provided. The method of producing an ultraviolet protective agent composition includes at least step (a) of precipitating iron oxide microparticles by mixing with a microreactor an iron oxide raw material fluid containing at least Fe.sup.3+ ion, and an iron oxide precipitation fluid containing at least a basic substance; and step (b) of dispersing the above precipitated iron oxide microparticles in a dispersion medium to obtain iron oxide microparticle dispersion, wherein a haze value of the iron oxide microparticle dispersion is 2.0% or less, and a transmittance of the iron oxide microparticle dispersion for the light of the wavelengths of 200 to 420 nm is 2.0% or less.

A perovskite material that has a perovskite crystal lattice having a formula of C.sub.xM.sub.yX.sub.z, where x, y, and z, are real numbers, and 1,4-diammonium butane cation cations disposed within or at a surface of the perovskite crystal lattice. C comprises one or more cations selected from the group consisting of Group 1 metals, Group 2 metals, ammonium, formamidinium, guanidinium, and ethene tetramine. M comprises one or more metals each selected from the group consisting of Be, Mg, Ca, Sr, Ba, Fe, Cd, Co, Ni, Cu, Ag, Au, Hg, Sn, Ge, Ga, Pb, In, Tl, Sb, Bi, Ti, Zn, Cd, Hg, and Zr and combinations thereof. X comprises one or more anions each selected from the group consisting of halides, sulfides, selenides, and combinations thereof.

A solid ion conductive material can include a complex metal halide. The complex metal halide can include at least one alkali metal element. In an embodiment, the solid ion conductive material including the complex metal halide can be a single crystal. In another embodiment, the ion conductive material including the complex metal halide can be a crystalline material having a particular crystallographic orientation. A solid electrolyte can include the ion conductive material including the complex metal halide.

A perovskite material that has a perovskite crystal lattice having a formula of C.sub.xM.sub.yX.sub.z, and alkyl polyammonium cations disposed within or at a surface of the perovskite crystal lattice; wherein x, y, and z, are real numbers; C comprises one or more cations selected from the group consisting of Group 1 metals, Group 2 metals, ammonium, formamidinium, guanidinium, and ethene tetramine; M comprises one or more metals each selected from the group consisting of Be, Mg, Ca, Sr, Ba, Fe, Cd, Co, Ni, Cu, Ag, Au, Hg, Sn, Ge, Ga, Pb, In, Tl, Sb, Bi, Ti, Zn, Cd, Hg, and Zr, and combinations thereof and X comprises one or more anions each selected from the group consisting of halides, pseudohalides, chalcogenides, and combinations thereof.